SPP80P06PG

SPP80P06P G SPB80P06P G SIPMOS ® Power-Transistor Features Product Summary · P-Channel • P-Channel Drain source voltage • Enhancement mode mode · Enhancement Drain-source on-state resistance • Avalanche rated · Avalanche rated Continuous drain current • dv/dt rated · • 175°Cdv/dt ratedtemperature operating · 1 lead operating temperature • Pb-free75°C plating; RoHs compliant • Qualified according to AEC Q101 VDS RDS(on) ID -60 0.023 -80 V W A Type SPP80P06P G SPB80P06P G Package PG-TO263-3 Lead free Yes Pin 1 G PIN 2/4 D PIN 3 S PG-TO220-3 Yes Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -80 -64 Unit A ID T C = 25 °C, 1) T C = 100 °C Pulsed drain current ID puls EAS EAR dv/dt -320 823 34 6 kV/µs mJ T C = 25 °C Avalanche energy, single pulse I D = -80 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = -80 A, V DS = -48 , di/dt = 200 A/µs, T jmax = 175 °C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 340 -55...+175 55/175/56 V W °C T C = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 1Current limited by bondwire; with an RthJC = 0.4 K/W the chip is able to carry I = -91A D Rev 1.4 Page 1 2009-11-19 SPP80P06P G SPB80P06P G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. max. 0.4 62 62 40 K/W Unit RthJC RthJA RthJA - Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. -3 max. -4 µA -0.1 -10 -10 0.021 -1 -100 -100 0.023 nA V Unit V(BR)DSS VGS(th) IDSS -60 -2.1 VGS = 0 V, I D = -250 µA Gate threshold voltage, VGS = VDS I D = -5.5 mA Zero gate voltage drain current VDS = -60 V, V GS = 0 V, T j = 25 °C VDS = -60 V, V GS = 0 V, T j = 150 °C Gate-source leakage current IGSS RDS(on) - VGS = -20 V, VDS = 0 V Drain-source on-state resistance W VGS = -10 V, I D = -64 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.4 Page 2 2009-11-19 SPP80P06P G SPB80P06P G Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Input capacitance Values typ. max. Unit VDS³2*I D*RDS(on)max , ID = -64 A VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance gfs Ciss Coss Crss t d(on) 18 - 36 4026 1252 437 24 5033 1565 546 36 S pF VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W Rise time tr - 18 27 VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W Turn-off delay time t d(off) - 56 84 VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W Fall time tf - 30 45 VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W Rev 1.4 Page 3 2009-11-19 SPP80P06P G SPB80P06P G Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Gate to source charge Values typ. max. Unit Q gs Q gd Qg V(plateau) - 27.4 50 115 -6.2 41 75 173 - nC VDD = -48 V, ID = -80 A Gate to drain charge VDD = -48 V, ID = -80 A Gate charge total VDD = -48 V, ID = -80 A, V GS = 0 to -10 V Gate plateau voltage V VDD = -48 V , I D = -80 A Parameter Reverse Diode Inverse diode continuous forward current Symbol min. Values typ. -1.2 117 420 max. -80 -320 -1.6 175 630 Unit IS ISM VSD trr Qrr - A T C = 25 °C Inverse diode direct current,pulsed T C = 25 °C Inverse diode forward voltage V ns nC VGS = 0 V, I F = -80 A Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/µs Rev 1.4 Page 4 2009-11-19 SPP80P06P G SPB80P06P G Power