SPN02N60C3

SPN02N60C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Ultra low effective capacitances • Extreme dv /dt rated Product Summary V DS @ T j,max R DS(on),max ID 650 2.5 0.4 V Ω A SOT223 Type SPN02N60C3 Package SOT223 Ordering Code Q67040-S4553 Marking 02N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1) Drain source voltage slope Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V GS Power dissipation Operating and storage temperature P tot T j, T stg I D=1.8 A, V DS=480 V, T j=125 °C static AC (f >1 Hz) T A=25 °C T A=25 °C I D=0.9 A, V DD=50 V I D=1.8 A, V DD=50 V Value 0.4 0.3 5.4 50 0.07 1.8 50 ±20 ±30 1.8 -55 ... 150 W °C A V/ns V mJ Unit A Rev. 2.3 page 1 2005-02-21 SPN02N60C3 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction soldering point R thJS SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area2) T sold 1.6 mm (0.063 in.) from case for 10 s 30 K/W Values typ. max. Unit R thJA Thermal resistance, junction ambient - 110 - - 70 - Soldering temperature - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V (BR)DS V GS(th) V GS=0 V, I D=0.25 A V DS=V GS, I D=0.08 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=1.1 A, T j=25 °C V GS=10 V, I D=1.1 A, T j=150 °C Gate resistance Transconductance RG g fs f =1 MHz, open drain |V DS|>2|I D|R DS(on)max, I D=1.1 A 600 2.1 700 3 3.9 V Zero gate voltage drain current I DSS - 0.5 1 µA - 2.0 50 100 2.5 nA Ω - 5.2 9 1.75 S Rev. 2.3 page 2 2005-02-21 SPN02N60C3 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance C iss C oss C rss V GS=0 V, V DS=25 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V V DD=350 V, V GS=10 V, I D=1.8 A, R G=25 Ω 16 6 3 68 12 30 ns 200 90 4 8 pF Values typ. max. Unit Effective output capacitance, energy C o(er) related3) Effective output capacitance, time related4) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage 1) 2) C o(tr) t d(on) tr t d(off) tf Q gs Q gd Qg V plateau V DD=420 V, I D=1.8 A, V GS=0 to 10 V - 1.6 4 10 5.5 13 - nC V Pulse width limited by maximum temperature T j,max only Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 4) Rev. 2.3 page 3 2005-02-21 SPN02N60C3 Parameter Symbol Conditions min. Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current IS I S,pulse V SD t rr Q rr I rrm di rr / dt T j=25 °C V R=420 V, I F=I S, di F/dt =100 A/µs T C=25 °C V GS=0 V, I F=0.4 A, T j=25 °C 0.82 200 1.3 9 200 0.4 5.4 1.05 350 V ns µC A A/µs A Values typ. max. Unit Typical Transient Thermal Characteristics Symbol Value typ. R th1 R th2 R th3 R th4 R th5 0.113 0.156 0.875 3.63 8.29 K/W C th1 C th2 C th3 C th4 C th5 C th6 Unit Symbol Value typ. 0.0000144 0.000087 0.000123 0.0005 0.012 0.055) Ws/K Unit C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if R thCA=0 K/W. 5) Rev. 2.3 page 4 2005-02-21 SPN02N60C3 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 2 1.8 1.6 100 1.4 1.2 100 µs 101 limited by on-state resistance 10 µs 1 µs P tot [W] 1 0.8 0.6 0.4 0.2 0 0 40 80 120 160 I D [A] 1 ms 10 -1 10 ms DC 10-2 10-3 100 101 102 103 T C [°C] V DS [V] 3 Max. transient thermal impedance I D=f(V DS); T j=25 °C parameter: D=t p/T 102 4 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 5 20 V 7V 6.5 V 0.5 4 101 0.2 0.1 6V 3 Z thJS [K/W] 100 0.05 I D [A] 2 0.02 0.01 5.5 V 10-1 single pulse 5V 1 4.5 V 4V 10-2 10 -6 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0 5 10 15 20 t p [s] V DS [V] Rev. 2.2 page 5 2004-10-04 SPN02N60C3 5 Typ. output characteristics I D=f(V DS); T j=150 °C parameter: V GS 3 20 V 7V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 °C parameter: V GS 14 2.5 6.5 V 12 6V 5.5 V 4V 4.5 V 5V 5.5 V 6V 10 2 R DS(on) [Ω ] I D [A] 8 20 V 1.5 5V 6 1 4.5 V 4 0.5 4V 2 0 0 5 10 15 20 0 0 0.5 1 1.5 2 2.5 3 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=1.1 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 8 7 6 25 °C 5 6 4 5 R DS(on) [Ω ] 4 3 2 98 % I D [A] 3 2 typ 150 °C 1 1 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 T j [°C] V GS [V] Rev. 2.3 page 6 2005-02-21 SPN02N60C3 9 Typ. gate charge V GS=f(Q gate); I D=1.8 A pulsed parameter: V DD 12 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 101 150 °C, 98% 10 0.2 VDS(max) 25 °C 25 °C, 98% 8 0.8 VDS(max) V GS [V] I F [A] 6 100 150 °C 4 2 0 0 2 4 6 8 10 10-1 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche SOA I AR=f(t AR) parameter: T j(start) 2 1.75 12 Avalanche energy E AS=f(T j); I D=0.9 A; V DD=50 V 60 50 1.5 1.25 1 0.75 0.5 10 0.25 0 10 -3 40 E AS [mJ] 125 °C 25 °C I AV [A] 30 20 0 10 -2 10 -1 10 0 10 1 10 2 10 3 20 60 100 140 180 t AR [µs] T j [°C] Rev. 2.3 page 7 2005-02-21 SPN02N60C3 13 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=0.25 mA 14 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 700 104 660 103 Ciss V BR(DSS) [V] C [pF] 620 102 Coss 580 101 Crss 540 -60 -20 20 60 100 140 180 100 0 100 200 300 400 500 T j [°C] V DS [V] 15 Typ. C oss stored energy E oss= f(V DS) 2 1.6 1.2 E oss [µJ] 0.8 0.4 0 0 100 200 300 400 500 600 V DS [V] Rev. 2.3 page 8 2005-02-21 SPN02N60C3 Definition of diode switching characteristics Rev. 2.3 page 9 2005-02-21 SPN02N60C3 SOT-223 Rev. 2.3 page 10 2005-02-21 SPN02N60C3 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 11 2005-02-21