SPP11N60C3_09

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220FP PG-TO262 650 0.38 11 PG-TO220 V Ω A • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type SPP11N60C3 SPI11N60C3 SPA11N60C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4395 Q67042-S4403 Q67040-S4408 Q67040-S4408 Marking 11N60C3 11N60C3 11N60C3 SPA11N60C3E8185 PG-TO220 11N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol SPP_I ID 11 7 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Page 1 Value SPA Unit A 11 1) 71) 33 340 0.6 11 ±20 ±30 33 W °C V/ns A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V 33 340 0.6 11 ±20 ±30 125 15 Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7) Rev. 3.2 -55...+150 2009-11-27 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 3) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 4) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=500µA, VGS =VDS VDS=600V, V GS=0V, Tj=25°C Tj=150°C Symbol min. RthJC RthJC_FP RthJA RthJA_FP RthJA Tsold - Values typ. 35 max. 1 3.8 62 80 62 260 Unit K/W °C Values typ. 700 3 0.1 0.34 0.92 0.86 max. 3.9 600 2.1 - Unit V V(BR)DS VGS=0V, ID=11A µA 1 100 100 0.38 nA Ω Gate-source leakage current I GSS VGS=30V, V DS=0V VGS=10V, ID=7A Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Rev. 3.2 Page 2 2009-11-27 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol gfs Ciss Coss Crss VGS=0V, VDS=0V to 480V Conditions min. VDS≥2*ID*R DS(on)max, ID=7A VGS=0V, VDS=25V, f=1MHz Values typ. 8.3 1200 390 30 45 85 10 5 44 5 max. 70 9 - Unit S pF Effective output capacitance,5) Co(er) energy related Effective output capacitance,6) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg td(on) tr td(off) tf VDD=380V, VGS=0/10V, ID=11A, RG =6.8Ω - ns VDD=480V, ID=11A - 5.5 22 45 5.5 60 - nC VDD=480V, ID=11A, VGS=0 to 10V V(plateau) VDD=480V, ID=11A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5C 6C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V DSS. 7ISD