SPW35N60CFD_08

SPW35N60CFD CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic avalanche rated • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID 600 V 0.118 Ω 34 A PG-TO247 Type SPW35N60CFD Package PG-TO247 Ordering Code Q67045A5053 Marking 35N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) Drain source voltage slope Reverse diode d v /dt Maximum diode commutation speed Gate source voltage I D,pulse E AS E AR I AR dv /dt dv /dt di /dt V GS I D=34.1 A, V DS=480 V, T j=125 °C I S=34.1 A, V DS=480 V, T j=125 °C static AC (f >1 Hz) Power dissipation Operating and storage temperature Rev. 1.3 P tot T j, T stg page 1 T C=25 °C T C=25 °C I D=10 A, V DD=50 V I D=20 A, V DD=50 V Value 34.1 21.6 85 1300 1 20 80 40 600 ±20 ±30 313 -55 ... 150 W °C 2008-04-17 A V/ns V/ns A/µs V mJ Unit A Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 0.4 62 K/W Values typ. max. Unit Soldering temperature, wave soldering T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V (BR)DS V GS(th) V GS=0 V, I D=34.1 A V DS=V GS, I D=1.9 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=21.6 A, T j=25 °C V GS=10 V, I D=21.6 A, T j=150 °C Gate resistance Transconductance RG g fs f =1 MHz, open drain |V DS|>2|I D|R DS(on)max, I D=21.6 A 600 3 700 4 5 V Zero gate voltage drain current I DSS - 4 - µA - 3300 0.10 100 0.118 nA Ω - 0.23 0.6 21 S Rev. 1.3 page 2 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related4) Effective output capacitance, time related5) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage 1) Values typ. max. Unit C iss C oss C rss C o(er) V GS=0 V, V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=34.1 A, R G=3.3 Ω V GS=0 V, V DS=25 V, f =1 MHz - 5060 1400 52 162 - pF - 299 20 25 65 12 ns Q gs Q gd Qg V plateau V DD=480 V, I D=34.1 A, V GS=0 to 10 V - 36 87 163 7.2 212 - nC V J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 2) 3) 4) 5) Rev. 1.3 page 3 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD Parameter Symbol Conditions min. Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current IS I S,pulse V SD t rr Q rr I rrm V R=480 V, I F=I S, di F/dt =100 A/µs T C=25 °C V GS=0 V, I F=34.1 A, T j=25 °C 1.0 180 1.5 16 34.1 85 1.2 V ns µC A A Values typ. max. Unit Typical Transient Thermal Characteristics Symbol Value typ. R th1 R th2 R th3 R th4 R th5 0.00441 0.00608 0.0341 0.0602 0.0884 K/W C th1 C th2 C th3 C th4 C th5 C th6 Unit Symbol Value typ. 0.00037 0.00223 0.00315 0.0179 0.098 4.45) Ws/K Unit 5) C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if R thCA=0 K/W. Rev. 1.3 page 4 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 400 102 limited by on-state resistance 10 µs 1 µs 100 µs 300 101 DC 1 ms P tot [W] 200 I D [A] 10 ms 100 100 0 0 40 80 120 160 10-1 100 101 102 103 T C [°C] V DS [V] 3 Max. transient thermal impedance I D=f(V DS); T j=25 °C parameter: D=t p/T 100 4 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 90 20 V 10 V 0.5 75 10-1 8V 0.2 60 Z thJC [K/W] I D [A] 0.1 45 0.05 10-2 0.02 0.01 single pulse 7V 30 6.5 V 15 6V 5.5 V 10 -3 0 -6 5V 10 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0 5 10 15 20 t p [s] V DS [V] Rev. 1.3 page 5 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD 5 Typ. output characteristics I D=f(V DS); T j=150 °C parameter: V GS 60 20 V 10 V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 °C parameter: V GS 0.5 50 8V 0.4 40 7V R DS(on) [Ω ] 0.3 5V 5.5 V 6V 6.5 V 7V I D [A] 30 6.5 V 0.2 20 V 20 6V 10 5.5 V 5V 0.1 0 0 5 10 15 20 0 0 10 20 30 40 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=21.9 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.3 150 0.25 120 C °25 0.2 R DS(on) [Ω ] 90 0.15 98 % I D [A] 60 typ C °150 0.1 0.05 30 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 T j [°C] V GS [V] Rev. 1.3 page 6 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD 9 Typ. gate charge V GS=f(Q gate); I D=34.1 A pulsed parameter: V DD 12 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 120 V 25 °C, 98% 150 °C, 98% 10 25 °C 480 V 150 °C 8 101 V GS [V] 6 4 I F [A] 100 10-1 2 0 0 50 100 150 200 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche SOA I AR=f(t AR) parameter: T j(start) 25 12 Avalanche energy E AS=f(T j); I D=10 A; V DD=50 V 1400 1200 20 1000 15 E AS [mJ] 125 °C 25 °C I AV [A] 800 10 600 400 5 200 0 10-3 10-2 10-1 100 101 102 103 0 20 60 100 140 180 t AR [µs] T j [°C] Rev. 1.3 page 7 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD 13 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=10 mA 14 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 700 105 660 104 Ciss V BR(DSS) [V] C [pF] 620 103 Coss 580 102 Crss 540 -60 -20 20 60 100 140 180 101 0 100 200 300 400 500 T j [°C] V DS [V] 15 Typ. C oss stored energy E oss= f(V DS) 16 Typ. reverse recovery charge Q rr=f(T j); I S=34.1 A; di /dt =100 A/µs 30 3 2.8 25 2.6 20 2.4 E oss [µJ] 15 Q rr [µC] 0 100 200 300 400 500 600 2.2 2 10 1.8 5 1.6 0 1.4 25 50 75 100 125 150 V DS [V] T j [°C] Rev. 1.3 page 8 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD 17 Typ. reverse recovery charge Q rr=f(I S); di/ dt =100 A/µs parameter: T j 3 18 Typ. reverse recovery charge Q rr=f(di /dt ); I S=34.1 A parameter: T j 7 2.5 6 125 °C 5 2 125 °C Q rr [µC] 1.5 Q rr [µC] 4 3 25 °C 25 °C 1 2 0.5 1 0 0 5 10 15 20 25 30 35 0 0 300 600 900 I S [A] di/ dt [A/µs] Rev. 1.3 page 9 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD Definition of diode switching characteristics Rev. 1.3 page 10 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD PG-TO247-3-21-41 Rev. 1.3 page 11 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD Rev. 1.3 page 12 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A Data sheet erratum PCN 2009-134-A New package outlines TO-247 1 New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Rev. 2.0, 2010-02-01 Final Data Sheet Erratum