SPW11N60C2

Final data SPW11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity Product Summary VDS RDS(on) ID 600 0.38 11 P-TO247 V Ω A Type SPW11N60C2 Package P-TO247 Ordering Code Q67040-S4313 Marking 11N60C2 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 11 7 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =5.5A, VDD =50V ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg 22 340 0.6 11 6 ±20 125 -55... +150 A V/ns V W °C mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID =11A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS =11A, VDS < VDD, di/dt=100A/µs, Tjmax =150°C Gate source voltage Power dissipation, TC = 25°C Operating and storage temperature Page 1 2002-10-07 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA SPW11N60C2 Symbol min. RthJC RthJA Tsold - Values typ. max. 1 62 1 260 Unit K/W W/K °C V(BR)DSS V(BR)DS VGS(th) IDSS 600 3.5 700 4.5 5.5 V Drain-source avalanche breakdown voltage VGS =0V, ID =11A Gate threshold voltage, VGS = VDS ID =0.5mA Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 150 °C µA 0.34 0.86 25 250 100 0.38 nA Ω Gate-source leakage current VGS =20V, VDS=0V IGSS RDS(on) RG - Drain-source on-state resistance VGS =10V, ID=7A, Tj=25°C Gate input resistance f = 1 MHz, open drain 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR Page 2 2002-10-07 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 2) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =350V, ID =11A, VGS =0 to 10V VDD =350V, ID =11A SPW11N60C2 Symbol Conditions min. Values typ. 6 1460 610 21 45 85 13 40 48 9 max. 72 13.5 Unit g fs Ciss Coss Crss V DS≥2*I D*R DS(on)max, ID=7A V GS=0V, V DS=25V, f=1MHz 3 - S pF Effective output capacitance, 1) Co(er) V GS=0V, V DS=0V to 480V pF t d(on) tr t d(off) tf V DD=380V, V GS=0/13V, ID=11A, R G=6.8Ω, Tj=125°C - ns - 10.5 24 41.5 8 54 - nC V(plateau) VDD =350V, ID =11A V 1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS . 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-10-07 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt V GS=0V, I F=IS V R=350V, I F=I S , diF/dt=100A/µs SPW11N60C2 Symbol Conditions min. Values typ. 1 650 7.9 30 600 max. 11 22 1.2 1105 - Unit IS ISM TC=25°C - A V ns µC A A/µs Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.015 0.034 0.042 0.116 0.149 0.059 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.0002121 0.0007091 0.001184 0.001527 0.011 0.089 Ws/K Unit Symbol Value typ. Unit Tj P tot ( t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2002-10-07 Final data 1 Power dissipation Ptot = f (TC ) SPW11N60C2 SPW11N60C2 2 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC =25°C 10 2 140 W 120 110 100 A 10 1 Ptot 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 10 -1 ID 10 0 90 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC °C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (tp ) parameter: D = tp/T 10 1 4 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 35 20V K/W A 10 0 25 10 -1 12V 10V ZthJC ID 20 9V 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 15 8V 10 7V 6V 5 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 0 0 5 10 15 V VDS 25 Page 5 2002-10-07 Final data 5 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 18 SPW11N60C2 6 Typ. drain-source on resistance RDS(on) =f(ID ) parameter: Tj =150°C, VGS 2 A 20V 12V 10V 9V 8V 14 12 10 RDS(on) Ω ID 1 8 7V 6 4 6V 0.5 20V 12V 10V 9V 8V 7V 6V 2 0 0 0 0 5 10 15 V VDS 25 2 4 6 8 10 12 14 A ID 18 7 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 7 A, VGS = 10 V Ω 2.1 SPW11N60C2 8 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 32 A 1.8 1.6 1.4 1.2 1 0.8 0.6 98% 0.4 0.2 0 -60 typ 4 8 16 24 RDS(on) ID 20 25 °C 150 °C 12 -20 20 60 100 °C 180 0 0 4 8 12 V VGS 20 Tj Page 6 2002-10-07 Final data 9 Forward characteristics of body diode IF = f (VSD ) parameter: Tj , tp = 10 µs 10 2 SPW11N60C2 SPW11N60C2 10 Typ. switching time t = f (RG ), inductive load, Tj =125°C par.: VDS =380V, VGS=0/+13V, ID=11 A 10 3 A ns td(off) td(on) 10 1 10 2 IF t tr tf 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -1 0 10 1 0.4 0.8 1.2 1.6 2 2.4 V 3 10 0 0 10 20 30 40 50 Ω RG 70 VSD 11 Typ. switching losses E = f (ID ), inductive load, Tj=125°C par.: VDS =380V, VGS=0/+13V, RG =6.8Ω 0.7 *) E on includes SDP06S60 diode commutation losses. 12 Typ. switching losses E = f(RG ), inductive load, Tj =125°C par.: VDS =380V, VGS=0/+13V,ID =11A 0.4 *) Eon includes SDP06S60 diode commutation losses. mWs mWs 0.5 E 0.4 0.2 0.3 E Eoff Eon* Eoff 0.2 Eon* 0.1 0.1 0 0 5 10 15 A ID 25 0 0 10 20 30 40 50 Ω RG 70 Page 7 2002-10-07 Final data 13 Avalanche SOA IAR = f (tAR ) par.: Tj ≤ 150 °C 11 SPW11N60C2 14 Avalanche energy EAS = f (Tj ) par.: ID = 5.5 A, VDD = 50 V 350 A mJ 9 8 7 6 5 4 3 2 50 1 0 -3 10 10 -2 T j(START) =125°C T j(START) =25°C 250 EAS 200 150 100 -1 0 1 2 4 µs 10 tAR IAR 10 10 10 10 0 20 40 60 80 100 120 °C 160 Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPW11N60C2 16 Avalanche power losses PAR = f (f ) parameter: EAR =0.6mJ 300 720 V W V (BR)DSS 680 P AR 660 640 200 150 620 600 580 50 560 540 -60 04 10 100 -20 20 60 100 °C 180 10 5 Hz f 10 6 Tj Page 8 2002-10-07 Final data 17 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 SPW11N60C2 18 Typ. Coss stored energy Eoss=f(VDS ) pF Ciss 10 3 µJ 7.5 6 5.5 E oss 10 2 5 4.5 4 C Coss 3.5 3 2.5 10 1 Crss 2 1.5 1 0.5 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Definition of diodes switching characteristics Page 9 2002-10-07 Final data P-TO-247-3-1 15.9 6.35 ø3.61 5.03 2.03 SPW11N60C2 4.37 20.9 9.91 6.17 D 7 D 1.75 1.14 0.243 1.2 2 2.92 5.46 16 0.762 MAX. 2.4 +0.05 General tolerance unless otherwise specified: Leadframe parts: ±0.05 Package parts: ±0.12 41.22 2.97 x 0.127 5˚ 5.94 20˚ Page 10 2002-10-07 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. SPW11N60C2 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 2002-10-07