dissipation Drain current parameter: VGS ³ 10 V SPP80P06P Ptot = f (TC) SPP80P06P ID = f (TC ) -90 360 W 280 240 A -70 -60 Ptot ID 200 160 120 80 40 0 0 -50 -40 -30 -20 -10 0 0 100 120 140 160 °C 190 20 40 60 80 20 40 60 80 100 120 140 160 °C 190 TC TC Safe operating area Transient thermal impedance I D = f ( VDS ) parameter : D = 0 , T C = 25 °C -10 3 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPP80P06P SPP80P06P K/W A tp = 14.0 µs 10 0 -10 2 Z thJC 100 µs 10 -1 ID V DS /I D = 1 ms 10 -2 D = 0.50 0.20 10 -3 DS ( on ) -10 1 R 10 ms 0.10 0.05 DC 10 -4 single pulse 0.02 0.01 -10 0 -1 -10 -10 0 -10 1 V -10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Rev 1.4 Page 5 tp 2009-11-19 SPP80P06P G SPB80P06P G Typ. output characteristic Typ. drain-source-on-resistance I D = f (VDS); T j=25°C parameter: tp = 80 µs SPP80P06P RDS(on) = f (ID ) parameter: VGS SPP80P06P -190 Ptot = 340.00W k j VGS [V] a b 0.075 A -160 -140 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0 W b c d e f g h i 0.060 i c d RDS(on) 0.055 0.050 0.045 0.040 0.035 0.030 0.025 0.020 ID -120 -100 -80 -60 -40 -20 0 0 c e h f g g h i fj k e d 0.015 0.010 VGS [V] = b c d e f -4.5 -5.0 -5.5 -6.0 -6.5 g h i j k -7.0 -7.5 -8.0 -9.0 -10.0 b a 0.005 -8 jk -1 -2 -3 -4 -5 -6 -7 V -10 0.000 0 -20 -40 -60 -80 -100 -120 A -160 VDS ID Typ. transfer characteristics I D= f ( V GS ) VDS³ 2 x I D x RDS(on)max parameter: tp = 80 µs -80 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 50 A S 40 -60 35 -50 gfs -1 -2 -3 -4 -5 -6 -7 -8 ID 30 25 20 15 -40 -30 -20 10 -10 5 0 0 0 0 V -10 VGS -10 -20 -30 -40 -50 -60 -70 -80 A -100 ID Rev 1.4 Page 6 2009-11-19 SPP80P06P G SPB80P06P G Drain-source on-state resistance Gate threshold voltage RDS(on) = f (Tj) parameter : I D = -64 A, VGS = -10 V SPP80P06P VGS(th) = f (Tj) parameter: VGS = VDS , ID = -5.5 mA -5.0 0.070 W V 98% -4.0 0.060 0.055 RDS(on) 0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 -60 -20 20 60 100 140 °C 200 V GS(th) -3.5 typ -3.0 -2.5 98% typ 2% -2.0 -1.5 -1.0 -0.5 0.0 -60 -20 20 60 100 140 Tj °C 200 Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) parameter: VGS=0V, f=1 MHz 10 5 IF = f (VSD ) parameter: Tj , tp = 80 µs 10 3 SPP80P06P pF A 10 4 10 2 C Ciss Coss 10 3 10 1 IF Crss Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 2 0 -5 -10 -15 V -25 10 0 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VDS VSD Page 7 Rev 1.4 2009-11-19 SPP80P06P G SPB80P06P G Avalanche energy Typ. gate charge EAS = f (Tj) 850 para.: I D = -80 A , VDD = -25 V, RGS = 25 W mJ VGS = f (QGate ) parameter: ID = -80 A pulsed SPP80P06P -16 V 700 -12 600 E AS VGS -10 500 0,2 VDS max 0,8 VDS max 400 -8 300 200 -6 -4 100 -2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 20 40 60 80 100 120 140 nC 180 QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPP80P06P -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 V(BR)DSS -20 20 60 100 140 °C 200 Tj Rev 1.4 Page 8 2009-11-19 SPP80P06P G SPB80P06P G PG-TO220-3 Rev 1.4 Page 9 2009-11-19 SPP80P06P G SPB80P06P G PG-TO263-3 Rev 1.4 Page 10 2009-11-19 SPP80P06P G SPB80P06P G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.4 Page 11 2009-11-19