SPP24N60C3

SPP24N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS @ Tjmax RDS(on) ID 650 0.16 24.3 V Ω A PG-TO220-3-1 Type SPP24N60C3 Package Ordering Code PG-TO220-3-1 Q67040-S4639 Marking 24N60C3 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TC = 25 °C TC = 100 °C A 24.3 15.4 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 10 A, VDD = 50 V I D puls EAS 72.9 780 1 24.3 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 24.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C V/ns VGS Ptot T j , T stg dv/dt 240 -55... +150 15 Operating and storage temperature Reverse diode dv/dt 4) Rev. 2.5 Page 1 2009-12-01 SPP24N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 480 , ID = 24.3 , Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Symbol min. RthJC RthJA Values typ. max. 0.52 62 K/W Unit Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=1200µΑ, VGS=VDS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C Values typ. 700 3 0.1 0.14 0.34 0.66 max. 3.9 600 2.1 - Unit V V(BR)DS VGS=0V, ID=24.3A µA 1 100 100 0.16 nA Ω Gate-source leakage current IGSS VGS=20, VDS =0V VGS=10V, ID=15.4A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Rev. 2.5 Page 2 2009-12-01 SPP24N60C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol g fs Ciss Coss Crss Conditions min. V DS≥2*I D*RDS(on)max, ID=15.4A Values typ. 21.5 3000 1000 60 141 224 13 21 140 14 max. - Unit S pF V GS=0V, V DS=25V, f=1MHz Effective output capacitance, 2) Co(er) energy related Effective output capacitance, 3) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time V GS=0V, V DS=0V to 480V pF td(on) tr td(off) tf V DD=380V, V GS=0/10V, ID=24.3A, R G=3.3Ω - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg VDD=480, ID=24.3A - 12.7 45.8 104.9 5 135 - nC VDD=480V, ID=24.3A, VGS=0 to 10V V(plateau) VDD=480V, ID=24.3A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. 4ISD