SPP03N60S5_09

SPP03N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 VDS RDS(on) ID 600 1.4 3.2 PG-TO220 2 V Ω A 1 23 Type Package Ordering Code SPP03N60S5 PG-TO220 Q67040-S4184 Marking 03N60S5 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 3.2 2 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 2.4 A, VDD = 50 V I D puls EAS 5.7 100 0.2 3.2 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 3.2 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C VGS Ptot T j , T stg 38 -55... +150 Operating and storage temperature Rev. 2.7 Page 1 2009-11-26 SPP03N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 3.2 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=135µΑ, VGS=V DS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C Symbol min. RthJC RthJA Values typ. 35 max. 3.3 62 62 260 - Unit K/W RthJA Tsold - °C Values typ. 700 4.5 0.5 1.26 3.4 max. 5.5 600 3.5 - Unit V V(BR)DS VGS=0V, ID=3.2A µA 1 70 100 1.4 nA Ω Gate-source leakage current IGSS VGS=20V, VDS=0V VGS=10V, ID=2A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Rev. 2.7 Page 2 2009-11-26 SPP03N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD=350V, ID=3.2A, VGS=0 to 10V VDD=350V, ID=3.2A Symbol Conditions min. Values typ. 1.8 420 150 3.6 35 25 40 15 22.5 max. - Unit g fs Ciss Coss Crss t d(on) tr t d(off) tf V DS≥2*I D*RDS(on)max, ID=2A - S pF V GS=0V, V DS=25V, f=1MHz V DD=350V, V GS=0/10V, ID=3.2A, RG=20Ω ns - 3.5 7 12.4 8 16 - nC V(plateau) VDD=350V, ID=3.2A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow Rev. 2.7 Page 3 2009-11-26 SPP03N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IF=IS VR=350V, IF =IS , di F/dt=100A/µs Symbol IS ISM Conditions min. TC=25°C Values typ. 1 1000 2.3 max. 3.2 5.7 1.2 1700 - Unit A V ns µC Typical Transient Thermal Characteristics Symbol Value typ. Unit Symbol Value typ. Unit Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.054 0.103 0.178 0.757 0.682 0.202 K/W Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00005232 0.0002034 0.0002963 0.0009103 0.002084 0.024 Ws/K Tj R th1 R th,n T case E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.7 Page 4 2009-11-26 SPP03N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) 40 SPP03N60S5 ID = f ( V DS ) parameter : D = 0 , T C=25°C 10 1 W A 32 28 10 0 Ptot 24 20 16 ID 10 -1 12 8 4 0 0 10 -2 0 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 20 40 60 80 100 120 °C 160 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) parameter: D = tp/T 10 1 ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 10 A K/W 8 10V 20V 12V ZthJC 10 0 7 ID 6 5 9V 8.5V 4 10 -1 3 2 1 10 -2 -5 10 -4 -3 -2 -1 0 8V 7.5V 7V 6.5V 10 10 10 10 s 10 0 0 5 10 15 V VDS 25 tp Rev. 2.7 Page 5 2009-11-26 SPP03N60S5 5 Drain-source on-state resistance 6 Typ. transfer characteristics RDS(on) = f (Tj) parameter : ID = 2 A, VGS = 10 V 8 SPP03N60S5 ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 8 Ω 6 A RDS(on) 6 5 ID 98% typ °C 5 4 4 3 3 2 2 1 1 0 -60 -20 20 60 100 180 0 0 4 8 12 V 20 Tj VGS 7 Typ. gate charge VGS = f (QGate) parameter: ID = 3.2 A pulsed 16 V 0.2 VDS max SPP03N60S5 8 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 10 1 SPP03N60S5 A 12 0.8 VDS max VGS 10 0 8 6 IF 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 2 4 6 8 10 12 14 16 nC 19 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 10 4 2 0 0 QGate VSD Page 6 Rev. 2.7 2009-11-26 SPP03N60S5 9 Avalanche SOA 10 Avalanche energy IAR = f (tAR) par.: Tj ≤ 150 °C 3.5 EAS = f (Tj) par.: ID = 2.4 A, V DD = 50 V 120 A Tj(START) =25°C 2.5 mJ 2 60 1.5 Tj(START) =125°C 40 1 20 0.5 0 -3 10 EAS -2 -1 0 1 2 4 IAR 80 10 10 10 10 10 µs 10 tAR 0 20 40 60 80 100 120 °C 160 Tj 11 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPP03N60S5 12 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 V pF V(BR)DSS 680 660 640 620 600 10 3 Ciss C 10 2 Coss 10 1 580 560 540 -60 10 0 0 Crss -20 20 60 100 °C 180 10 20 30 40 50 60 70 80 V VDS 100 Tj Rev. 2.7 Page 7 2009-11-26 SPP03N60S5 Definition of diodes switching characteristics Rev. 2.7 Page 8 2009-11-26 SPP03N60S5 PG-TO220-3-1, PG-TO220-3-21 Rev. 2.7 Page 9 2009-11-26 SPP03N60S5 Rev. 2.7 Page 10 2009-11-26