SPI11N60CFD

SPI11N60CFD Cool MOS™ P ower Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme d v/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge PG-TO262 VDS @ Tjmax RDS(on) ID 650 0.44 11 V Ω A Type SPI11N60CFD Package PG-TO262 Pb-free Yes Marking 11N60CFD Maximum Ratings Parameter Continuous drain current T C = 25 °C T C = 100 °C Pulsed drain current, t p limited by T jmax Avalanche energy, single pulse ID = 5.5 A, V DD = 50 V Avalanche energy, repetitive t AR limited by T jmax 1) EAR ID = 11 A, V DD = 50 V Avalanche current, repetitive t AR limited by T jmax Reverse diode d v/dt IS=11A, V DS=480V, T j=125°C Symbol ID Value 11 7 28 340 0.6 11 40 ±20 ±30 125 -55... +150 Unit A ID puls EAS mJ IAR dv/dt VGS VGS Ptot Tj , Tstg A V/ns V W °C 2009-04-24 Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C Operating and storage temperature Rev. 2.6 Page 1 SPI11N60CFD Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 11 A, Tj = 125 °C Symbol dv/dt di F/dt Value 80 600 Unit V/ns A/µs Maximum diode commutation speed V DS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Drain-source breakdown voltage Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current V GS(th) IDSS ID=500µΑ, V GS=V DS V DS=600V, V GS=0V, Tj=25°C, Tj=150°C Symbol min. RthJC RthJA T sold - Values typ. max. 1 62 260 Unit K/W °C Symbol Conditions min. 600 3 - Values typ. 700 4 1.1 900 0.38 1.02 0.86 max. 5 Unit V V (BR)DSS V GS=0V, I D=0.25mA V (BR)DS V GS=0V, I D=11A µA 100 0.44 nA Ω Gate-source leakage current Drain-source on-state resistance IGSS RDS(on) V GS=20V, V DS=0V V GS=10V, I D=7A, Tj=25°C Tj=150°C Gate input resistance RG f=1MHz, open Drain Rev. 2.6 Page 2 2009-04-24 SPI11N60CFD Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance,2) energy related Effective output capacitance,3) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V DD=480V, I D=11A, V GS=0 to 10V V DD=480V, I D=11A Symbol g fs Ciss Coss Crss Co(er) Co(tr) td(on) tr td(off) tf Conditions min. V DS≥2*I D*RDS(on)max, ID=7A V GS=0V, VDS=25V, f=1MHz Values typ. 8.3 1200 390 30 45 85 34 18 43 7 max. - Unit S pF V GS=0V, V DS=0V to 480V pF V DD=380V, V GS=0/10V, ID=11A, RG=6.8Ω - ns - 9 23 48 7 64 - nC V(plateau) V DD=480V, I D=11A V 1Repetitve avalanche causes additional power losses that can be calculated as P AV=EA R*f. 2Co(er) is a fixed capacitance that gives the same stored energy as Coss while V DS is rising from 0 to 80% VDSS. 3Co(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% VDSS. Rev. 2.6 Page 3 2009-04-24 SPI11N60CFD Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current V SD trr Qrr Irrm di rr/dt V GS=0V, IF=I S V R=480V, IF=IS , diF/dt=100A/µs Symbol IS ISM Conditions min. TC=25°C Values typ. 1 140 0.7 11 1200 max. 11 28 1.2 - Unit A V ns µC A A/µs Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.015 0.03 0.056 0.197 0.216 0.083 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.0001878 0.0007106 0.000988 0.002791 0.007285 0.063 Ws/K Unit Symbol Value typ. Unit Tj P tot (t) R th1 R th,n T case External Heatsink C th1 C th2 C th,n T amb Rev. 2.6 Page 4 2009-04-24 SPI11N60CFD 1 Power dissipation Ptot = f (TC) SPP11N60CFD 2 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 2 140 W 120 110 100 A 10 1 P tot 