SPP80N06S2-08

SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID P- TO262 -3-1 P- TO263 -3-2 55 8 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N06S2-08 SPB80N06S2-08 SPI80N06S2-08 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67060-S4283 Q67060-S4284 Q67060-S7430 Marking 2N0608 2N0608 2N0608 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 450 21.5 6 ±20 215 -55... +175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.46 max. 0.7 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 55 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = V DS ID=150µA Zero gate voltage drain current V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, 125°C, 2) µA 0.01 1 1 6.5 1 100 100 8 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=58A 1Current limited by bondwire ; with an RthJC = 0.7K/W the chip is able to carry ID= 109A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =44V, ID =80A, VGS =0 to 10V VDD =44V, ID =80A Symbol Conditions min. Values typ. 77 2860 740 190 14 15 32 14 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =58A VGS =0V, VDS =25V, f=1MHz 40 - S 3800 pF 980 280 20 23 50 20 ns VDD =30V, VGS =10V, ID =80A, RG =3.3Ω --- 15 30 72 6 20 44 96 -- nC V(plateau) VDD =44V, ID =80A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF =80A VR =30V, IF =lS , diF /dt=100A/µs IS TC=25°C - 0.9 53 85 80 320 1.3 65 110 A V ns nC Page 3 2003-05-09 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 6 V 240 SPP80N06S2-08 2 Drain current ID = f (T C) parameter: VGS≥ 10 V 90 SPP80N06S2-08 W 200 A 70 180 P tot 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 °C 190 60 ID 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPP80N06S2-08 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPP80N06S2-08 K/W A t = 8.5µs p 10 µs 10 0 /I D ID = V DS 10 2 Z thJC 100 µs 10 -1 R DS (on ) D = 0.50 10 1 ms -2 0.20 0.10 0.05 10 1 10 -3 0.02 0.01 single pulse 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-05-09 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs 190 SPP80N06S2-08 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS 26 SPP80N06S2-08 Ptot = 215W i VGS [V] a b 4.5 4.8 5.0 5.2 5.5 5.8 6.0 6.5 10.0 A 160 140 mΩ 22 20 d e f g h c d R DS(on) 18 16 14 12 10 ID 120 100 80 g e hf g h i 60 f 8 6 i 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 e d c a b 4 2 4 VGS [V] = d 5.2 e 5.5 f 5.8 g 6.0 h i 6.5 10.0 V 0 5 0 20 40 60 80 100 A 130 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 160 8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs 80 A S 120 60 ID 100 g fs 50 80 40 60 30 40 20 20 10 0 0 1 2 3 4 5 7 V VGS 0 0 20 40 60 80 A 110 ID Page 5 2003-05-09 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 58 A, VGS = 10 V SPP80N06S2-08 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 4 mΩ 30 V 24 750 µA R DS(on) 22 20 18 16 14 12 10 8 6 4 2 0 -60 -20 20 60 100 140 °C 200 98% typ V GS(th) 3 2.5 150 µA 2 1.5 1 0.5 0 -60 -20 20 60 100 °C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 µs 10 3 SPP80N06S2-08 A pF Ciss 10 2 C 10 3 Coss IF 10 1 T j = 25 °C typ Crss T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 2 10 5 10 15 20 0 0 V VDS 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-05-09 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 13 Typ. avalanche energy E AS = f (T j) par.: I D = 80 A , V DD = 25 V, R GS = 25 Ω 450 14 Typ. gate charge VGS = f (QGate) parameter: ID = 80 A pulsed 16 SPP80N06S2-08 mJ V 350 12 E AS 300 250 VGS 0,2 VDS max 10 0,8 VDS max 8 200 6 150 100 50 0 25 4 2 50 75 100 125 °C Tj 0 175 0 20 40 60 80 nC 120 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 66 SPP80N06S2-08 V V(BR)DSS 62 60 58 56 54 52 50 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-09 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N06S2-08 and BSPB80N06S2-08, for simplicity the device is referred to by the term SPP80N06S2-08 and SPB80N06S2-08 throughout this documentation. Page 8 2003-05-09