TLE4274

Voltage Regulator TLE 4274 / 3.3V;2.5V Features • • • • • • Output voltage: 3.3 V/2.5 V ± 4% Current capability 400 mA Very low current consumption Short-circuit proof Reverse polarity proof Suitable for use in automotive electronics P-SOT223-4 Functional Description The TLE 4274 / 3.3V;2.5V is a voltage regulator available in a SOT223 and TO252 package. The IC regulates an input voltage up to 40 V to VQrated = 3.3 V/2.5 V. The maximum output current is 400 mA. The IC is shortcircuit proof and has a shutdown circuit protecting it against overtemperature. The TLE 4274 is also available as 5 V, 8.5 V and 10 V version. Please refer to the data sheet TLE 4274. Dimensioning Information on External Components The input capacitor CI is necessary for compensating line influences. Using a resistor of approx. 1 Ω in series with CI, the oscillating of input inductivity and input capacitance can be damped. The output capacitor CQ is necessary for the stability of the regulation circuit. Stability is guaranteed for capacities CQ ≥ 10 µF with an ESR of ≤ 2.5 Ω within the operating temperature range. P-TO252-3-1 Type TLE 4274 GSV33 TLE 4274 DV33 TLE 4274 GSV25 Data Sheet Ordering Code Q67006-A9289 Q67006-A9348 Q67006-A9359 1 Package P-SOT223-4-1 P-TO252-3-1 P-SOT223-4-1 Rev. 2.1, 2004-01-01 TLE 4274 / 3.3V;2.5V Circuit Description The control amplifier compares a reference voltage to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also includes a number of internal circuits for protection against: • • • Overload Overtemperature Reverse polarity P-TO252-3-1 (D-PAK) P-SOT223-4-1 GND Ι GND Q 1 2 3 AEP02282 4 GND 1 Ι Q AEP02561 3 Figure 1 Table 1 Pin No. 1 2, 4 3 I Pin Configuration (top view) Pin Definitions and Functions Symbol GND Q Function Input; block to ground directly at the IC with a ceramic capacitor. Ground; P-TO252-3-1: internally connected to heatsink Output; block to ground with capacitor CQ ≥ 10 µF, ESR ≤ 2.5 Ω Data Sheet 2 Rev. 2.1, 2004-01-01 TLE 4274 / 3.3V;2.5V Temperature Sensor Saturation Control and Protection Circuit 3 Control Amplifier Q Ι 1 Buffer Bandgap Reference 2 GND AEB02283 Figure 2 Block Diagram Data Sheet 3 Rev. 2.1, 2004-01-01 TLE 4274 / 3.3V;2.5V Table 2 Absolute Maximum Ratings Tj = -40 to 150 °C Parameter Input Voltage Current Output Voltage Current Ground Current Temperature Junction temperature Storage temperature Symbol Limit Values Min. Max. 45 – 40 – 100 150 150 V – V – mA – Internally limited – Internally limited – – – Unit Test Condition VI II VQ IQ IGND Tj Tstg -42 – -1.0 – – – -50 °C °C Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. Table 3 Parameter Input voltage Junction temperature Thermal Resistance Junction ambient Junction ambient Junction case Junction case 2 Operating Range Symbol Limit Values Min. Max. 40 150 100 70 25 4 V – – SOT2231) TO2522) SOT223 TO252 4.7 -40 – – – – Unit Remarks VI Tj Rthja Rthja Rthjc Rthjc °C K/W K/W K/W K/W 1) Soldered in, 1 cm copper area at pin 4, FR4 2) Soldered in, minimal footprint, FR4 Data Sheet 4 Rev. 2.1, 2004-01-01 TLE 4274 / 3.3V;2.5V Table 4 Characteristics VI = 6 V; -40 °C < Tj < 150 °C (unless otherwise specified) Parameter Output voltage V33-Version Output voltage V33-Version Output voltage V25-Version Output voltage V25-Version Output current limitation1) Symbol Limit Values Min. Typ. 3.3 3.3 2.5 2.5 600 100 8 20 0.7 1.0 40 10 60 0.5 Max. 3.44 3.44 2.6 2.6 – 220 15 30 1.2 2.0 70 25 – – V V V V mA 5 mA < IQ < 400 mA 4.7 V < VI < 28 V 5 mA < IQ < 200 mA 4.7 V < VI < 40 V 5 mA < IQ < 400 mA 4.7 V < VI < 28 V 5 mA < IQ < 200 mA 4.7 V < VI < 40 V – 3.17 3.17 2.4 2.4 400 – – – – – – – – – Unit Measuring Condition VQ VQ VQ VQ IQ Current consumption; Iq Iq = II - IQ Current consumption; Iq Iq = II - IQ Current consumption; Iq Iq = II - IQ Drop voltage1) V33-Version Drop voltage1) V25-Version Load regulation Line regulation Power supply ripple rejection Temperature output voltage drift µA mA mA V V mV mV dB mV/K IQ = 1 mA IQ = 250 mA IQ = 400 mA IQ = 300 mA Vdr = VI - VQ IQ = 300 mA Vdr = VI - VQ IQ = 5 mA to 300 mA; VI = 6 V ∆Vl = 12 V to 32 V IQ = 5 mA fr = 100 Hz; