SPW47N60S5

Final data SPW47N60S5 VDS RDS(on) ID 600 0.07 47 P-TO247 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 V Ω A • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type SPW47N60S5 Package P-TO247 Ordering Code Q67040-S4240 Marking 47N60S5 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TC = 25 °C TC = 100 °C A 47 30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 10 A, VDD = 50 V I D puls EAS 94 1800 1 20 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature VGS Ptot T j , T stg A V W °C 415 -55... +150 Page 1 2003-07-02 Final data Maximum Ratings Parameter Symbol SPW47N60S5 Value Unit Drain Source voltage slope V DS = 480 V, ID = 47 A, Tj = 125 °C dv/dt 20 V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=20A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=2700µΑ, VGS=V DS V DS=600V, VGS=0V, Tj=25°C, Tj=150°C Symbol min. RthJC RthJA Tsold Values typ. 45 max. 0.3 260 - Unit K/W °C Values typ. 700 4.5 0.5 0.06 0.16 8.7 max. 5.5 600 3.5 - Unit V µA 25 250 100 0.07 nA Ω Gate-source leakage current I GSS V GS=20V, VDS=0V V GS=10V, ID=30A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Page 2 2003-07-02 Final data SPW47N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD=-V, ID =47A, VGS=0 to 10V VDD=-V, ID =47A Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Conditions min. VDS≥2*ID*RDS(on)max, ID=30A VGS=0V, VDS=25V, f=1MHz Values typ. 30 7600 2900 27 360 30 200 30 max. 300 45 - Unit S pF VDD=-V, VGS=0/10V, ID=47A, RG=1.3Ω ns - 56 123 220 8 286 - nC V(plateau) VDD=-V, ID =47A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV Page 3 2003-07-02 Final data SPW47N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IF=IS VR=-V, IF=IS , diF/dt=100A/µs Symbol IS ISM Conditions min. TC=25°C Values typ. 1 650 24 max. 47 94 1.2 1100 - Unit A V ns µC Typical Transient Thermal Characteristics Symbol Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.002689 0.005407 0.011 0.054 0.071 0.036 K/W Value typ. Unit Symbol Value typ. Unit Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.001081 0.004021 0.005415 0.014 0.025 0.158 Ws/K Tj P tot ( t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2003-07-02 Final data SPW47N60S5 1 Power dissipation Ptot = f (TC) 500 SPW47N60S5 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25°C 10 2 W 400 350 A 10 1 Ptot 300 250 200 150 100 50 0 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 20 40 60 80 100 120 °C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 220 4 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 110 A 180 160 A 20V 15V 12V 11V 90 80 20V 12V 10V 9V 8.5V ID 120 100 80 60 40 20 0 0 5 10 15 7V 8V 9V ID 140 10V 70 60 50 40 30 20 10 8V 7.5V 7V 6.5V 6V V VDS 25 0 0 5 10 15 V VDS 25 Page 5 2003-07-02 Final data SPW47N60S5 5 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0.5 6 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 30 A, VGS = 10 V 0.38 SPW47N60S5 mΩ 0.35 9V RDS(on) 20V RDS(on) 0.4 6V 6.5V 7V 7.5V 8V 8.5V Ω 0.32 0.28 0.24 0.2 0.3 10V 12V 0.16 0.12 0.08 98% typ 0.25 0.2 0.15 0.04 0 -60 0.1 0 20 40 60 80 A ID 110 -20 20 60 100 °C 180 Tj 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 220 A 8 Typ. gate charge VGS = f (Q Gate) parameter: ID = 47 A pulsed 16 V 0.2 VDS max SPW47N60S5 180 160 12 0.8 VDS max ID 140 120 VGS V 10 8 100 80 60 40 20 0 0 2 4 6 8 10 12 14 18 2 6 4 0 0 40 80 120 160 200 240 280 nC 360 VGS Page 6 Q Gate 2003-07-02 Final data SPW47N60S5 9 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 10 2 SPW47N60S5 10 Avalanche SOA IAR = f (tAR) par.: Tj ≤ 150 °C 20 A A IAR 10 Tj(START)=25°C 10 1 IF 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 5 Tj(START)=125°C 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 VSD 4 µs 10 tAR 11 Avalanche energy EAS = f (Tj) par.: ID = 10 A, VDD = 50 V 2000 12 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPW47N60S5 mJ 1600 1400 V V(BR)DSS °C 680 660 640 EAS 1200 1000 620 800 600 400 200 0 20 600 580 560 540 -60 40 60 80 100 120 160 -20 20 60 100 °C 180 Tj Page 7 Tj 2003-07-02 Final data SPW47N60S5 13 Avalanche power losses PAR = f (f ) parameter: E AR=1mJ 500 14 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 5 pf W 10 4 Ciss PAR 300 C 10 3 Coss 200 10 2 Crss 100 10 1 04 10 10 5 Hz f 10 6 10 0 0 10 20 30 40 50 60 70 80 V 100 VDS 15 Typ. Coss stored energy Eoss=f(VDS) 40 µJ 30 Eoss 25 20 15 10 5 0 0 100 200 300 400 V 600 VDS Page 8 2003-07-02 Final data SPW47N60S5 Definition of diodes switching characteristics Page 9 2003-07-02 Final data SPW47N60S5 P-TO-247-3-1 15.9 6.35 ø3.61 5.03 2.03 4.37 20.9 9.91 6.17 D 7 D 1.75 1.14 0.243 1.2 2 2.92 5.46 16 0.762 MAX. 2.4 +0.05 General tolerance unless otherwise specified: Leadframe parts: ±0.05 Package parts: ±0.12 41.22 2.97 x 0.127 5˚ 5.94 20˚ Page 10 2003-07-02 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. SPW47N60S5 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 2003-07-02