SPW52N50C3_08

SPW52N50C3 CoolMOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS @ Tjmax RDS(on) ID 560 0.07 52 PG-TO247 V Ω A Type SPW52N50C3 Maximum Ratings Parameter Package PG-TO247 Marking 52N50C3 Symbol ID Value Unit Continuous drain current TC = 25 °C TC = 100 °C A 52 30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 10 A, VDD = 50 V I D puls EAS 156 1800 1 20 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS VGS Ptot T j , T stg dv/dt A V W °C V/ns Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C 417 -55... +150 15 Operating and storage temperature Reverse diode dv/dt 4) Rev. 2.6 Page 1 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW52N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 400 V, ID = 52 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Symbol min. RthJC RthJA Tsold Values typ. max. 0.3 62 260 - Unit K/W °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=2700μΑ, VGS=VDS VDS=500V, VGS=0V, Tj=25°C, Tj=150°C Values typ. 600 3 0.5 0.06 0.16 0.7 max. 3.9 500 2.1 - Unit V V(BR)DS VGS=0V, ID=20A μA 25 250 100 0.07 nA Ω Gate-source leakage current IGSS VGS=20V, VDS=0V VGS=10V, ID=30A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Rev. 2.6 Page 2 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW52N50C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol g fs Ciss Coss Crss Conditions min. V DS≥2*I D*RDS(on)max, ID=30A Values typ. 40 6800 2200 150 212 469 20 30 120 10 max. - Unit S pF V GS=0V, V DS=25V, f=1MHz Effective output capacitance, 2) Co(er) energy related Effective output capacitance, 3) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time V GS=0V, V DS=0V to 400V pF td(on) tr td(off) tf V DD=380V, V GS=0/10V, ID=52A, RG =1.8Ω - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg VDD=380V, ID=52A - 30 160 290 5 - nC VDD=380V, ID=52A, VGS=0 to 10V V(plateau) VDD=380V, ID=52A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. 4I