SPW32N50C3_08

SPW32N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS @ Tjmax RDS(on) ID 560 0.11 32 PG-TO247 V Ω A Type SPW32N50C3 Package PG-TO247 Ordering Code Q67040-S4613 Marking 32N50C3 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TC = 25 °C TC = 100 °C A 32 20 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 10 A, VDD = 50 V I D puls EAS 96 1100 1 20 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C V/ns VGS Ptot T j , T stg dv/dt 284 -55... +150 15 Operating and storage temperature Reverse diode dv/dt 4) Rev. 2.5 Page 1 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW32N50C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 400 V, ID = 32 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=20A breakdown voltage Gate threshold voltage Zero gate voltage drain current 500 2.1 Values typ. 600 3 0.5 0.09 0.27 0.8 max. 3.9 µA 25 250 100 0.11 nA Ω Symbol min. RthJC RthJA - Values typ. max. 0.44 62 260 Unit K/W °C Tsold Unit V VGS(th) I DSS ID=1800µΑ, VGS=VDS V DS=500V, VGS=0V, Tj=25°C, Tj=150°C Gate-source leakage current I GSS V GS=20V, VDS=0V V GS=10V, ID=20A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Rev. 2.5 Page 2 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW32N50C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol g fs Ciss Coss Crss Conditions min. V DS≥2*I D*RDS(on)max, ID=20A Values typ. 30 4200 1700 90 181 350 20 30 100 10 max. - Unit S pF V GS=0V, V DS=25V, f=1MHz Effective output capacitance, 2) Co(er) energy related Effective output capacitance, 3) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time V GS=0V, V DS=0V to 400V pF td(on) tr td(off) tf V DD=380V, V GS=0/10V, ID=32A, RG=2.7Ω - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg VDD=380V, ID=32A - 15 90 170 5 - nC VDD=380V, ID=32A, VGS=0 to 10V V(plateau) VDD=380V, ID=32A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. 4I