SPN02N60S5_05

SPN02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 2 1 VPS05163 VDS RDS(on) ID 600 3 0.4 SOT-223 4 V Ω A 3 Type SPN02N60S5 Package SOT-223 Ordering Code Q67040-S4207 Marking 02N60S5 Maximum Ratings Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current, tp limited by Tjmax TA = 25 °C Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, T A = 25°C Symbol ID Value 0.4 0.3 Unit A ID puls VGS VGS Ptot Tj , Tstg 2.2 ±20 ±30 1.8 -55... +150 W °C V Operating and storage temperature Rev. 2.2 Page 1 2005-02-21 SPN02N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 1.8 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Symbol min. RthJS RthJA Values typ. max. Unit Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) - 30 110 - -70 K/W Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=80µΑ, VGS=VDS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C Values typ. 700 4.5 0.5 2.5 6.8 max. 5.5 600 3.5 - Unit V V(BR)DS VGS=0V, ID=1.8A µA 1 50 100 3 nA Ω Gate-source leakage current IGSS VGS=20V, VDS=0V VGS=10V, ID=1.1A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Rev. 2.2 Page 2 2005-02-21 SPN02N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD=350V, ID=0.4A, VGS=0 to 10V VDD=350V, ID=0.4A Symbol Conditions min. Values typ. 0.5 250 110 8 30 15 110 30 max. - Unit g fs Ciss Coss Crss t d(on) tr t d(off) tf V DS≥2*I D*RDS(on)max, ID=0.3A V GS=0V, V DS=25V, f=1MHz - S pF V DD=350V, V GS=0/10V, ID=0.4A, RG=50Ω ns - 1.8 4.5 7.4 8 - nC V(plateau) VDD=350V, ID=0.4A V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.2 Page 3 2005-02-21 SPN02N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed ISM Symbol IS Conditions min. TA=25°C Values typ. 0.85 200 0.7 max. 0.4 2.2 1.05 - Unit A Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IF=IS VR=350V, IF =IS , di F/dt=100A/µs - V ns µC Rev. 2.2 Page 4 2005-02-21 SPN02N60S5 1 Power dissipation Ptot = f (TA) 1.9 SPN02N60S5 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T A=25°C 10 1 W 1.6 1.4 A 10 0 Ptot 1 0.8 0.6 ID 10 -1 1.2 10 -2 0.4 0.2 0 0 10 -3 0 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 1 2 3 20 40 60 80 100 120 °C 160 10 10 TA 10 V VDS 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 2 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 4 K/W 10 1 A 3 Z thJC 9V 10 0 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse ID 2.5 2 8V 1.5 10 -2 1 7V 0.5 6V 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 1 0 0 4 8 12 16 20 V 28 tp VDS Page 5 Rev. 2.2 2005-02-21 SPN02N60S5 5 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 0.3 A, VGS = 10 V 17 SPN02N60S5 6 Typ. transfer characteristics ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 6 Ω A 14 RDS(on) 12 10 8 6 4 2 0 -60 0 0 98% typ 1 3 ID °C 4 2 -20 20 60 100 180 4 8 12 V 20 Tj VGS 7 Typ. gate charge VGS = f (QGate ) parameter: ID = 0.4 A pulsed 16 V 0.2 VDS max SPN02N60S5 8 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 10 1 SPN02N60S5 A 12 0.8 VDS max VGS 10 0 8 6 IF 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 2 4 6 8 nC 10 4 2 10 -2 0 0 0 12 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD Page 6 Rev. 2.2 2005-02-21 SPN02N60S5 9 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPN02N60S5 10 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 V pF V(BR)DSS 680 660 10 3 C 640 10 620 600 Ciss 2 10 1 580 560 540 -60 10 0 0 Coss Crss 10 20 30 40 50 60 70 80 -20 20 60 100 °C 180 V 100 Tj VDS Definition of diodes switching characteristics Rev. 2.2 Page 7 2005-02-21 SPN02N60S5 SOT223 A 6.5 ±0.2 3 ±0.1 0.1 max 1.6 ±0.1 B 7 ±0.3 15˚max 4 1 2 3 2.3 4.6 0.5 min 0.7 ±0.1 0.28 ±0.04 0.25 Rev. 2.2 M A 0.25 Page 8 M B 2005-02-21 3.5 ±0.2 +0.2 acc. to DIN 6784 SPN02N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 Page 9 2005-02-21