SPP12N50C3

SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO262 P-TO263-3-2 560 0.38 11.6 V Ω A P-TO220-3-31 P-TO220-3-1 2 1 P-TO220-3-1 23 • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code SPP12N50C3 SPB12N50C3 SPI12N50C3 SPA12N50C3 Maximum Ratings Parameter P-TO220-3-1 P-TO263-3-2 P-TO262 Q67040-S4579 Q67040-S4641 Q67040-S4578 Marking 12N50C3 12N50C3 12N50C3 12N50C3 P-TO220-3-31 Q67040-S4577 Symbol ID Value Unit SPA SPP_B_I Continuous drain current TC = 25 °C TC = 100 °C A 11.6 7 11.6 1) 71) 34.8 340 0.6 11.6 ±20 ±30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD =50V ID puls EAS EAR IAR VGS VGS Ptot 34.8 340 0.6 11.6 ±20 ±30 A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=11.6A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage A V W Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C 125 33 Operating and storage temperature T j , Tstg -55...+150 °C Rev. 2.1 Page 1 2004-03-29 SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 400 V, ID = 11.6 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol min. RthJC RthJC_FP RthJA RthJA_FP RthJA Values typ. max. Unit Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 3) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4) - 35 - 1 3.8 62 80 62 260 K/W Tsold - °C Electrical Characteristics, at T j=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=11.6A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=500µA, VGS=VDS VDS=500V, VGS=0V, Tj=25°C Tj=150°C Values typ. 600 3 0.1 0.34 0.92 1.4 max. 3.9 500 2.1 - Unit V µA 1 100 100 0.38 nA Ω Gate-source leakage current I GSS VGS=20V, VDS=0V VGS=10V, ID=7A Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Rev. 2.1 Page 2 2004-03-29 SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol Conditions min. Values typ. 8 1200 400 30 45 92 10 8 45 8 max. - Unit g fs Ciss Coss Crss V DS≥2*I D*RDS(on)max, ID=7A V GS=0V, V DS=25V, f=1MHz - S pF Effective output capacitance,5) Co(er) energy related Effective output capacitance,6) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V GS=0V, V DS=0V to 400V td(on) tr td(off) tf V DD=380V, V GS=0/10V, ID=11.6A, R G=6.8Ω - ns VDD=400V, ID=11.6A - 5 26 49 5 - nC VDD=400V, ID=11.6A, VGS=0 to 10V V(plateau) VDD=400V, ID=11.6A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 6C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 2.1 Page 3 2004-03-29 SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.015 0.03 0.056 0.197 0.216 0.083 Tj P tot ( t) C th1 C th2 C th,n T am b Symbol IS ISM VSD trr Qrr Irrm dirr /dt Conditions min. TC=25°C Values typ. 1 380 5.5 38 1100 max. 11.6 34.8 1.2 - Unit A VGS=0V, IF=IS VR=400V, IF=IS , diF/dt=100A/µs - V ns µC A A/µs Tj=25°C Value SPP_B_I SPA 0.15 0.03 0.056 0.194 0.413 2.522 R th1 Unit K/W Symbol Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Value SPP_B_I 0.0001878 0.0007106 0.000988 0.002791 0.007285 0.063 SPA 0.0001878 0.0007106 0.000988 0.002791 0.007401 0.412 Unit Ws/K E xternal H eatsink Rev. 2.1 Page 4 2004-03-29 SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 1 Power dissipation Ptot = f (TC) 140 SPP12N50C3 2 Power dissipation FullPAK Ptot = f (TC) 36 W W 120 110 100 28 Ptot 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 Ptot °C 24 20 16 12 8 4 0 0 160 20 40 60 80 100 120 °C 160 TC TC 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TC =25°C 10 2 4 Safe operating