SPU07N60S5_08

SPU07N60S5 SPD07N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 VDS RDS(on) ID PG-TO252 2 3 1 600 0.6 7.3 PG-TO251 V Ω A • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 1 2 3 Type Package Ordering Code SPU07N60S5 SPD07N60S5 PG-TO251 PG-TO252 Q67040-S4196 Q67040-S4186 Marking 07N60S5 07N60S5 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 7.3 4.6 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = - A, V DD = 50 V I D puls EAS 14.6 230 0.5 7.3 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 7.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C VGS Ptot T j , T stg 83 -55... +150 Operating and storage temperature Rev. 2.5 Page 1 2008-04-10 SPU07N60S5 SPD07N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 7.3 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, *) 1.6 mm (0.063 in.) from case for 10s Tsold Symbol min. RthJC RthJA RthJA Values typ. - Unit max. 1.5 75 75 50 260 °C K/W - Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=7.3A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=350µΑ, VGS=V DS Values typ. 700 4.5 0.5 0.54 1.46 19 Unit max. 5.5 µA 1 100 100 0.6 nA Ω 600 3.5 - V V DS=600V, VGS=0V, Tj=25°C, Tj=150°C Gate-source leakage current I GSS V GS=20V, VDS=0V V GS=10V, ID=4.6A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain *) TO252: reflow soldering, MSL3; TO251: wavesoldering Rev. 2.5 Page 2 2008-04-10 SPU07N60S5 SPD07N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance g fs Ciss Coss Crss V GS=0V, V DS=0V to 480V V DS≥2*I D*RDS(on)max, ID=4.6A Symbol Conditions min. V DD=350V, V GS=0/10V, ID=7.3A, RG=12Ω Values typ. 4 970 370 10 30 55 120 40 170 20 Unit max. 255 30 ns pF S pF V GS=0V, V DS=25V, f=1MHz Effective output capacitance,3) Co(er) energy related Effective output capacitance,4) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time t d(on) tr t d(off) tf - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg VDD=350V, ID=7.3A - 7.5 16.5 27 8 35 - nC VDD=350V, ID=7.3A, VGS=0 to 10V V(plateau) VDD=350V, ID=7.3A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V o(er) DSS. 4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 2.5 Page 3 2008-04-10 SPU07N60S5 SPD07N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IF=IS VR=350V, IF =IS , diF/dt=100A/µs Symbol IS ISM Conditions min. TC=25°C Values typ. 1 750 4.9 max. 7.3 14.6 1.2 1275 - Unit A V ns µC Typical Transient Thermal Characteristics Symbol Value typ. Unit Symbol Value typ. Unit Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.024 0.046 0.085 0.308 0.317 0.112 K/W Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00012 0.0004578 0.000645 0.001867 0.004795 0.045 Ws/K Tj R th1 R th,n T case E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.5 Page 4 2008-04-10 SPU07N60S5 SPD07N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) 100 SPU07N60S5 ID = f ( V DS ) parameter : D = 0 , T C=25°C 10 2 W 80 70 A 10 1 Ptot 60 50 40 30 20 10 0 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 20 40 60 80 100 120 °C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Typ. output characteristic 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 25 ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 12 20V A 12V A 20V 12V 10V 9V ID 15 10V ID 8 8.5V 6 9V 8V 10 4 8V 7.5V 7V 5 7V 2 6.5V 6V 0 0 5 10 15 V VDS 25 0 0 5 10 15 V VDS 25 Rev. 2.5 Page 5 2008-04-10 SPU07N60S5 SPD07N60S5 5 Typ. drain-source on resistance 6 Drain-source on-state resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 3 RDS(on) = f (Tj) parameter : ID = 4.6 A, VGS = 10 V 3.4 SPU07N60S5 Ω mΩ 2.8 RDS(on) 2 1.5 RDS(on) 2.4 2 1.6 1 0 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 2 4 6 8 10 1.2 0.8 0.4 0 -60 98% typ A ID 14 -20 20 60 100 °C 180 Tj 7 Typ. transfer characteristics 8 Typ. gate charge VGS = f (Q Gate) parameter: ID = 7.3 A pulsed 16 V SPU07N60S5 ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 24 A 20 18 0.2 VDS max 12 0.8 VDS max VGS ID 16 14 12 10 25 °C 150 °C 10 8 6 8 6 4 2 2 0 0 4 8 12 4 V 20 0 0 4 8 12 16 20 24 28 32 nC 38 VGS Q Gate Page 6 Rev. 2.5 2008-04-10 SPU07N60S5 SPD07N60S5 9 Forward characteristics of body diode 10 Avalanche SOA IF = f (VSD) parameter: Tj , tp = 10 µs 10 2 SPU07N60S5 IAR = f (tAR) par.: Tj ≤ 150 °C 8 A A 6 IAR 10 1 IF 5 T j(START) =25°C 4 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 3 T j(START) =125°C 2 1 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 VSD 4 µs 10 tAR 11 Avalanche energy 12 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPU07N60S5 EAS = f (Tj) par.: ID = - A, VDD = 50 V 260 mJ 220 V EAS 180 160 140 120 100 80 60 40 20 0 20 40 60 80 100 120 V(BR)DSS °C 200 680 660 640 620 600 580 560 540 -60 160 -20 20 60 100 °C 180 Tj Tj Page 7 Rev. 2.5 2008-04-10 SPU07N60S5 SPD07N60S5 13 Avalanche power losses 14 Typ. capacitances PAR = f (f ) parameter: E AR=0.5mJ 300 C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 pF W Ciss 10 3 PAR 200 C 150 10 2 Coss 100 10 1 50 Crss 04 10 10 5 MHz f 10 6 10 0 0 100 200 300 400 V 600 VDS 15 Typ. Coss stored energy Eoss=f(VDS) 5.5 µJ 4.5 4 Eoss 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Rev. 2.5 Page 8 2008-04-10 SPU07N60S5 SPD07N60S5 Definition of diodes switching characteristics Rev. 2.5 Page 9 2008-04-10 SPU07N60S5 SPD07N60S5 PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK) Rev. 2.5 Page 10 2008-04-10 SPU07N60S5 SPD07N60S5 PG-TO251-3-1, PG-TO251-3-21 (I-PAK) Rev. 2.5 Page 11 2008-04-10 SPU07N60S5 SPD07N60S5 Rev. 2.5 Page 12 2008-04-10