SPP11N60C3

Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS™=Power Transistor Feature •=New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge •=Periodic avalanche rated • Extreme dv/dt rated •=High peak current capability •=Improved transconductance •=150 °C operating temperature P-TO262-3-1 C OLMOS O Power Semiconductors Product Summary VDS @ Tjmax RDS(on) ID P-TO263-3-2 650 0.38 11 V Ω A P-TO220-3-1 Type SPP11N60C3 SPB11N60C3 SPI11N60C3 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67040-S4395 Q67040-S4396 Q67042-S4403 Marking 11N60C3 11N60C3 11N60C3 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 11 7 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =5.5A, VDD =50V ID puls EAS EAR IAR dv/dt VGS VGS Ptot Tj , Tstg Page 1 33 340 0.6 11 6 ±20 ±30 125 -55... +150 W °C A V/ns V mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID =11A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS =11A, VDS