SPU04N60S5_08

SPU04N60S5 SPD04N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS RDS(on) ID PG-TO252 2 3 1 600 0.95 4.5 PG-TO251 V Ω A 1 2 3 Type Package Ordering Code SPU04N60S5 SPD04N60S5 PG-TO251 PG-TO252 Q67040-S4228 Q67040-S4202 Marking 04N60S5 04N60S5 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 4.5 2.8 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 3.4 A, VDD = 50 V I D puls EAS 9 130 0.4 4.5 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 4.5 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C VGS Ptot T j , T stg 50 -55... +150 Operating and storage temperature Rev. 2.5 Page 1 2008-04-08 SPU04N60S5 SPD04N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 4.5 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, *) 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=200µΑ, VGS=V DS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C Symbol min. RthJC RthJA Values typ. 35 max. 2.5 62 62 260 - Unit K/W RthJA Tsold - °C Values typ. 700 4.5 0.5 0.85 2.3 20 max. 5.5 600 3.5 - Unit V V(BR)DS VGS=0V, ID=4.5A µA 1 50 100 0.95 nA Ω Gate-source leakage current IGSS VGS=20V, VDS=0V VGS=10V, ID=2.8A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain *) TO252: reflow soldering, MSL3; TO251: wavesoldering Rev. 2.5 Page 2 2008-04-08 SPU04N60S5 SPD04N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol Conditions min. Values typ. 2.5 580 220 7 20 35 55 30 60 15 max. 90 22.5 Unit g fs Ciss Coss Crss V DS≥2*I D*RDS(on)max, ID=2.8A - S pF V GS=0V, V DS=25V, f=1MHz Effective output capacitance, 3) Co(er) energy related Effective output capacitance, 4) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V GS=0V, V DS=0V to 480V pF t d(on) tr t d(off) tf V DD=350V, V GS=0/10V, ID=4.5A, RG=18Ω - ns V DD=350V, V GS=0/10V, ID=4.5A, RG=18 V DD=350V, V GS=0/10V, ID=4.5A, RG=18Ω VDD=350V, ID=4.5A - 4.5 11 17.6 8 22.9 - nC VDD=350V, ID=4.5A, VGS=0 to 10V V(plateau) VDD=350V, ID=4.5A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V o(er) DSS. 4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 2.5 Page 3 2008-04-08 SPU04N60S5 SPD04N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IF=IS VR=350V, IF =IS , diF/dt=100A/µs Symbol IS ISM Conditions min. TC=25°C Values typ. 1 900 3.2 max. 4.5 9 1.2 1530 - Unit A V ns µC Typical Transient Thermal Characteristics Symbol Value typ. Unit Symbol Value typ. Unit Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.039 0.074 0.132 0.555 0.529 0.169 K/W Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00007347 0.0002831 0.0004062 0.001215 0.00276 0.029 Ws/K Tj R th1 R th,n T case E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.5 Page 4 2008-04-08 SPU04N60S5 SPD04N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) 55 SPU04N60S5 ID = f ( V DS ) parameter : D = 0 , T C=25°C 10 1 W A 45 40 Ptot 10 0 30 25 20 15 10 5 0 0 20 40 60 80 100 120 10 -1 ID 35 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC °C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) parameter: D = tp/T 10 1 ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 14 K/W A 20V 12V 10V 9.5V ZthJC 10 0 10 ID 8 9V 6 10 -1 4 8.5V 8V 7.5V 2 7V 6.5V 10 -2 -5 10 10 -4 10 -3 10 -2 s 10 -1 0 0 5 10 15 V VDS 25 tp Rev. 2.5 Page 5 2008-04-08 SPU04N60S5 SPD04N60S5 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 8 RDS(on)=f(ID) parameter: Tj=150°C, V GS 5 A 20V 12V 10V 9.5V mΩ 9V 8.5V RDS(on) 4 ID 8V 3.5 4 7.5V 3 2.5 7V 2 6.5V 6V 2 1.5 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 1 2 3 4 5 6 7 0 0 5 10 15 V VDS 25 1 0 A ID 8.5 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) parameter : ID = 2.8 A, VGS = 10 V 5.5 SPU04N60S5 ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 16 Ω 4.5 A RDS(on) 4 12 ID 98% typ °C 3.5 3 10 8 2.5 2 1.5 1 0.5 0 -60 -20 20 60 100 180 6 4 2 0 0 2 4 6 8 10 12 14 16 Tj V 20 VGS Rev. 2.5 Page 6 2008-04-08 SPU04N60S5 SPD04N60S5 9 Typ. gate charge VGS = f (QGate) parameter: ID = 4.5 A pulsed 16 V 0.2 VDS max SPU04N60S5 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 10 1 SPU04N60S5 A 12 0.8 VDS max VGS 10 0 8 6 IF 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 4 8 12 16 20 nC 10 4 2 10 -2 0 0 0 26 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) par.: Tj ≤ 150 °C 5 EAS = f (Tj) par.: ID = 3.4 A, V DD = 50 V 160 A 4 3.5 mJ Tj(START) =25°C 120 EAS Tj(START) =125°C -2 -1 0 1 2 4 IAR 3 2.5 2 1.5 100 80 60 40 1 0.5 0 -3 10 20 10 10 10 10 10 µs 10 tAR 0 20 40 60 80 100 120 °C 160 Tj Rev. 2.5 Page 7 2008-04-08 SPU04N60S5 SPD04N60S5 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPU04N60S5 14 Avalanche power losses PAR = f (f ) parameter: E AR=0.4mJ 200 V W V(BR)DSS 680 660 640 150 PAR 125 100 620 75 600 580 560 540 -60 50 25 -20 20 60 100 °C 180 04 10 10 5 Hz f 10 6 Tj 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 Eoss=f(VDS) 3.5 pF µJ Ciss 10 3 2.5 C Eoss 2 10 2 1.5 Coss 10 1 1 Crss 0.5 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Rev. 2.5 Page 8 2008-04-08 SPU04N60S5 SPD04N60S5 Definition of diodes switching characteristics Rev. 2.5 Page 9 2008-04-08 SPU04N60S5 SPD04N60S5 PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK) Rev. 2.5 Page 10 2008-04-08 SPU04N60S5 SPD04N60S5 PG-TO251-3-1, PG-TO251-3-21 (I-PAK) Rev. 2.5 Page 11 2008-04-08 SPU04N60S5 SPD04N60S5 Rev. 2.5 Page 12 2008-04-08