SPW47N65C3

SPW47N65C3 CoolMOSTM Power Transistor Features • Worldwide best R ds,on in TO247 • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ 650 0.07 255 V Ω nC PG-TO247-3-1 Type SPW47N65C3 Package PG-TO247-3-1 Marking 47N65C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque P tot T j, T stg M3 and M3.5 screws T C=25 °C T C=25 °C I D=3.5 A, V DD=50 V I D=7 A, V DD=50 V Value 47 30 141 1800 1 7 50 ±20 ±30 415 -55 ... 150 60 W °C Ncm A V/ns V mJ Unit A Rev. 1.2 page 1 2008-02-12 Please note the new package dimensions arccording to PCN 2009-134-A SPW47N65C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Symbol Conditions IS I S,pulse T C=25 °C Value 47 141 Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA T sold leaded 1.6 mm (0.063 in.) from case for 10 s - - 0.3 62 K/W - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I DSS V DS=V GS, I D=2.7 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=30 A, T j=25 °C V GS=10 V, I D=30 A, T j=150 °C Gate resistance RG f =1 MHz, open drain 650 2.1 3 3.9 V Zero gate voltage drain current - 0.5 25 µA - 50 0.06 100 0.07 nA Ω - 0.17 0.75 Ω Rev. 1.2 page 2 2008-02-12 Please note the new package dimensions arccording to PCN 2009-134-A SPW47N65C3 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current V SD t rr Q rr I rrm V R=480 V, I F=I S, di F/dt =100 A/µs V GS=0 V, I F=47 A, T j=25 °C 0.9 640 19 56 1.2 V ns µC A Q gs Q gd Qg V plateau V DD=480 V, I D=47 A, V GS=0 to 10 V 35 120 255 5.5 V nC C iss C oss C o(er) V GS=0 V, V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=47 A, R G=5.6 Ω 490 100 27 210 14 ns V GS=0 V, V DS=25 V, f =1 MHz 7000 2300 270 pF Values typ. max. Unit 1) J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 2) 3) 5) 6) Rev. 1.2 page 3 2008-02-12 Please note the new package dimensions arccording to PCN 2009-134-A SPW47N65C3 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 500 103 limited by on-state resistance 400 102 1 µs 10 µs 100 µs 300 P tot [W] I D [A] 1 ms 101 10 ms DC 200 100 100 0 0 40 80 120 160 10-1 100 101 102 103 T C [°C] V DS [V] 4 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 200 20 V 7V 6.5 V 3 Max. transient thermal impedance Z(thJC)=f(tp) parameter: D=t p/T 100 0.5 150 10-1 0.2 Z thJC [K/W] 6V I D [A] 0.1 0.05 0.02 100 5.5 V 10 -2 0.01 single pulse 50 5V 5V 4.5 V 10-3 10-5 10-4 10-3 10-2 10-1 100 0 0 5 10 15 20 25 t p [s] V DS [V] Rev. 1.2 page 4 2008-02-12 Please note the new package dimensions arccording to PCN 2009-134-A SPW47N65C3 5 Typ. output characteristics I D=f(V DS); T j=150 °C parameter: V GS 120 20 V 20 V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 °C parameter: V GS 100 10 V 0.7 6.5 V 7V 6.5 V 6V 80 6V 5.5 V R DS(on) [Ω ] 0.5 5V 5.5 V I D [A] 60 5V 4.5 V 4V 40 0.3 4.5 V 20 0 0 5 10 15 20 25 0.1 0 40 80 120 160 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.2 200 25°C 0.16 150 R DS(on) [Ω ] 0.12 I D [A] 98 % 100 150°C 0.08 typ 50 0.04 0 -50 0 50 100 150 0 0 2 4 6 8 10 T j [°C] V GS [V] Rev. 1.2 page 5 2008-02-12 Please note the new package dimensions arccording to PCN 2009-134-A SPW47N65C3 9 Typ. gate charge V GS=f(Q gate); I D=47 A pulsed parameter: V DD 10 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 120 V 8 480 V 102 150 °C 6 V GS [V] I F [A] 25 °C 4 101 150 °C, 98% 2 25 °C, 98% 0 0 40 80 120 160 200 240 100 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche energy E AS=f(T j); I D=3.5 A; V DD=50 V 12 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=0.25 mA 2000 1800 710 1600 1400 680 1000 800 600 400 200 0 25 50 75 100 125 150 175 V BR(DSS) [V] 1200 E AS [mJ] 650 620 590 -60 -20 20 60 100 140 180 T j [°C] T j [°C] Rev. 1.2 page 6 2008-02-12 Please note the new package dimensions arccording to PCN 2009-134-A SPW47N65C3 13 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 14 Typ. Coss stored energy E oss= f(V DS) 105 50 104 Ciss 40 Coss 102 Crss E oss [µJ] 20 10 0 103 30 C [pF] 101 100 0 100 200 300 400 500 0 200 400 600 V DS [V] V DS [V] Rev. 1.2 page 7 2008-02-12 Please note the new package dimensions arccording to PCN 2009-134-A SPW47N65C3 Definition of diode switching characteristics Rev. 1.2 page 8 2008-02-12 Please note the new package dimensions arccording to PCN 2009-134-A SPW47N65C3 PG-TO-247-3-1: Outlines Rev. 1.2 page 9 2008-02-12 Please note the new package dimensions arccording to PCN 2009-134-A SPW47N65C3 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be . expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 10 2008-02-12 Please note the new package dimensions arccording to PCN 2009-134-A Data sheet erratum PCN 2009-134-A New package outlines TO-247 1 New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Rev. 2.0, 2010-02-01 Final Data Sheet Erratum