SPP15P06P

SPP15P10P SIPMOS Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Avalanche rated • dv/dt rated Product Summary VDS RDS(on) ID -100 0.24 -15 PG-TO220-3-1 V Ω A Drain pin 2 Type SPP15P10P Package PG-TO220-3-1 Ordering Code Q67042-S4166 Gate pin1 Source pin 3 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value -15 -10.6 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -60 230 6 ±20 128 -55... +175 55/175/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =-15 A , VDD =-25V, RGS=25Ω Reverse diode dv/dt IS =-15A, VDS =-48V, di/dt=-200A/µs, Tjmax =150°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev 1.2 Page 1 2005-02-11 SPP15P10P Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA - Values typ. max. 1.17 75 45 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) -100 -4 Values typ. -3 max. -2.1 Unit V Gate threshold voltage, VGS = VDS ID =-1.54mA Zero gate voltage drain current VDS =-100V, VGS =0, Tj =25°C VDS =-100V, VGS =0, Tj =150°C µA -0.1 -10 -10 0.18 -1 -100 -100 0.24 nA Ω Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-10V, ID =-10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.2 Page 2 2005-02-11 SPP15P10P Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD =-50V, VGS =-10V, ID =-15A, RG =6Ω |VDS|≥ 2*|ID |*RDS(on)max ID =-10.7A VGS =0, VDS =-25V, f=1MHz Symbol Conditions min. 4.7 - Values typ. 9.3 944 226 91 8.9 30 35 22 max. 1180 283 114 13.4 45 53 33 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0, |IF | = |IS | VR =-50V, |IF | = |IS |, diF /dt=100A/µs Qgs Qgd Qg VDD =-80V, ID =-15A - -4.5 -15.3 -33.4 -5.7 -6.7 -23 -50 - nC VDD =-80V, ID =-15A, VGS =0 to -10V V(plateau) VDD =-80V, ID =-15A V IS TA=25°C - -0.94 100 419 -15 -60 A -1.35 V 150 628 ns nC Rev 1.2 Page 3 2005-02-11 SPP15P10P 1 Power dissipation Ptot = f (TC ) SPP15P10P 2 Drain current ID = f (TC ) parameter: |VGS | ≥ 10V -16 SPP15P10P 3.6 W A 2.8 -12 Ptot ID 20 40 60 80 100 120 140 160 °C 190 2.4 2 -10 -8 1.6 -6 1.2 0.8 0.4 0 0 -4 -2 0 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C -10 2 SPP15P10P tp = 18.0 µs 4 Max. transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 SPP15P10P K/W A 10 0 Z thJC ID 100 µs 10 -1 -10 1 D = 0.50 10 / ID -2 0.20 0.10 1 ms 0.05 10 -3 0.02 single pulse 0.01 n) =V DS RD S(o 10 ms -10 0 -1 -10 DC -10 0 -10 1 -10 2 V -10 3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Rev 1.2 Page 4 tp 2005-02-11 SPP15P10P 5 Typ. output characteristic ID = f (VDS ) parameter: Tj =25°C, -VGS 40 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS ; Tj =25°C, -VGS 1 19.9V A 10V 8V 7V 32 6V 5.5V 28 5V 4.5V 24 4V 20 16 12 8 4 0 0 Ω 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 4V 4.5V 5V 5.5V 6V 7V 8V 10V 19.9V 1 2 3 4 5 6 V RDS(on) -I D 8 5 10 15 20 25 30 A 40 -VDS -ID 7 Typ. transfer characteristics ID= f ( VGS ); |VDS |≥ 2 x |ID | x RDS(on)max parameter: Tj = 25 °C A 30 8 Typ. forward transconductance gfs = f(ID) parameter: Tj =25°C 14 S 24 22 10 -I D 18 16 14 g fs 8 6 4 2 1 2 3 4 5 7 0 0 20 12 10 8 6 4 2 0 0 V 4 8 12 16 20 24 A 30 -VGS Rev 1.2 Page 5 -ID 2005-02-11 SPP15P10P 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -10.6 A, VGS = -10 V SPP15P10P 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 5.2 0.75 Ω 4.4 0.6 4 3.6 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 -60 -20 20 60 100 140 °C 98% RDS(on) 0.55 3.2 2.8 2.4 2% typ. 98% 2 1.6 typ 1.2 0.8 0.4 200 0 -60 -20 20 60 100 180 Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 °C 10 4 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj -10 2 SPP15P10P pF A Ciss 10 3 -10 1 C Coss 10 2 Crss IF -10 0 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 -10 -1 0 4 8 12 16 20 24 28 V 36 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 -VDS Rev 1.2 Page 6 VSD 2005-02-11 SPP15P10P 13 Typ. avalanche energy EAS = f (Tj ); par.: ID = -15 A , VDD = -25 V, RGS = 25 Ω 250 mJ 14 Typ. gate charge VGS = f (QGate ) parameter: ID = -15 A pulsed, Tj = 25°C -16 V SPP15P10P 200 -12 175 150 125 100 75 -4 50 25 0 25 -2 20% E AS VGS -10 50% 80% -8 -6 50 75 100 125 °C 175 0 0 10 20 30 40 nC 55 Tj |QG | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPP15P10P -120 V V (BR)DSS -114 -112 -110 -108 -106 -104 -102 -100 -98 -96 -94 -92 -90 -60 -20 20 60 100 140 °C 200 Tj Rev 1.2 Page 7 2005-02-11 SPP15P10P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.2 Page 8 2005-02-11