SPD50N03S2L_08

SPD50N03S2L-06 G OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 30 6.4 50 PG- TO252 -3 V mΩ A • Enhancement mode • Logic Level • High Current Rating • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-free lead plating; RoHS compliant Package SPD50N03S2L-06 G PG- TO252 -3 Type Marking PN03L06 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1) TC=25°C Symbol ID Value 50 50 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 200 250 13 6 ±20 136 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=50 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=50A, VDS=24V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 02-09-2008 SPD50N03S2L-06 G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.7 max. 1.1 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = V DS ID = 85 µA Zero gate voltage drain current V DS=30V, VGS=0V, Tj=25°C V DS=30V, VGS=0V, Tj=125°C µA 0.01 10 1 6.8 4.7 1 100 100 9.2 6.4 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=50A Drain-source on-state resistance V GS=10V, I D=50A 1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 113A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 02-09-2008 SPD50N03S2L-06 G Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =24V, ID =50A, VGS =0 to 10V VDD =24V, ID =50A Symbol Conditions min. Values typ. 72 1900 740 180 8 19 35 24 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =50A VGS =0V, VDS =25V, f=1MHz 36 - S 2530 pF 990 270 12 29 53 36 ns VDD =15V, VGS =10V, ID =50A, RG =3.6Ω - 6 17.8 52 3.2 8 26.7 68 - nC V(plateau) VDD =24V, ID =50A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr V GS=0V, IF=50A V R=15V, I F=lS, diF/dt=100A/µs IS TC=25°C - 0.9 41 46 50 200 1.3 51 58 A V ns nC Page 3 02-09-2008 SPD50N03S2L-06 G 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 4 V SPD50N03S2L-06 2 Drain current ID = f (T C) parameter: VGS≥ 10 V 55 SPD50N03S2L-06 150 W A 45 40 120 110 P tot 100 90 80 70 60 ID 100 120 140 160 °C 190 35 30 25 20 50 40 30 20 10 0 0 20 40 60 80 5 0 0 20 40 60 80 15 10 100 120 140 160 °C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPD50N03S2L-06 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPD50N03S2L-06 K/W A /I D t = 7.6µs p 10 µs 10 0 V DS 10 DS (on ) ID = 2 Z thJC 100 µs R 10 -1 D = 0.50 10 10 1 1 ms -2 0.20 0.10 0.05 10 -3 single pulse 0.02 0.01 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 02-09-2008 SPD50N03S2L-06 G 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs 120 SPD50N03S2L-06 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS=10V 21 SPD50N03S2L-06 Ptot = 136W i h V [V] GS a b A 100 90 80 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.5 10.0 Ω 18 16 14 12 10 8 d e f g c d e 70 60 50 40 30 20 10 g f g fh i e R DS(on) ID h 6 d i 4 c b a 2 0 5 0 VGS [V] = d 3.2 e 3.4 f 3.6 g 3.8 h i 4.5 10.0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 10 20 30 40 50 60 70 A 85 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 60 8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs 90 A 50 S 70 45 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 10 0 0 20 40 60 80 100 40 30 20 60 50 V 4 VGS g fs ID A 130 ID Page 5 02-09-2008 SPD50N03S2L-06 G 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 50 A, VGS = 10 V SPD50N03S2L-06 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 2.5 Ω 15 V 12 R DS(on) 11 10 9 8 7 6 5 4 3 2 1 0 -60 -20 20 60 100 140 °C 200 typ 98% V GS(th) 0.415 mA 1.5 83 µA 1 0.5 0 -60 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 µs 10 3 SPD50N03S2L-06 A pF Ciss 10 2 10 3 Coss IF 10 1 C T j = 25 °C typ Crss T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 2 10 5 10 15 20 0 0 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 V DS VSD Page 6 02-09-2008 SPD50N03S2L-06 G 13 Typ. avalanche energy E AS = f (T j) par.: I D = 50 A , V DD = 25 V, R GS = 25 Ω 260 14 Typ. gate charge VGS = f (QGate) parameter: ID = 50 A pulsed 16 SPD50N03S2L-06 mJ V 220 200 12 E AS VGS 180 160 140 10 0,2 VDS max 0,8 VDS max 8 120 100 80 60 40 20 0 25 45 65 85 105 125 145 4 6 2 °C 185 Tj 0 0 10 20 30 40 50 60 nC 80 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPD50N03S2L-06 V V(BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 02-09-2008 SPD50N03S2L-06 G Package outline: PG-TO252-3 Page 8 02-09-2008 SPD50N03S2L-06 G Page 9 02-09-2008