SPP15P10PG

SPP15P10P G SPD15P10P G SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID -100 0.24 -15 V Ω A PG-TO220-3 PG-TO252-3 Type SPP15P10P G SPD15P10P G Package PG-TO220-3 PG-TO252-3 Marking 15P10P 15P10P Lead free Yes Yes Packing Non dry Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD Class Soldering temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=-15 A, R GS=25 Ω Value -15 -10.6 -60 230 ±20 128 -55 ... 175 1C (1kV to 2kV) 260 °C 55/175/56 mJ V W °C Unit A Rev 1.6 page 1 2009-08-25 SPP15P10P G SPD15P10P G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJC minimal footprint, steady state 6 cm2 cooling area1), steady state Values typ. max. Unit - - 1.17 K/W R thJA - - 75 - - 45 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-1 mA V GS(th) V DS=V GS, I D=1.54 mA V DS=-100 V, V GS=0 V, T j=25 °C V DS=-100 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20 V, V DS=0 V V GS=-10 V, I D=-10.6 A |V DS|>2|I D|R DS(on)max, I D=-10.6 A -100 -4 -3 -2.1 V Zero gate voltage drain current I DSS - -0.1 -1 µA - -10 -10 160 -100 -100 240 nA mΩ Transconductance g fs 4.7 9.3 - S 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev 1.6 page 2 2009-08-25 SPP15P10P G SPD15P10P G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr V R=50 V, I F=|I S|, di F/dt =100 A/µs T C=25 °C V GS=0 V, I F=-15 A, T j=25 °C -0.94 100 419 -15 60 -1.35 150 628 V ns nC A Q gs Q gd Qg V plateau V DD=-80 V, I D=-15 A, V GS=0 to -10 V 5.4 18 37 5.9 7.2 27 48 V nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-50 V, V GS=-10 V, I D=-15 A, R G=6 Ω V GS=0 V, V DS=-25 V, f =1 MHz 961 237 100 9.5 23 33 16 1280 315 150 15.9 33 43 20 ns pF Values typ. max. Unit 2) See figure 16 for gate charge parameter definition Rev 1.6 page 3 2009-08-25 SPP15P10P G SPD15P10P G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); |V GS|≥10 V 140 16 120 12 100 P tot [W] -I D [A] 80 8 60 40 4 20 0 0 40 80 120 160 0 0 40 80 120 160 T C [°C] T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 limited by on-state resistance 100 µs 1 µs 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 101 1 ms 100 -I D [A] 10 ms DC Z thJS [K/W] 0.5 0.2 0.1 0.05 100 10-1 0.02 0.01 single pulse 10-1 10 0 10-2 10 1 10 2 10 3 10-5 10-4 10-3 10-2 10-1 100 -V DS [V] t p [s] Rev 1.6 page 4 2009-08-25 SPP15P10P G SPD15P10P G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 40 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 500 -4 V -4.5 V 35 -10 V 30 -8 V -7 V 400 -5 V 20 R DS(on) [mΩ ] 25 -6 V -I D [A] -6 V 300 15 -7 V 10 -5 V 200 -8 V -10 V 5 -4.5 V -4 V 0 0 2 4 6 8 10 100 0 10 20 30 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 10 25 °C 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 20 8 125 °C 15 6 -I D [A] g fs [S] 4 2 0 1 3 5 7 10 5 0 0 5 10 15 20 25 30 -V GS [V] -I D [A] Rev 1.6 page 5 2009-08-25 SPP15P10P G SPD15P10P G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-10.6 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-1.54 mA 500 5 400 4 min. 98 % R DS(on) [mΩ ] -V GS(th) [V] 300 3 typ. 200 2 max. typ. 100 1 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 25 °C, typ 175 °C, 98% 10 10 3 1 175 °C, typ 25 °C, 98% Ciss C [pF] I F [A] Coss 100 102 Crss 10-1 101 0 20 40 60 80 10-2 0 0.5 1 1.5 -V DS [V] -V SD [V] Rev 1.6 page 6 2009-08-25 SPP15P10P G SPD15P10P G 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 14 Typ. gate charge V GS=f(Q gate); I D=-15 A pulsed parameter: V DD 10 50 V 20 V 8 25 °C 100 °C 125 °C 80 V 101 6 - VGS [V] 4 2 0 102 103 -I AV [A] 100 10-1 100 101 0 10 20 30 40 t AV [µs] - Qgate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-1mA 16 Gate charge waveforms 120 V GS 115 Qg 110 -V BR(DSS) [V] 105 V g s(th) 100 95 Q g(th) Q sw Q g ate 90 -60 -20 20 60 100 140 180 Q gs Q gd T j [°C] Rev 1.6 page 7 2009-08-25 SPP15P10P G SPD15P10P G Package Outline: PG-TO-252-3 Rev 1.6 page 8 2009-08-25 SPP15P10P G SPD15P10P G PG-TO220-3: Outline Rev 1.6 page 9 2009-08-25 SPP15P10P G SPD15P10P G Rev 1.6 page 10 2009-08-25