SPP73N03S2L-08

SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID P- TO262 -3-1 P- TO263 -3-2 30 8.4 73 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP73N03S2L-08 SPB73N03S2L-08 SPI73N03S2L-08 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4037 Q67042-S4036 Q67042-S4081 Marking 2N03L08 2N03L08 2N03L08 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C, 1) Value 73 62 320 170 10 6 ±20 107 -55... +175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=73A, V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=73A, V DS=24, di/dt=200A/µs, T jmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-04-24 SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA - Values typ. 0.9 max. 1.4 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = V DS ID=55µA Zero gate voltage drain current V DS=30V, VGS=0V, Tj=25°C V DS=30V, VGS=0V, Tj=175°C µA 0.01 10 1 1 100 100 nA mΩ 9.9 9.5 6.8 6.5 13.4 13.1 8.4 8.1 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=36A V GS=4.5V, I D=36A, SMD version Drain-source on-state resistance4) V GS=10V, I D=36A V GS=10V, I D=36A, SMD version 1Current limited by bondwire ; with an RthJC = 1.4K/W the chip is able to carry ID= 87A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2 2003-04-24 SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =24V, ID =36A, VGS =0 to 10V VDD =24V, ID =36A Symbol Conditions min. Values typ. 63 1290 500 130 7.7 20 31.5 19 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =62A VGS =0V, VDS =25V, f=1MHz 32 - S 1710 pF 670 190 11.6 30 47.3 28.5 ns VDD =15V, VGS =10V, ID =18A, RG =4.7Ω - 4 12 34.7 3.6 5 18 46.2 - nC V(plateau) VDD =24V, ID =36A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr V GS=0V, IF=73A V R=15V, I F=lS, diF/dt=100A/µs IS TC=25°C - 0.96 27 21 73 320 A 1.28 V 40 31 ns nC Page 3 2003-04-24 SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 4 V SPP73N03S2L-08 2 Drain current ID = f (T C) parameter: VGS≥ 10 V SPP73N03S2L-08 120 80 W A 100 90 60 P tot ID 100 120 140 160 °C 190 80 70 60 50 50 40 30 40 30 20 10 10 0 0 20 40 60 80 0 0 20 40 60 80 100 120 140 160 °C 190 20 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPP73N03S2L-08 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPP73N03S2L-08 K/W A t = 1.6µs p 10 /I D 0 V 10 DS 2 ID = 10 µs Z thJC R DS (on ) 10 -1 100 µs D = 0.50 10 10 1 1 ms -2 0.20 0.10 single pulse 0.05 0.02 0.01 10 -3 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-04-24 SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs SPP73N03S2L-08 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS SPP73N03S2L-08 170 Ptot = 107W hg f V [V] GS a b A 140 mΩ 3.0 3.5 4.0 4.5 5.0 5.5 6.0 10.0 28 b c d e 24 22 e c d e R DS(on) 120 20 18 16 14 12 ID 100 80 60 40 b f dg h c 10 8 6 4 VGS [V] = 2 4 b 3.5 c 4.0 d 4.5 e 5.0 f 5.5 g h 6.0 10.0 f g h 20 a 0 0 0.5 1 1.5 2 2.5 3 3.5 V 5 0 0 20 40 60 80 100 A 140 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 140 8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs 80 A S 60 100 g fs 80 60 40 20 0 ID 50 40 30 20 10 0 1 2 3 4 V VGS 6 0 0 25 50 75 100 A ID 150 Page 5 2003-04-24 SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 36 A, VGS = 10 V SPP73N03S2L-08 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 2.5 mΩ 19 16 V 0,4mA R DS(on) 12 10 8 typ 6 4 2 0 -60 98% VGS(th) 14 1.5 55µA 1 0.5 -20 20 60 100 140 °C 200 0 -60 -20 20 60 100 °C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 µs 10 3 SPP73N03S2L-08 A pF 10 2 C 10 3 Coss 10 1 IF Ciss T j = 25 °C typ T j = 175 °C typ Crss 10 2 T j = 25 °C (98%) T j = 175 °C (98%) 10 0 0 5 10 15 20 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2003-04-24 SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 13 Typ. avalanche energy E AS = f (T j) par.: I D=73A, VDD = 25 V, RGS = 25 Ω 180 14 Typ. gate charge VGS = f (QGate) parameter: ID = 36 A pulsed SPP73N03S2L-08 16 mJ V 140 12 E AS 120 100 VGS 10 0,2 VDS max 0,8 VDS max 8 80 6 60 40 20 0 25 4 2 45 65 85 105 125 145 °C 185 Tj 0 0 10 20 30 40 nC 55 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPP73N03S2L-08 V V (BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-04-24 SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP73N03S2L-08, BSPB73N03S2L-08 and BSPI73N03S2L-08, for simplicity the device is referred to by the term SPP73N03S2L-08, SPB73N03S2L-08 and SPI73N03S2L-08 throughout this documentation Page 8 2003-04-24