SPW17N80C2

Preliminary data SPW17N80C2 Cool MOS™ Power Transistor Feature · · · · · · C OLMOS O Power Semiconductors New revolutionary high voltage technology Worldwide best RDS(on) in TO 247 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Product Summary VDS R DS(on) ID 800 290 17 P-TO247 V mW A Type SPW17N80C2 Package P-TO247 Ordering Code Q67040-S4359 Marking SPW17N80C2 Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol Value 17 11 51 670 0.5 17 6 ±20 208 -55... +150 Unit A ID Pulsed drain current, tp limited by T jmax Avalanche energy, single pulse ID=4A, V DD=50V ID puls EAS EAR IAR dv/dt mJ Avalanche energy, repetitive t AR limited by Tjmax1) ID=17A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS=17A, V DS < V DD, di/dt=100A/µs, T jmax=150°C A V/ns V W °C Gate source voltage Power dissipation TC = 25 °C VGS Ptot Tj , Tstg Page 1 Operating and storage temperature 2000-05-29 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Symbol min. SPW17N80C2 Values typ. max. 0.6 62 Unit RthJC RthJA - K/W Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s - - 1.67 260 W/K °C T sold - Electrical Characteristics , at T j = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V GS=0V, ID=0.25mA V(BR)DSS V(BR)DS VGS(th) I DSS 800 2 870 3 4 V Drain-source avalanche breakdown voltage V GS=0V, ID=17A Gate threshold voltage, VGS = VDS ID=1mA Zero gate voltage drain current V DS = 800 V, V GS = 0 V, T j = 25 °C V DS = 800 V, V GS = 0 V, T j = 150 °C µA 0.5 250 0.7 25 250 100 290 nA mW Gate-source leakage current V GS=20V, V DS=0V I GSS RDS(on) RG Drain-source on-state resistance V GS=10V, I D=11A, Tj=25°C Gate input resistance W f = 1 MHz, open drain 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV Page 2 2000-05-29 Preliminary data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 2) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage SPW17N80C2 Symbol Conditions min. Values typ. 15 2320 1250 60 59 124 45 17 77 10 max. 88 13 Unit g fs Ciss Coss Crss V DS³2*ID*R DS(on)max , ID=11A V GS=0V, VDS=25V, f=1MHz - S pF Effective output capacitance, 1) Co(er) V GS=0V, V DS=0V to 640 V pF t d(on) tr t d(off) tf Q gs Q gd Qg V DD=400V, VGS=0/10V, ID=17A, R G=5.6W, T j=125°C - ns VDD=640V, ID=17A - 9 42 83 6 107 - nC VDD=640V, ID=17A, VGS=0 to 10V V(plateau) VDD=640V, ID=17A V 1C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 2C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . o(tr) oss DS DSS Page 3 2000-05-29 Preliminary data Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Symbol Conditions min. SPW17N80C2 Values typ. 1 550 13 40 1200 max. 17 51 1.2 - Unit IS I SM VSD t rr Q rr TC=25°C - A VGS=0V, IF=IS VR=400V, I F=I S , diF/dt=100A/µs - V ns µC A A/µs Peak reverse recovery current I rrm Peak rate of fall of reverse di rr/dt recovery current Transient Thermal Characteristics Symbol Value typ. Transient thermal impedance Thermal resistance Unit Symbol Value typ. Unit Thermal capacitance 0.00716 0.01 0.022 0.065 0.083 0.038 K/W Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.000441 0.0014 0.000985 0.0045 0.02 0.146 Ws/K Tj P tot ( t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2000-05-29 Preliminary data 1 Power dissipation 2 Drain current SPW17N80C2 Ptot = f (TC) SPW17N80C2 ID = f (TC ) parameter: VGS ³ 10 V SPW17N80C2 240 18 W 200 180 A 14 12 Ptot 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 ID 10 8 6 4 2 0 0 °C 160 20 40 60 80 100 120 °C 160 TC TC 3 Safe operating area 4 Transient thermal impedance I D = f ( V DS ) parameter : D = 0 , T C=25°C 10 2 ZthJC = f (tp ) parameter : D = tp /T 10 1 tp = 6.7 µs SPW17N80C2 SPW17N80C2 K/W 10 0 A /I D 10 µs V DS 10 1 Z thJC 100 µs 10 -1 ID R DS ( on ) = 10 -2 D = 0.50 0.20 10 0 1 ms 10 -3 0.10 0.05 10 ms 10 -4 DC 10 -1 0 10 10 -5 -7 10 single pulse 0.02 0.01 10 1 10 2 V 10 3 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 5 tp 2000-05-29 Preliminary data 5 Typ. output characteristic SPW17N80C2 6 Typ. output characteristic I D = f (VDS); T j=25°C parameter: tp = 10 µs, V GS 70 ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 35 A 60 55 50 25 8V 20V 10V A 20V 10V 8V 7V 6.5V 6V ID ID 20 45 40 35 30 25 20 15 10 5 0 0 5 10 15 7V 5.5V 15 6V 10 5V 4.5V 5V 5 4V 20 VDS V 30 0 0 5 10 15 20 VDS V 30 7 Typ. drain-source on resistance 8 Drain-source on-state resistance RDS(on)=f(ID) parameter: Tj=150°C, V GS 1.5 RDS(on) = f (Tj ) parameter : ID = 11 A, VGS = 10 V SPW17N80C2 1.6 A 1.3 1.2 W RDS(on) 6.5V 1.2 ID 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 4V 4.5V 5V 5.5V 6V 1.0 0.8 0.6 7V 8V 10V 20V 0.4 98% typ 0.2 5 10 15 20 25 VDS V 35 0.0 -60 -20 20 60 100 °C 180 Tj Page 6 2000-05-29 Preliminary data 9 Typ. transfer characteristics SPW17N80C2 10 Gate threshold voltage I D= f ( VGS ); V DS³ 2 x ID x R DS(on)max parameter: tp = 10 µs 65 VGS(th) = f (Tj) parameter: VGS = VDS , ID = 1 mA 5.0 A 25°C V 4.0 55 50 V GS(th) 45 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 max. ID 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 150°C typ. min. V 20 VGS -20 20 60 100 °C 160 Tj 11 Typ. gate charge 12 Forward characteristics of body diode VGS = f (Q Gate) parameter: ID = 17 A pulsed SPW17N80C2 IF = f (VSD ) parameter: Tj , tp = 10 µs 10 2 SPW17N80C2 16 V A 12 VGS 0,2 VDS max 10 10 1 8 6 IF 10 0 0,8 VDS max Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -1 0.0 2 0 0 20 40 60 80 100 nC 140 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 Q Gate Page 7 VSD 2000-05-29 Preliminary data 13 Avalanche SOA 14 Avalanche energy SPW17N80C2 I AR = f (tAR) par.: Tj £ 150 °C 18 EAS = f (Tj ) par.: ID = 4 A, VDD = 50 V 700 A 14 12 10 8 6 T j(START) =25°C mJ 600 550 E AS Tj (START) =125°C 500 450 400 350 300 250 200 150 100 50 IAR 4 2 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 4 0 25 50 75 100 °C 150 Tj 15 Drain-source breakdown voltage 16 Avalanche power losses V(BR)DSS = f (Tj) SPW17N80C2 PAR = f (f ) parameter: EAR =0.5mJ 500 980 V 940 W 400 350 300 250 V(BR)DSS 920 880 860 840 820 800 780 760 740 720 -60 -20 20 60 100 P AR 900 200 150 100 50 04 10 5 6 °C 180 10 MHz 10 Tj Page 8 f 2000-05-29 Preliminary data 17 Typ. capacitances SPW17N80C2 18 Typ. Coss stored energy C = f (VDS) parameter: V GS=0V, f=1 MHz 10 5 Eoss=f(VDS ) 18 pF 10 4 µJ 14 Ciss E oss Coss Crss 100 200 300 400 500 600 12 10 8 6 10 3 C 10 2 10 1 4 2 10 0 0 V 800 VDS 0 0 100 200 300 400 500 600 V 800 VDS Definition of diodes switching characteristics Page 9 2000-05-29 Preliminary data TO-247 SPW17N80C2 dimensions symbol min A B C D E F G H K L M N ∅P Q 4.78 2.29 1.78 1.09 1.73 2.67 [mm] max 5.28 2.51 2.29 1.32 2.06 3.18 min 0.1882 0.0902 0.0701 0.0429 0.0681 0.1051 [inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252 0.76 max 20.80 21.16 15.65 5.21 19.81 3.560 3.61 6.12 6.22 16.15 5.72 20.68 4.930 0.0299 max 0.8189 0.8331 0.6161 0.2051 0.7799 0.1402 0.6358 0.2252 0.8142 0.1941 0.1421 0.2409 0.2449 Page 10 2000-05-29 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. SPW17N80C2 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 2000-05-29