SPP24N60CFD_09

SPP24N60CFD CoolMOSTM Power Transistor Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability Product Summary V DS @ Tjmax R DS(on),max ID 650 V 0.185 " 21.7 PG-TO220 A • Qualified for industrial grade applications according to JEDEC1) • CoolMOS CFD designed for • Softswitching PWM Stages • LCD & CRT TV Type SPP24N60CFD Package PG-TO220 TO-220 Marking 24N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive2),3) Avalanche current, repetitive2),3) Drain source voltage slope Reverse diode d v /dt Maximum diode commutation speed Gate source voltage I D,pulse E AS E AR I AR dv /dt dv /dt di /dt V GS I D=21.7A, V DS=480V, T j=125°C I S=21.7A, V DS=480 V, T j=125°C static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque P tot T j, T stg M3 & M3.5 screws T C=25 °C T C=25 °C I D=10A, V DD=50 V I D=20A, V DD=50 V Value 21.7 13.7 55 780 1 20 80 40 600 ±20 ±30 240 -55 ... 150 60 W °C Ncm A V/ns V/ns A/µs V mJ Unit A Rev. 1.3 page 1 2009-12-01 SPP24N60CFD Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wave soldering only allowed at leads R thJC R thJA leaded 0.52 62 K/W Values typ. max. Unit T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V (BR)DS V GS(th) V GS=0 V, I D=21.7 A V DS=V GS, I D=1.2 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=15.4 A, T j=25 °C V GS=10 V, I D=15.4 A, T j=150 °C Gate resistance Transconductance RG g fs f =1 MHz, open drain |V DS|>2|I D|R DS(on)max, I D=15.4 A 600 3 700 4 5 V Zero gate voltage drain current I DSS - 2.5 - µA - 2600 0.15 100 0.185 nA " - 0.42 0.8 14.0 S Rev. 1.3 page 2 2009-12-01 SPP24N60CFD Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related4) Effective output capacitance, time related5) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Q gs Q gd Qg V plateau V DD=480 V, I D=21.7 A, V GS=0 to 10 V 15 67 110 7.3 143 V nC C iss C oss C rss C o(er) V GS=0 V, V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D= 21.7A, R G=6.8 " 188 50 24 100 9 ns V GS=0 V, V DS=25 V, f =1 MHz 3160 900 34 103 pF Values typ. max. Unit 1) J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 2) 3) 4) 5) Rev. 1.3 page 3 2009-12-01 SPP24N60CFD Parameter Symbol Conditions min. Reverse Diode Diode continuous forward current Diode pulse current2) Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current IS T C=25 °C I S,pulse V SD t rr Q rr I rrm V R=480 V, I F=I S, di F/dt =100 A/µs V GS=0 V, I F=I S, T j=25 °C 1.0 140 0.9 11 55 1.2 V ns µC A 21.7 A Values typ. max. Unit Rev. 1.3 page 4 2009-12-01 SPP24N60CFD 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 250 102 limited by on-state resistance 1 µs 200 10 µs 100 µs 101 1 ms 150 P tot [W] I D [A] DC 10 ms 100 100 50 0 0 40 80 120 160 10-1 100 101 102 103 T C [°C] V DS [V] 3 Max. transient thermal impedance I D=f(V DS); T j=25 °C parameter: D=t p/T 100 4 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 50 20 V 45 40 10 V 8V 0.5 35 Z thJC [K/W] 30 10 -1 I D [A] 0.2 25 20 7V 0.1 0.05 0.02 0.01 single pulse 15 6.5 V 10 6V 5 0 10-4 10-3 10-2 10-1 0 5 10 5V 5.5 V 10 -2 10-5 15 20 t p [s] V DS [V] Rev. 1.3 page 5 2009-12-01 SPP24N60CFD 5 Typ. output characteristics I D=f(V DS); T j=150 °C parameter: V GS 35 20 V 10 V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 °C parameter: V GS 1.2 30 8V 1 25 20 15 6.5 V R DS(on) [ ] 7V 0.8 I D [A] 0.6 5V 5.5 V 6V 6.5 V 7V 10 V 20 V 10 6V 5.5 V 0.4 5 5V 0 0 5 10 15 20 0.2 0 5 10 15 20 25 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=15.4 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.6 80 25 °C 0.5 60 0.4 R DS(on) [ ] I D [A] 0.3 40 150 °C 98 % 0.2 typ 20 0.1 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 12 14 T j [°C] V GS [V] Rev. 1.3 page 6 2009-12-01 SPP24N60CFD 9 Typ. gate charge V GS=f(Q gate); I D=21.7 A pulsed parameter: V DD 10 120 V 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 150 °C, 98% 8 480 V 25 °C 10 6 1 150 °C V GS [V] I F [A] 25 °C, 98% 4 100 2 0 0 25 50 75 100 125 10 -1 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche SOA I AR=f(t AR) parameter: T j(start) 20 12 Avalanche energy E AS=f(T j); I D=10 A; V DD=50 V 800 700 16 600 12 500 E AS [mJ] 103 104 I AV [A] 400 125 °C 25 °C 8 300 200 4 100 0 10-3 10-2 10-1 100 101 102 0 25 50 75 100 125 150 175 200 t AR [µs] T j [°C] Rev. 1.3 page 7 2009-12-01 SPP24N60CFD 13 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=10 mA 14 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 700 104 Ciss 660 103 V BR(DSS) [V] C [pF] 620 102 Coss Crss 580 101 540 -60 -20 20 60 100 140 180 10 0 0 100 200 300 400 500 T j [°C] V DS [V] 15 Typ. C oss stored energy E oss= f(V DS) 16 Typ. reverse recovery charge Q rr=f(T j);parameter: I D =21.7 A 18 1.2 15 1.1 12 E oss [µJ] 9 Q rr [µC] 0 100 200 300 400 500 600 1 6 0.9 3 0 0.8 25 50 75 100 125 V DS [V] T j [°C] Rev. 1.3 page 8 2009-12-01 SPP24N60CFD 17 Typ. reverse recovery charge Q rr=f(I S); parameter: di/ dt =100 A/µs 18 Typ. reverse recovery charge Q rr=f(di /dt ); parameter: I D=21.7 A 1.2 2.4 1 125 °C 2 125 °C Q rr [µC] Q rr [µC] 0.8 25 °C 1.6 25 °C 0.6 1.2 0.4 5 9 13 17 21 0.8 100 200 300 400 500 600 I S [A] d i/d t [A/µs] Rev. 1.3 page 9 2009-12-01 SPP24N60CFD Definition of diode switching characteristics Rev. 1.3 page 10 2009-12-01 SPP24N60CFD PG-TO-220-3-1; -3-21 Dimension in mm/ inches Rev. 1.3 page 11 2009-12-01 SPP24N60CFD Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 12 2009-12-01