SPP07N60C3

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220FP PG-TO262 650 0.6 7.3 PG-TO220 2 V Ω A 1 23 P-TO220-3-1 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type SPP07N60C3 Package PG-TO220-3 Ordering Code Q67040-S4400 Marking 07N60C3 07N60C3 07N60C3 SPI07N60C3 PG-TO262 Q67040-S4424 SPA07N60C3 PG-TO220FP SP000216303 Maximum Ratings Parameter Symbol Value SPP_I SPA Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 7.3 4.6 7.31) 4.61) Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD =50V ID puls 21.9 21.9 A EAS EAR IAR 230 0.5 230 0.5 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=7.3A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static 7.3 7.3 A VGS ±20 ±30 ±20 ±30 V Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C VGS Ptot 83 32 W Operating and storage temperature Reverse diode dv/dt Rev. 3.1 6) T j , Tstg dv/dt Page 1 -55...+150 15 °C V/ns 2007-08-30 SPP07N60C3 SPI07N60C3, SPA07N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 480 V, ID = 7.3 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol min. RthJC RthJC_FP RthJA RthJA_FP RthJA Values typ. max. Unit Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 3) - 35 1.5 3.9 62 80 62 - K/W Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at T j=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=7.3A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=350µA, VGS=VDS VDS=600V, VGS=0V, Tj=25°C Tj=150°C Values typ. 700 3 0.5 0.54 1.46 0.8 max. 3.9 600 2.1 - Unit V µA 1 100 100 0.6 nA Ω Gate-source leakage current I GSS VGS=30V, VDS=0V VGS=10V, ID=4.6A Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Rev. 3.1 Page 2 2007-08-30 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol Conditions min. Values typ. 6 790 260 16 30 55 6 3.5 60 7 max. 100 15 Unit g fs Ciss Coss Crss V DS≥2*I D*RDS(on)max, ID=4.6A V GS=0V, V DS=25V, f=1MHz - S pF Effective output capacitance,4) Co(er) energy related Effective output capacitance,5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V GS=0V, V DS=0V to 480V td(on) tr td(off) tf V DD=380V, V GS=0/13V, ID=7.3A, RG=12Ω, Tj=125°C - ns VDD=480V, ID=7.3A - 3 9.2 21 5.5 27 - nC VDD=480V, ID=7.3A, VGS=0 to 10V V(plateau) VDD=480V, ID=7.3A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. 6I