TLE42364G

TLE42364G Low Dropout Linear Voltage Regulator TLE42364G Data Sheet Rev. 1.0, 2010-02-08 Automotive Power Low Dropout Linear Voltage Regulator TLE42364G 1 Features • • • • • • • • • • • • • Overview Output voltage 5 V Output voltage tolerance ≤ ±2% 100 mA current capability Very low current consumption Low dropout voltage Overtemperature shutdown Reverse polarity protection Output current limitation Wide temperature range Suitable for use in automotive electronics Enable Green Product (RoHS compliant) AEC Qualified PG-SOT223-4 Functional Description TLE42364G is a low dropout voltage regulator for 5 V supply in a PG-SOT223-4 SMD package. The IC regulates an input voltage VI in the range of 5.5 V < VI < 45 V to VQ,nom = 5 V. The maximum output current is more than 100 mA. The IC can be switched off via the enable input, which causes the current consumption to drop below 10 µA. The IC is protected against shortcircuit and overheat by the incorporated output current limitation and the overtemperature shutdown. Choosing External Components The input capacitor CI is necessary for compensating line influences. The output capacitor CQ is necessary for the stability of the regulating circuit. Stability is guaranteed at values CQ ≥ 10 µF and an ESR ≤ 10 Ω within the whole operating temperature range. Circuit Description The device includes a precise reference voltage, which is very accurate due to resistor adjustment. A control amplifier compares the divided output voltage to this reference voltage and drives the base of the PNP series transistor through a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. Type TLE42364G Data Sheet Package PG-SOT223-4 2 Marking 42364 Rev. 1.0, 2010-02-08 TLE42364G Block Diagram 2 Block Diagram Temperature Sensor 1 Control Amplifier Adjustment Bandgap Reference Saturation Control and Protection Circuit 3 Q Ι Buffer 2 EN INH 4 GND AEB01725 Figure 1 Block Diagram Data Sheet 3 Rev. 1.0, 2010-02-08 TLE42364G Pin Configuration 3 3.1 Pin Configuration Pin Assignment GND 4 1 2 3 Ι INH EN Q AEP01734 Figure 2 Pin Configuration 3.2 Pin 1 2 3 4 Pin Definitions and Functions Symbol I EN Q GND Function Input voltage; block to ground directly at the IC with a ceramic capacitor. Enable; connect to Vbatt to enable the IC, connect to GND to disable the IC. Output voltage; block to ground with a capacitor CQ ≥ 10 µF. Ground Data Sheet 4 Rev. 1.0, 2010-02-08 TLE42364G General Product Characteristics 4 4.1 General Product Characteristics Absolute Maximum Ratings Absolute Maximum Ratings 1) Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Input, Enable 4.1.1 Output 4.1.2 4.1.3 4.1.4 4.1.5 4.1.6 Voltage Junction Temperature Storage Temperature ESD Resistivity to GND ESD Resistivity to GND Voltage Max. 45 32 150 150 4 1.5 V V °C °C kV kV – – – – HBM2) CDM3) Unit Conditions VI, VEN VQ Tj Tstg VESD VESD -30 -1 -40 -50 -4 -1.5 Temperatures ESD Susceptibility 1) Not subject to production test, specified by design. 2) ESD susceptibility, HBM according to EIA/JESD 22-A114B 3) ESD susceptibility, Charged Device Model “CDM” EIA/JESD22-C101 or ESDA STM5.3.1 Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 4.2 Table 1 Pos. 4.2.1 4.2.2 Functional Range Functional Range Parameter Input voltage Junction temperature Symbol Min. Limit Values Max. 45 150 V °C – – 5.5 -40 Unit Conditions VI Tj Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the Electrical Characteristics table. Data Sheet 5 Rev. 1.0, 2010-02-08 TLE42364G General Product Characteristics 4.3 Thermal Resistance Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org. Pos. 4.3.1 4.3.2 4.3.3 4.3.4 4.3.5 Parameter Junction to Case 1) Symbol Min. Limit Values Typ. 17 54 139 73 64 Max. – – – – – – – – – – Unit K/W K/W K/W K/W K/W Conditions measured to heat slug 2) RthJC RthJA Junction to Ambient1) footprint only3) 300 mm² heatsink area3) 600 mm² heatsink area3) 1) Not subject to production test, specified by design. 