area FullPAK ID = f (VDS) parameter: D = 0, TC = 25°C 10 2 A A 10 1 10 1 ID 10 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 -2 0 10 10 1 10 2 V VDS 10 3 10 -2 0 10 10 1 10 2 10 V VDS 3 Rev. 2.1 Page 5 2004-03-29 SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 5 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 1 6 Transient thermal impedance FullPAK ZthJC = f (t p) parameter: D = tp/t 10 1 K/W 10 0 K/W 10 0 ZthJC 10 -1 ZthJC 10 -1 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 tp 7 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 40 8 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 22 A 32 28 20V 10V 8V 7V A 18 16 6.5V 20V 8V 7.5V 7V 6V ID 24 20 ID 14 12 5.5V 6V 10 8 5V 16 12 8 5V 5.5V 6 4 2 4.5V 4V 4 0 0 4.5V 5 10 15 V VDS 25 0 0 5 10 15 V VDS 25 Rev. 2.1 Page 6 2004-03-29 SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 2 10 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 7 A, VGS = 10 V Ω 2.1 SPP12N50C3 Ω 4V 4.5V 5V 5.5V 6V 1.8 1.6 1.4 1.2 1.4 1.2 RDS(on) RDS(on) 1.6 1 0.8 0.6 98% 1 0.8 0.6 6.5V 8V 20V 2 4 6 8 10 12 14 16 0.4 0.2 typ 0.4 0 A ID 20 0 -60 -20 20 60 100 °C 180 Tj 11 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 40 12 Typ. gate charge VGS = f (Q Gate) parameter: ID = 11.6 A pulsed 16 SPP12N50C3 A 25°C V 32 12 28 VGS ID 24 20 16 12 150°C 10 0,2 VDS max 0,8 VDS max 8 6 4 8 4 0 0 2 1 2 3 4 5 6 7 8 V 10 VGS 0 0 10 20 30 40 50 nC 70 Q Gate Rev. 2.1 Page 7 2004-03-29 SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 13 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 10 2 SPP12N50C3 14 Avalanche SOA IAR = f (tAR) par.: Tj ≤ 150 °C 11 A A 9 8 IAR 10 1 IF 7 6 5 T j(START) =25°C 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 4 3 2 1 0 -3 10 10 -2 T j(START) =125°C 10 -1 10 0 10 1 10 2 VSD 4 µs 10 tAR 15 Avalanche energy EAS = f (Tj) par.: ID = 5.5 A, V DD = 50 V 350 16 Drain-source breakdown voltage V(BR)DSS = f (Tj) 600 SPP12N50C3 V mJ V(BR)DSS °C 570 560 550 540 530 250 EAS 200 150 520 510 500 100 490 480 50 470 460 0 20 40 60 80 100 120 160 450 -60 -20 20 60 100 °C 180 Tj Tj Page 8 Rev. 2.1 2004-03-29 SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 17 Avalanche power losses PAR = f (f ) parameter: E AR=0.6mJ 300 18 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 pF Ciss W 10 3 PAR 200 10 2 150 10 1 100 10 0 50 Crss C Coss 04 10 10 5 Hz f 10 6 10 -1 0 100 200 300 V 500 VDS 19 Typ. Coss stored energy Eoss=f(VDS) 6 µJ Eoss 4 3 2 1 0 0 100 200 300 V 500 VDS Rev. 2.1 Page 9 2004-03-29 SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 Definition of diodes switching characteristics Rev. 2.1 Page 10 2004-03-29 SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 P-TO-220-3-1 B 10 ±0.4 3.7 ±0.2 A 1.27±0.13 4.44 15.38 ±0.6 2.8 ±0.2 C 5.23 ±0.9 13.5 ±0.5 3x 0.75 ±0.1 1.17 ±0.22 2x 2.54 0.25 M 0.5 ±0.1 2.51±0.2 ABC All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-263-3-2 (D 2-PAK) Rev. 2.1 9.98 ±0.48 0.05 Page 11 2004-03-29 SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 P-TO-262-3-1 (I2-PAK) 10 ±0.2 0...0.3 8.5 1) 1) A B 4.4 1.27 1 ±0.3 11.6 ±0.3 2.4 C 4.55 ±0.2 13.5 ±0.5 0...0.15 1.05 3 x 0.75 ±0.1 2 x 2.54 1) 0.5 ±0.1 2.4 0.25 M ABC Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01) Rev. 2.1 9.25 ±0.2 7.55 0.05 Page 12 2004-03-29 SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 Page 13 2004-03-29