SS98

BSS 98 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...1.6 V Pin 1 S Type Pin 2 G Marking Pin 3 D VDS 50 V ID 0.3 A RDS(on) 3.5 Ω Package BSS 98 Type BSS 98 BSS 98 BSS 98 TO-92 SS98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 Tape and Reel Information E6288 E6296 E6325 Maximum Ratings Parameter Symbol Values Unit Drain source voltage Drain-gate voltage RGS = 20 kΩ VDS V DGR 50 V 50 VGS Gate source voltage ESD Sensitivity as per MIL-STD 883 Continuous drain current TA = 25 ˚C ± 20 Class 1 A 0.3 ID DC drain current, pulsed TA = 25 ˚C IDpuls 1.2 Ptot Power dissipation TA = 25 ˚C W 0.63 Data Sheet 1 05.99 BSS 98 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 200 E 55 / 150 / 56 K/W Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 50 - Gate threshold voltage VGS=V DS, ID = 1 mA V GS(th) 0.8 IDSS 1.2 1.6 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 ˚C VDS = 50 V, VGS = 0 V, Tj = 125 ˚C VDS = 30 V, VGS = 0 V, Tj = 25 ˚C IGSS 0.05 - 0.5 5 100 µA nA nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-state resistance VGS = 10 V, ID = 0.3 A VGS = 4.5 V, ID = 0.3 A Ω 1.8 2.8 3.5 6 Data Sheet 2 05.99 BSS 98 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 0.3 A gfs S 0.12 0.23 pF 40 55 Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 15 25 Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz td(on) 5 8 ns Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω tr 5 8 Rise time VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω td(off) 6 9 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω tf 12 16 Fall time VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω - 15 20 Data Sheet 3 05.99 BSS 98 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TA = 25 ˚C IS A 0.3 Inverse diode direct current,pulsed TA = 25 ˚C ISM V SD - 1.2 V Inverse diode forward voltage VGS = 0 V, IF = 0.6 A - 1 1.4 Data Sheet 4 05.99 BSS 98 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0.32 0.70 W 0.60 A Ptot 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 ID 0.24 0.20 0.16 0.12 0.08 0.15 0.10 0.05 0.00 0 20 40 60 80 100 120 ˚C 160 0.04 0.00 0 20 40 60 80 100 120 ˚C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25˚C Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 60 V 58 V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 5 05.99 BSS 98 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 ˚C 0.70 A 0.60 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C 11 Ptot = 1W lk i h j g VGS [V] a 2.0 Ω RDS (on) 9 8 7 6 5 4 3 2 b ab c d e f ID 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 c e f b c d e f g h 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 di j k l g h i kl j 0.15 0.10 0.05 0.00 a VGS [V] = 1 0 V 5.0 0.00 a 2.0 b 2.5 c 3.0 d 3.5 e f 4.0 4.5 g 5.0 h i 6.0 7.0 j 8.0 k l 9.0 10.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.10 0.20 0.30 0.40 A 0.60 VDS ID Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max 0.65 A 0.55 ID parameter: tp = 80 µs, V DS≥2 x ID x RDS(on)max 0.30 S 0.26 gfs 0.50 0.45 0.24 0.22 0.20 0.40 0.35 0.30 0.25 0.20 0.15 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.10 0.05 0.00 0 1 2 3 4 5 6 7 8 V VGS 0.04 0.02 0.00 10 0.00 0.10 0.20 0.30 0.40 A ID 0.55 Data Sheet 6 05.99 BSS 98 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.3 A, VGS = 10 V 9 Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 2.6 V 2.2 Ω RDS (on) 7 6 5 VGS(th) 2.0 1.8 1.6 1.4 98% 98% 4 3 1.2 1.0 0.8 typ 2% typ 2 1 0.2 0 -60 -20 20 60 100 ˚C 160 0.0 -60 -20 20 60 100 ˚C 160 0.6 0.4 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 1 pF C A IF 10 2 10 0 Ciss 10 1 Coss 10 -1 Tj = 25 ˚C typ Crss Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 0 0 5 10 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99