2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm³ board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer. 3) Specified RthJA value is according to Jedec JESD 51-3 at natural convection on FR4 1s0p board; The Product (Chip+Package) was simulated on a 76.2 × 114.3 × 1.5 mm3 board with 1 copper layer (1 x 70µm Cu). Data Sheet 6 Rev. 1.0, 2010-02-08 TLE42364G Electrical Characteristics 5 5.1 Electrical Characteristics Electrical Characteristics Voltage Regulator Electrical Characteristics: VI = 13.5 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. 5.1.1 5.1.2 5.1.3 5.1.4 5.1.5 5.1.6 5.1.7 5.1.8 5.1.9 Enable 5.1.10 5.1.11 Enable on voltage Enable off voltage Parameter Output voltage Output current limitation Current consumption Iq = II - IQ Current consumption Symbol Min. Limit Values Typ. 5.0 150 – – 10 0.25 – 15 54 Max. 5.1 – 10 400 15 0.5 40 30 – V mA µA µA mA V mV mV dB 5 mA ≤ IQ ≤ 100 mA 6 V ≤ VI ≤ 28 V – 4.9 120 – – – Unit Conditions VQ IQ Iq Iq Iq Iq = II - IQ Current consumption VEN = 0 V; Tj ≤ 100 °C IQ = 1 m A Enable ON Iq = II - IQ Dropout voltage Load regulation Line regulation Power Supply ripple rejection IQ = 100 mA Enable ON IQ = 100 mA1) IQ = 5 to 100 mA VI = 6 V VI = 6 to 28 V IQ = 5 m A fr = 100 Hz Vr = 0.5 Vpp – – Vdr – ∆VQ_load – ∆VQ_line PSRR – – 5.1.12 Enable current 5 15 25 µA VEN = 5 V 1) Dropout voltage = VI - VQ (measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V). VEN, on VEN, off IEN 3.5 – – – – 0.8 V V Data Sheet 7 Rev. 1.0, 2010-02-08 TLE42364G Electrical Characteristics 5.2 Typical Performance Characteristics Voltage Regulator Current Consumption Iq versus Output Current IQ AED01978 Dropout Voltage VDR versus Output Current IQ 800 V DR mV 700 600 12 AED01980 Ι q mA 10 8 500 Tj = 125 C Vi = 13.5 V 6 400 300 4 200 Tj = 25 C 2 100 0 25 50 75 100 125 mA 175 0 0 50 100 mA 150 ΙQ Current Consumption Iq versus Output Current IQ Current Consumption Iq versus Input Voltage VI AED01981 ΙQ 3.0 15 AED03013 Ι q mA 2.5 Ι q mA R L = 50 Ω 2.0 10 1.5 1.0 Vi = 13.5 V 0.5 5 R L = 100 Ω 0 0 5 10 15 20 30 mA ΙQ 0 0 10 20 30 40 V 50 VΙ Data Sheet 8 Rev. 1.0, 2010-02-08 TLE42364G Electrical Characteristics Output Voltage VQ versus Temperature Tj Output Voltage Vq versus Input Voltage VI AED03014 5.20 VQ V 5.10 Vi = 13.5 V 5.00 6 VQ V 5 AED01984 R L = 50 Ω 4 4.90 3 4.80 2 4.70 1 4.60 -40 0 40 80 120 C 160 Tj 0 0 2 4 6 8 V 10 VΙ Output Voltage Vq versus Enable Voltage VEN 6 VQ V 5 V Ι = 13.5 V 4 V Ι = VINH 3 AED02014 Output Current Iq versus Input Voltage VI 200 AED03015 Ι Q mA 150 Tj = 25 C 100 Tj = 125 C 2 50 1 0 0 1 2 3 4 5V6 VINH 0 0 10 20 30 40 V 50 VΙ Data Sheet 9 Rev. 1.0, 2010-02-08 TLE42364G Application Information 6 Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. Input 5.5 V/10.5 V to 45 V Ι Q Output CQ 22 µF CΙ e.g. Kl. 15 TLE42364G EN INH GND TLE42364G_App Figure 3 Application Diagram Note: This is a very simplified example of an application circuit. The function must be verified in the real application. 6.1 • Further Application Information For further information you may contact http://www.infineon.com/ Data Sheet 10 Rev. 1.0, 2010-02-08 TLE42364G Package Outlines 7 Package Outlines A 6.5 ±0.2 3 ±0.1 0.1 max 1.6 ±0.1 B 7 ±0.3 15˚max 4 1 0.7 ±0.1 2 3 2.3 4.6 0.5 min 0.28 ±0.04 0.25 Figure 4 M A 0.25 M B PG-SOT223-4 (Plastic Small Outline Transistor) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Data Sheet 11 3.5 ±0.2 Dimensions in mm Rev. 1.0, 2010-02-08 +0.2 acc. to DIN 6784 TLE42364G Revision History 8 Revision 1.0 Revision History Date 2010-02-08 Changes Initial data sheet Data Sheet 12 Rev. 1.0, 2010-02-08 Edition 2010-02-08 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.