SPP15N60C3

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220FP PG-TO262 650 0.28 15 PG-TO220 V Ω A • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type SPP15N60C3 SPI15N60C3 SPA15N60C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4600 Q67040-S4601 SP000216325 Marking 15N60C3 15N60C3 15N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID 15 9.4 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt page 1 Value SPP_I SPA Unit A 151) 9.41) 45 460 0.8 15 ±20 ±30 34 W °C V/ns 2009-12-22 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=7.5A, VDD=50V 45 460 0.8 15 ±20 ±30 156 15 A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=15A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 6) Rev. 3.2 A V -55...+150 SPP15N60C3, SPI15N60C3 SPA15N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 15 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=675µA, VGS =VDS VDS=600V, V GS=0V, Tj=25°C Tj=150°C Symbol min. RthJC RthJC_FP RthJA RthJA_FP Tsold - Values typ. max. 0.8 3.7 62 80 260 Unit K/W °C Values typ. 700 3 0.1 0.25 0.68 1.23 max. 3.9 600 2.1 - Unit V V(BR)DS VGS=0V, ID=15A µA 1 100 100 0.28 nA Ω Gate-source leakage current I GSS VGS=30V, V DS=0V VGS=10V, ID=9.4A Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Rev. 3.2 page 2 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance,5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD=480V, ID=15A, VGS=0 to 10V VDD=480V, ID=15A Symbol gfs Ciss Coss Crss Conditions min. VDS≥2*ID*R DS(on)max, ID=9.4A VGS=0V, VDS=25V, f=1MHz Values typ. 11.9 1660 540 40 80 127 10 5 50 5 max. 80 10 - Unit S pF Effective output capacitance,4) Co(er) VGS=0V, VDS=0V to 480V td(on) tr td(off) tf VDD=480V, VGS=0/10V, ID=15A, RG =4.3Ω - ns - 7 29 63 5 - nC V(plateau) VDD=480V, ID=15A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Soldering temperature for TO-263: 220°C, reflow 4C 5C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V DSS. 6I