SPU01N60C3

Rev. 2.0 SPU01N60C3 SPD01N60C3 VDS @ Tjmax RDS(on) ID P-TO252 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 650 6 0.8 V Ω A P-TO251-3-1 Type SPU01N60C3 SPD01N60C3 Package P-TO251-3-1 P-TO252 Ordering Code Q67040-S4193 Q67040-S4188 Marking 01N60C3 01N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 0.6 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 0.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C Symbol ID Value 0.8 0.5 Unit A I D puls EAS 1.6 20 0.01 0.8 ±20 ±30 11 -55... +150 W °C A V mJ VGS Ptot T j , T stg Operating and storage temperature Page 1 2004-03-01 Rev. 2.0 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, I D = 0.8 A, Tj = 125 °C SPU01N60C3 SPD01N60C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=0.8A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=250µΑ, VGS=V DS V DS=600V, VGS=0V, Tj=25°C, Tj=150°C Symbol min. RthJC RthJA RthJA Tsold - Values typ. max. 11 75 75 50 260 Unit K/W °C Values typ. 700 3 0.1 5.6 15.1 max. 3.9 600 2.1 - Unit V µA 1 50 100 6 nA Ω Gate-source leakage current I GSS V GS=30V, VDS=0V V GS=10V, ID=0.5A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Page 2 2004-03-01 Rev. 2.0 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V DD=350V, ID=0.8A, V GS=0 to 10V V DD=350V, ID=0.8A SPU01N60C3 SPD01N60C3 Values min. typ. 0.75 100 40 2.5 30 25 55 30 max. 82 45 ns S pF Unit Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Conditions V DS≥2*I D*RDS(on)max, ID=0.5A V GS=0V, V DS=25V, f=1MHz V DD=350V, V GS=0/10V, ID=0.8A, RG=100Ω - 0.9 2.2 3.9 5.5 5 - nC V(plateau) V DD=350V, ID=0.8A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 3 2004-03-01 Rev. 2.0 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD t rr Q rr VGS =0V, I F=IS VR =350V, IF=IS , diF/dt=100A/µs SPU01N60C3 SPD01N60C3 Values min. typ. 1 570 0.75 max. 0.8 1.6 1.2 970 V ns µC A Unit Symbol IS I SM Conditions TC=25°C Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.225 0.395 0.603 0.995 0.691 0.148 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00001221 0.00005037 0.0000809 0.0002915 0.001844 0.412 Ws/K Unit Symbol Value typ. Unit Tj P tot ( t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2004-03-01 Rev. 2.0 1 Power dissipation Ptot = f (TC) 12 SPU01N60C3 SPU01N60C3 SPD01N60C3 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25°C 10 1 W A 10 9 Ptot 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 10 -1 ID 8 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC °C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 2 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 2.5 K/W A 10 1 20V 10V 7V 6.5V ZthJC ID 10 0 1.5 6V 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 1 s 10 1 5.5V 0.5 5V 10 -2 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 0 0 5 10 15 V VDS 25 tp Page 5 2004-03-01 Rev. 2.0 5 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 0.5 A, VGS = 10 V 34 SPU01N60C3 SPU01N60C3 SPD01N60C3 6 Typ. transfer characteristics ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 2.5 Ω 28 A RDS(on) 24 ID 20 16 12 8 4 0 -60 98% typ -20 20 60 100 °C 1.5 1 0.5 180 0 0 4 8 12 VGS 20 Tj V 7 Typ. gate charge VGS = f (QGate ) parameter: ID = 0.8 A pulsed 16 V SPU01N60C3 8 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 10 1 SPU01N60C3 A 12 VGS 0.2 VDS max 0.8 VDS max 10 0 8 6 IF 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) nC 10 4 2 10 -2 0 0 0 1 2 3 4 5.5 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate Page 6 VSD 2004-03-01 Rev. 2.0 9 Avalanche SOA IAR = f (tAR) par.: Tj ≤ 150 °C 0.9 SPU01N60C3 SPD01N60C3 10 Avalanche energy EAS = f (Tj) par.: ID = 0.6 A, V DD = 50 V 22 A mJ 18 0.7 0.6 0.5 0.4 0.3 0.2 Tj(START) =25°C 16 EAS Tj(START) =125°C -2 -1 0 1 2 IAR 14 12 10 8 6 4 0.1 0 -3 10 2 10 10 10 10 10 µs 10 tAR 4 0 25 50 75 100 125 150 200 °C Tj 11 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPU01N60C3 12 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 3 V pF Ciss 10 2 V(BR)DSS 680 660 640 620 600 580 560 540 -60 10 0 0 10 1 C Coss Crss -20 20 60 100 °C 180 10 20 30 40 50 60 70 80 Tj Page 7 V 100 VDS 2004-03-01 Rev. 2.0 SPU01N60C3 SPD01N60C3 Definition of diodes switching characteristics Page 8 2004-03-01 Rev. 2.0 P-TO-252-3-1 (D-PAK) SPU01N60C3 SPD01N60C3 P-TO-251-3-1 (I-PAK) 6.5 +0.15 -0.10 A 1 ±0.1 2.3 +0.05 -0.10 B 0.9 +0.08 -0.04 5.4 ±0.1 C 6.22 -0.2 0.15 max per side 9.3 ±0.4 3 x 0.75 ±0.1 2.28 4.56 0.25 M 0.5 +0.08 -0.04 1.0 ABC GPT09050 All metal surfaces tin plated, except area of cut. Page 9 2004-03-01 Rev. 2.0 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. SPU01N60C3 SPD01N60C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 10 2004-03-01