TLE4209

DC Motor Driver for Servo Driver Applications TLE 4209 1 1.1 Overview Features • Optimized for headlight beam control applications • Delivers up to 0.8 A • Low saturation voltage; typ. 1.2 V total @ 25 °C; 0.4 A • Output protected against short circuit • Overtemperature protection with hysteresis • Over- and undervoltage lockout • No crossover current • Internal clamp diodes 1.2 Description The TLE 4209 is a fully protected H-Bridge Driver designed specifically for automotive headlight beam control and industrial servo control applications. The part is built using Infineons bipolar high voltage power technology DOPL. The device is available in a P-DIP-8-4 package. The servo-loop-parameter pos.- and neg. Hysteresis, pos.- and neg. deadband and angle-amplification are programmable with external resitors. An internal window-comparator controls the input line. In the case of a fault condition, like short circuit to GND, short circuit to supply-voltage, and broken wire, the TLE 4209 stops the motor immediately (brake condition). Furthermore the built in features like over- and undervoltage-lockout, short-circuitprotection and over-temperature-protection will open a wide range of automotive- and industrial applications. Type TLE 4209 Data Sheet 1 Package P-DIP-8-4 2000-09-05 TLE 4209 Overview 1.3 Pin No. P-DIP-8-4 1 2 3 4 5 6 7 8 Pin Definitions and Functions Symbol FB HYST OUT1 Function Feedback Input Hysteresis I/O Power Output 1 Power Supply Voltage Power Output 2 Ground Range Input Reference Input VS OUT2 GND RANGE REF P-DIP-8-4 Figure 1 Pin Configuration (top view) Data Sheet 2 2000-09-05 TLE 4209 Overview 1.4 Functional Block Diagram Figure 2 Block Diagram Data Sheet 3 2000-09-05 TLE 4209 Overview 1.5 Parameter Absolute Maximum Ratings Symbol Limit Values min. Voltages Supply voltage Supply voltage Logic input voltages (FB, REF, RANGE, HYST) Currents Output current (OUT1, OUT2) IOUT Output current (Diode) Input current (FB, REF, RANGE, HYST) Temperatures Junction temperature Storage temperature Thermal Resistances Junction ambient (P-DIP-8-4) Unit Remarks max. VS VS VI – 0.3 –1 – 0.3 45 – 20 V V V – t < 0.5 s; IS > – 2 A – – –1 –2 –6 – 1 2 6 A A mA mA internally limited – IOUT IIN t < 2 ms; t/T < 0.1 Tj Tstg – 40 – 50 150 150 °C °C – – RthjA 100 K/W – Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Data Sheet 4 2000-09-05 TLE 4209 Overview 1.6 Parameter Supply voltage Supply voltage increasing Supply voltage decreasing Output current Input current (FB, REF) Junction temperature Operating Range Symbol Limit Values min. max. 18 V After VS rising above VUV ON Outputs in tristate Outputs in tristate – – – 8 – 0.3 – 0.3 – 0.8 – 50 – 40 Unit Remarks VS VS VS IOUT1-2 IIN Tj VUV ON V VUV OF V F 0.8 500 150 A µA °C Note: In the operating range, the functions given in the circuit description are fulfilled. 