SPW17N80C3

SPW17N80C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ 800 0.29 88 V Ω nC PG-TO247-3 CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application (i.e. active clamp forward) Type SPW17N80C3 Package PG-TO247-3 Marking 17N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0…640 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque Rev. 2.9 P tot T j, T stg M2.5 screws page 1 T C=25 °C T C=25 °C I D=3.4 A, V DD=50 V I D=17 A, V DD=50 V Value 17 11 51 670 0.5 17 50 ±20 ±30 227 -55 ... 150 50 W °C Ncm 2008-10-15 A V/ns V mJ Unit A Please note the new package dimensions arccording to PCN 2009-134-A SPW17N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 17 51 4 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10s 0.55 62 K/W Soldering temperature, T sold wave soldering only allowed at leads - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 µA V (BR)DS V GS(th) I DSS V GS=0 V, I D=17 A V DS=V GS, I D=1.0 mA V DS=800 V, V GS=0 V, T j=25 °C V DS=800 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=11 A, T j=25 °C V GS=10 V, I D=11 A, T j=150 °C Gate resistance RG f =1 MHz, open drain 800 2.1 870 3 3.9 25 µA V - 150 0.25 100 0.29 nA Ω - 0.67 0.85 Ω Rev. 2.9 page 2 2008-10-15 Please note the new package dimensions arccording to PCN 2009-134-A SPW17N80C3 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance C iss C oss V GS=0 V, V DS=100 V, f =1 MHz 2300 94 72 pF Values typ. max. Unit Effective output capacitance, energy C o(er) related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) 2) 3) 4) 5) 6) V GS=0 V, V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=17 A, R G=4.7 ? ,T j=25 °C - 210 25 15 72 12 ns Q gs Q gd Qg V plateau V DD=640 V, I D=17 A, V GS=0 to 10 V - 12 45 88 5.5 117 - nC V V SD t rr Q rr I rrm V GS=0 V, I F=I S=17 A, T j=25 °C V R=400 V, I F=I S=17 A, di F/dt =100 A/µs - 1 550 15 51 1.2 - V ns µC A J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISD=ID, di/dt=200A/µs, VDClink = 400V, Vpeak