SPW11N60S5

SPW11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS RDS(on) ID 600 0.38 11 PG-TO247 V Ω A Type SPW11N60S5 Package PG-TO247 Ordering Code Q67040-S4239 Marking 11N60S5 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TC = 25 °C TC = 100 °C A 11 7 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 5.5 A, VDD = 50 V I D puls EAS 22 340 0.6 11 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C VGS Ptot T j , T stg 125 -55... +150 Operating and storage temperature Rev. 2.4 Page 1 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW11N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 11 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Symbol min. RthJC RthJA Values typ. max. 1 62 K/W Unit Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=500µΑ, VGS=V DS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C Values typ. 700 4.5 0.34 0.92 29 max. 5.5 600 3.5 - Unit V V(BR)DS VGS=0V, ID=11A µA 25 250 100 0.38 nA Ω Gate-source leakage current IGSS VGS=20V, VDS=0V VGS=10V, ID=7A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Rev. 2.4 Page 2 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW11N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol Conditions min. Values typ. 6 1460 610 21 45 85 130 35 150 20 max. 225 30 Unit g fs Ciss Coss Crss V DS≥2*I D*RDS(on)max, ID=7A - S pF V GS=0V, V DS=25V, f=1MHz Effective output capacitance, 2) Co(er) energy related Effective output capacitance, 3) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time V GS=0V, V DS=0V to 480V pF t d(on) tr t d(off) tf V DD=350V, V GS=0/10V, ID=11A, R G=6.8Ω - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg VDD=350V, ID=11A - 10.5 24 41.5 8 54 - nC VDD=350V, ID=11A, VGS=0 to 10V V(plateau) VDD=350V, ID=11A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 2.4 Page 3 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW11N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IF=IS VR=350V, IF =IS , di F/dt=100A/µs Symbol IS ISM Conditions min. TC=25°C Values typ. 1 650 7.9 max. 11 22 1.2 1105 - Unit A V ns µC Typical Transient Thermal Characteristics Symbol Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.015 0.03 0.056 0.197 0.216 0.083 K/W Value typ. Unit Symbol Value typ. Unit Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.0001878 0.0007106 0.000988 0.002791 0.007285 0.063 Ws/K Tj R th1 R th,n T case E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.4 Page 4 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW11N60S5 1 Power dissipation Ptot = f (TC) 140 SPW11N60S5 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25°C 10 2 W A 120 110 100 10 1 Ptot 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 10 -1 10 0 ID 90 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC °C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 1 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 35 K/W A 10 0 25 10 -1 20V 12V 10V ZthJC ID 20 9V 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 15 8V 10 7V 5 6V 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 0 0 5 10 15 VDS 25 V Rev. 2.4 Page 5 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW11N60S5 5 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 18 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, V GS 2 A 20V 12V 10V 9V 8V 14 12 10 mΩ RDS(on) ID 1 8 7V 6 4 6V 0.5 20V 12V 10V 9V 8V 7V 6V 2 0 0 0 0 5 10 15 V VDS 25 2 4 6 8 10 12 14 A ID 18 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 7 A, VGS = 10 V Ω 2.1 SPW11N60S5 8 Typ. transfer characteristics ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 32 A 1.8 1.6 1.4 1.2 1 0.8 0.6 98% 0.4 0.2 0 -60 -20 20 60 100 °C RDS(on) 24 ID 20 25 °C 150 °C 16 12 8 typ 4 180 0 0 4 8 12 V 20 Tj VGS Rev. 2.4 Page 6 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW11N60S5 9 Typ. gate charge VGS = f (QGate) parameter: ID = 11 A pulsed 16 V 0.2 VDS max SPW11N60S5 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 10 2 SPW11N60S5 A 12 0.8 VDS max VGS 10 1 8 6 IF 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 20 30 40 50 nC 10 4 2 10 -1 0 0 0 65 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA IAR = f (tAR) par.: Tj ≤ 150 °C 11 12 Avalanche energy EAS = f (Tj) par.: ID = 5.5 A, V DD = 50 V 350 A mJ 9 8 7 6 5 4 3 2 1 0 -3 10 10 -2 Tj (START) =125°C Tj (START) =25°C 250 EAS 200 150 100 50 -1 0 1 2 4 µs 10 tAR IAR 10 10 10 10 0 20 40 60 80 100 120 °C 160 Tj Rev. 2.4 Page 7 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW11N60S5 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPW11N60S5 14 Avalanche power losses PAR = f (f ) parameter: E AR=0.6mJ 300 V W V(BR)DSS 680 PAR 660 640 200 150 620 600 580 50 560 540 -60 04 10 5 6 100 -20 20 60 100 °C 180 10 Hz f 10 Tj 15 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 16 Typ. Coss stored energy Eoss=f(VDS) 7.5 pF Ciss 10 3 µJ 6 5.5 Eoss 10 2 5 4.5 4 C Coss 3.5 3 2.5 10 1 Crss 2 1.5 1 0.5 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Rev. 2.4 Page 8 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW11N60S5 Definition of diodes switching characteristics Rev. 2.4 Page 9 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A 1 6 S5 G Rev. 2.4 P 8 2 11 Please note the new package dimensions arccording to PCN 2009-134-A 1 6 S5 Rev. 2.4 Page 11 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A Data sheet erratum PCN 2009-134-A New package outlines TO-247 1 New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Rev. 2.0, 2010-02-01 Final Data Sheet Erratum