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 10 -2 ID 10 0 90 10 -1 tp=0.001 ms tp=0.01 ms tp=0.1 ms tp=1 ms DC 0 °C 160 10 10 1 10 2 TC V 10 VDS 3 3 Transient thermal impedance ZthJC = f (tp) parameter: D = t p/T 10 1 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 40 K/W A 10 0 10 -1 Vgs = 20V Vgs = 10V Vgs = 9V Vgs = 8.5V Vgs = 8V 30 Vgs = 7.5V Vgs = 7V Vgs = 6.5V 25 Vgs = 6V 20 ZthJC 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse ID -7 -6 -5 -4 -3 15 10 5 10 -4 10 10 10 10 10 s tp 10 -1 0 0 4 8 12 16 20 V 26 VDS Rev. 2.6 Page 5 2009-04-24 SPI11N60CFD 5 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 22 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 2 R DS(on) Vgs = 20V A Vgs = 8.5V Vgs = 8V 18 Vgs = 7.5V Vgs = 7V 16 Vgs = 6.5V Vgs = 6V Ω 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 Vgs = 6V Vgs = 6.5V Vgs = 7V Vgs = 7.5V Vgs = 8V Vgs = 8.5V Vgs = 20V ID 14 12 10 8 6 1 4 2 0 0 4 8 12 16 20 0.9 0.8 V 26 V DS 0.7 0 4 8 12 16 20 A ID 28 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 7 A, V GS = 10 V Ω 2.6 SPP11N60CFD 8 Typ. transfer characteristics ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 40 A 2.2 2 Tj = 25?C R DS(on) 30 1.8 ID 1.6 1.4 25 Tj = 150?C 20 1.2 1 0.8 0.6 0.4 0.2 0 -60 -20 20 60 100 °C 15 98% typ 10 5 0 180 0 2 4 6 8 10 12 14 16 Tj Rev. 2.6 Page 6 V 20 VGS 2009-04-24 SPI11N60CFD 9 Typ. gate charge VGS = f (QGate) parameter: ID = 11 A pulsed 16 V SPP11N60CFD 10 Forward characteristics of body diode IF = f (V SD) parameter: Tj , tp = 10 µs 10 2 SPP11N60CFD A 0.2 VDS max 0.8 VDS max 12 V GS 10 1 8 6 IF 10 0 10 4 T j = 25 °C typ T j = 150 °C typ T j = 25 °C (98%) T j = 150 °C (98%) 10 0 10 20 30 40 50 nC -1 2 0 70 0 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA IAR = f (tAR) par.: T j ≤ 150 °C 11 12 Avalanche energy EAS = f (T j) par.: ID = 5.5 A, V DD = 50 V 350 A mJ 9 8 250 IAR 7 6 5 4 3 2 Tj(START) =125°C Tj(START) =25°C EAS 200 150 100 50 -2 -1 0 1 2 4 1 0 -3 10 0 20 10 10 10 10 10 µs 10 t AR 40 60 80 100 120 °C 160 Tj Page 7 Rev. 2.6 2009-04-24 SPI11N60CFD 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) SPP11N60CFD 14 Avalanche power losses PAR = f (f ) parameter: EAR=0.6mJ 300 720 V W V (BR)DSS 680 P AR 660 640 200 150 620 600 580 50 560 540 -60 04 10 100 -20 20 60 100 °C 180 10 5 Hz f 10 6 Tj 15 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 16 Typ. Coss stored energy Eoss=f(V DS) 7.5 pF Ciss 10 3 µJ 6 5.5 E oss 10 2 5 4.5 4 C Coss 3.5 3 2.5 10 1 Crss 2 1.5 1 0.5 10 0 0 100 200 300 400 V 0 600 0 100 200 300 400 V 600 V DS VDS Rev. 2.6 Page 8 2009-04-24 SPI11N60CFD 17 Typ. reverse recovery charge Qrr = f(TJ) parameter: ID = 11A 1200 18 Typ. reverse recovery charge Qrr = f(ID) parameter: di/dt = 100 A/µs 1200 1100 1100 1000 Qrr [nC] Qrr [nC] 900 800 700 600 Tj = 125°C 1000 900 Tj = 25°C 800 500 400 700 300 600 25 200 125 1 2 3 4 5 6 7 8 9 50 75 °C Tj A ID 11 19 Typ. reverse recovery charge Qrr = f(di/dt) parameter: ID = 11 A 1600 1500 Tj = 125°C 1400 Qrr [nC] 1300 1200 1100 1000 900 800 700 600 100 Tj = 25°C 200 300 400 500 600 700 A/µs 900 di/dt Rev. 2.6 Page 9 2009-04-24 SPI11N60CFD Definition of diodes switching characteristics Rev. 2.6 Page 10 2009-04-24 SPI11N60CFD PG-TO-262-3-1 Rev. 2.6 Page 11 2009-04-24 SPI11N60CFD Rev. 2.6 Page 12 2009-04-24