SPW35N60C3_05

SPW35N60C3 CoolMOS Features TM Power Transistor Product Summary V DS @ T j,max R DS(on),max ID 650 0.1 34.6 V Ω A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances • Improved transconductance PG-TO247 Type SPW35N60C3 Package PG-TO247 Ordering Code Q67040-S4673 Marking 35N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1) Drain source voltage slope Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V GS Power dissipation Operating and storage temperature Reverse diode dv/dt 6) Rev. 2.4 P tot T j, T stg dv/dt Page 1 I D=34.6 A, V DS=480 V, T j=125 °C static AC (f >1 Hz) T C=25 °C T C=25 °C I D=17.3 A, V DD=50 V I D=34.6 A, V DD=50 V Value 34.6 21.9 103.8 1500 1.5 34.6 50 ±20 ±30 313 -55 ... 150 15 W °C V/ns 2005-09-21 A V/ns V mJ Unit A SPW35N60C3 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 0.4 62 K/W Values typ. max. Unit Soldering temperature, wavesoldering T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V (BR)DS V GS(th) V GS=0 V, I D=34.6 A V DS=V GS, I D=1.9 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=21.9 A, T j=25 °C V GS=10 V, I D=21.9 A, T j=150 °C Gate resistance Transconductance RG g fs f =1 MHz, open drain |V DS|>2|I D|R DS(on)max, I D=21.9 A 600 2.1 700 3 3.9 V Zero gate voltage drain current I DSS - 0.1 1 µA - 0.081 100 100 0.1 nA Ω - 0.2 0.6 36 S Rev. 2.4 Page 2 2005-09-21 SPW35N60C3 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance C iss C oss C rss V GS=0 V, V DS=25 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V V DD=480 V, V GS=10 V, I D=34.6 A, R G=3.3 Ω 324 10 5 70 10 ns 4500 1500 100 180 pF Values typ. max. Unit Effective output capacitance, energy C o(er) related3) Effective output capacitance, time related4) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage 1) C o(tr) t d(on) tr t d(off) tf Q gs Q gd Qg V plateau V DD=480 V, I D=34.6 A, V GS=0 to 10 V - 18 70 150 5.3 200 - nC V Pulse width limited by maximum temperature T j,max only Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 2) 3) 4) 6) ISD