SPP08P06P_09

SPP08P06P G SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.3 -8.8 V W · · · · A • Pb-free lead plating; RoHS compliant Type SPP08P06P G Package PG-TO220-3 Pin 1 G PIN 2/4 D PIN 3 S Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -8.8 -6.2 Unit A ID T C = 25 °C T C = 100 °C Pulsed drain current ID puls EAS EAR dv/dt -35.2 70 4.2 6 kV/µs mJ T C = 25 °C Avalanche energy, single pulse I D = -8.8 A , VDD = -25 V, R GS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = -8.8 A, V DS = -48 , di/dt = 200 A/µs, T jmax = 175 °C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 42 -55...+175 55/175/56 V W °C T C = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev 1.5 Page 1 2009-04-14 SPP08P06P G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. max. 3.6 62 62 40 K/W Unit RthJC RthJA RthJA - Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. -3 max. -4 µA -0.1 -10 -10 0.23 -1 -100 -100 0.3 nA V Unit V(BR)DSS VGS(th) IDSS -60 -2.1 VGS = 0 V, I D = -250 µA Gate threshold voltage, VGS = VDS I D = -250 µA, Tj = 25 °C Zero gate voltage drain current VDS = -60 V, V GS = 0 V, T j = 25 °C VDS = -60 V, V GS = 0 V, T j = 150 °C Gate-source leakage current IGSS RDS(on) - VGS = -20 V, VDS = 0 V Drain-source on-state resistance W VGS = -10 V, I D = -6.2 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.5 Page 2 2009-04-14 SPP08P06P G Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs Ciss Coss Crss td(on) 1.5 - 3.6 335 105 65 16 420 135 95 24 S pF VDS³2*I D*RDS(on)max , ID = -6.2 A Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -10 V, ID = -6.2 A, RG = 6 W Rise time tr - 46 69 VDD = -30 V, V GS = -10 V, ID = -6.2 A, RG = 6 W Turn-off delay time td(off) - 48 72 VDD = -30 V, V GS = -10 V, ID = -6.2 A, RG = 6 W Fall time tf - 14 21 VDD = -30 V, V GS = -10 V, ID = -6.2 A, RG = 6 W Rev 1.5 Page 3 2009-04-14 SPP08P06P G Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Gate to source charge Values typ. max. Unit Qgs Qgd Qg V(plateau) - 1.4 4 10 -3.85 2.1 6 15 - nC VDD = -48 , ID = -8.8 A Gate to drain charge VDD = -48 V, ID = -8.8 A Gate charge total VDD = -48 V, ID = -8.8 A, VGS = 0 to -10 V Gate plateau voltage V VDD = -48 , I D = -8.8 A Parameter Reverse Diode Inverse diode continuous forward current Symbol min. Values typ. -1.17 60 100 max. -8.8 -35.2 -1.55 90 150 Unit IS ISM VSD trr Qrr - A T C = 25 °C Inverse diode direct current,pulsed T C = 25 °C Inverse diode forward voltage V ns nC VGS = 0 V, I F = -8.8 A Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/µs Rev 1.5 Page 4 2009-04-14 SPP08P06P G Power dissipation Drain current Ptot = f (TC) SPP08P06P ID = f (TC ) parameter: VGS ³ 10 V SPP08P06P 50 -10 W 40 35 A -8 -7 Ptot 30 25 20 15 10 5 0 0 ID 100 120 140 160 °C 190 -6 -5 -4 -3 -2 -1 0 0 20 40 60 80 20 40 60 80 100 120 140 160 °C 190 TC TC Safe operating area Transient thermal impedance I D = f ( VDS ) parameter : D = 0 , T C = 25 °C -10 2 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPP08P06P SPP08P06P K/W A tp = 12.0 µs 10 0 -10 1 ID 100 µs Z thJC 10 -1 V DS /I D = D = 0.50 1 ms on ) -10 0 R DS ( 10 -2 0.20 0.10 single pulse 0.05 0.02 0.01 10 ms DC 10 -3 -10 -1 -1 -10 -10 0 -10 1 V -10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Rev 1.5 Page 5 tp 2009-04-14 SPP08P06P G Typ. output characteristic Typ. drain-source-on-resistance I D = f (VDS); T j=25°C parameter: tp = 80 µs SPP08P06P RDS(on) = f (ID ) parameter: VGS SPP08P06P -21 Ptot = 42.00W j i VGS [V] a b 1.0 A -18 -16 -14 -4.0 -4.5 W 0.8 hc d a b c d e f g h RDS(on) -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -10.0 0.7 0.6 0.5 0.4 0.3 0.2 ID g e f -12 -10 e fg h i j -8 d -6 c -4 b -2 0 0 a 0.1 0.0 0 VGS [V] = a b c d e f -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 g h i j -7.0 -7.5 -8.0 -10.0 i j -2 -4 -6 -8 V -11 -2 -4 -6 -8 -10 -12 -14 A -18 VDS ID Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance VDS³ 2 x I D x RDS(on)max parameter: tp = 80 µs -30 gfs = f(ID); Tj=25°C parameter: gfs 6 A S -24 -22 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 -1 -2 -3 -4 -5 -6 -7 -8 gfs V -10 VGS -20 4 ID 3 2 1 0 0 -2 -4 -6 -8 -10 -12 -14 -16 A -20 ID Rev 1.5 Page 6 2009-04-14 SPP08P06P G Drain-source on-state resistance Gate threshold voltage RDS(on) = f (Tj) parameter : I D = -6.2 A, V GS = -10 V SPP08P06P VGS(th) = f (Tj) parameter: VGS = VDS , ID = -250 µA -5.0 1.0 W 0.8 V 98% -4.0 RDS(on) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 V GS(th) -3.5 -3.0 -2.5 typ 98% typ 2% -2.0 -1.5 -1.0 -0.5 0.0 -60 -20 20 60 100 140 °C 200 -20 20 60 100 °C 180 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) parameter: VGS=0V, f=1 MHz 10 3 IF = f (VSD ) parameter: Tj , tp = 80 µs -10 2 SPP08P06P A pF Ciss -10 1 C 10 2 Coss Crss -10 0 IF Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 V -5 -10 -15 -20 -25 -30 -40 -10 -1 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VDS VSD Page 7 Rev 1.5 2009-04-14 SPP08P06P G Avalanche energy Typ. gate charge EAS = f (Tj) para.: I D = -8.8 A , VDD = -25 V, R GS = 25 W 80 VGS = f (QGate ) parameter: ID = -8.8 A pulsed SPP08P06P -16 mJ V 60 -12 E AS 50 VGS -10 40 -8 0,2 VDS max 0,8 VDS max 30 -6 20 -4 10 -2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 2 4 6 8 10 12 nC 15 QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPP08P06P -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 V(BR)DSS -20 20 60 100 140 °C 200 Tj Rev 1.5 . Page 8 2009-04-14 SPP08P06P G PG-TO220-3 Rev 1.5 Page 9 2009-04-14 SPP08P06P G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.5 Page 10 2009-04-14