1.7 Electrical Characteristics 8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values min. Current Consumption Supply current Supply current Supply current typ. max. Unit Test Condition IS IS IS – – – 12 20 30 20 30 50 mA mA mA – IOUT1 = 0.4 A IOUT2 = – 0.4 A IOUT1 = 0.8 A IOUT2 = – 0.8 A Over- and Under Voltage Lockout UV Switch ON voltage UV Switch OFF voltage UV ON/OFF Hysteresis OV Switch OFF voltage OV Switch ON voltage OV ON/OFF Hysteresis VUV ON VUV OFF VUVHY VOV OFF VOV ON VOVHY – 6.3 – – 17.5 – 7.4 6.9 0.5 20.5 20 0.5 8 – – 23 – – V V V V V V VS increasing VS decreasing VUV ON – VUV OFF VS increasing VS decreasing VOV OFF – VOV ON Data Sheet 5 2000-09-05 TLE 4209 Overview 1.7 Electrical Characteristics (cont’d) 8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values min. Outputs OUT1-2 Saturation Voltages Source (upper) IOUT = – 0.2 A Source (upper) IOUT = – 0.4 A Sink (upper) IOUT = – 0.8 A Sink (lower) IOUT = 0.2 A Sink (lower) IOUT = 0.4 A Sink (lower) IOUT = 0.8 A Total drop Total drop Total drop typ. max. Unit Test Condition VSAT U VSAT U VSAT U VSAT L VSAT L VSAT L – – – – – – 0.85 0.90 1.10 0.15 0.25 0.45 1.15 1.20 1.50 0.23 0.40 0.75 V V V V V V Tj = 25 °C Tj = 25 °C Tj = 25 °C Tj = 25 °C Tj = 25 °C Tj = 25 °C IOUT = 0.2 A IOUT = 0.4 A IOUT = 0.8 A VSAT VSAT VSAT – – – 1.0 1.2 1.6 1.4 1.7 2.5 V V V VSAT = VSAT U + VSAT L VSAT = VSAT U + VSAT L VSAT = VSAT U + VSAT L Clamp Diodes Forward voltage; upper Upper leakage current Forward voltage; lower VFU ILKU VFL – – – 1.0 0.9 1.5 5 1.4 V mA V IF = 0.4 A IF = 0.4 A IF = 0.4 A Data Sheet 6 2000-09-05 TLE 4209 Overview 1.7 Electrical Characteristics (cont’d) 8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values min. Input-Interface Input REF Quiescent voltage Input resistance Input FB Quiescent voltage Input resistance Input/Output HYST Current Offset typ. max. Unit Test Condition VREFq RREF – 4.5 200 6.0 240 7.5 mV kΩ IREF = 0 µA 0 V < VREF < 0.5 V VFBq RFB – 4.5 200 6.0 240 7.5 mV kΩ IFB = 0 µA 0 V < VFB < 0.5 V IHYSTIO – 2 250 0.35 3 µA 250 µA VHYST = VS / 2 40 µA IREF = IFB = IHYSTIO – 1.3 0 40 1.3 µA IREF = IFB = Current Amplification AHYST AHYST = IHYST / (IREF – IFB) 0.8 0.95 1.1 − VHYST = VS / 2 – 20 µA < IHYST < – 10 µA; 10 µA < IHYST < 20 µA; IREF = 250 µA VHYST = VS / 2 Current Gain GHYST GHYST = (IHYST - IHYSTIO40) / (IREF – IFB) Threshold voltage High Deadband voltage High 0.8 0.95 1.1 - IHYST = +/- 2 µA; IREF = 40 µA; VHYST = VS / 2 – – VHYH / VS VDBH / VS 51 50 52 50.4 54 51 % % Data Sheet 7 2000-09-05 TLE 4209 Overview 1.7 Electrical Characteristics (cont’d) 8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Deadband voltage Low Threshold voltage Low Hysteresis Window Deadband Window Symbol Limit Values min. typ. 49.6 48 4.0 0.8 max. 50 49 5.0 1.2 % % % % – – (VHYH – VHYL)/ VS (VDBH – VDBL)/ VS 49 46 3.0 0.4 Unit Test Condition VDBL / VS VHYL / VS VHYW / VS VDBW / VS Input RANGE Input current Switch-OFF voltage High Switch-OFF voltage Low Thermal Shutdown Thermal shutdown junction temperature Thermal switch-on junction temperature Temperature hysteresis IRANGE VOFFH VOFFL –1 – 25 300 – 0 400 1 100 500 µA mV mV 0 V < VRANGE < VS refer to VS refer to GND TjSD TjSO ∆T 150 120 – 175 – 30 200 170 °C °C K – – – Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at TA = 25 °C and the given supply voltage. Data Sheet 8 2000-09-05 TLE 4209 Diagrams 2 Diagrams Figure 3 Application Circuit Data Sheet 9 2000-09-05 TLE 4209 Diagrams Figure 4 Hysteresis, Phaselag and Deadband-Definitions Data Sheet 10 2000-09-05 TLE 4209 Diagrams Figure 5 Timing and Phase-Lag Data Sheet 11 2000-09-05 TLE 4209 Package Outlines 3 Package Outlines P-DIP-8-4 (Plastic Dual In-line Package) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Data Sheet 12 Dimensions in mm 2000-09-05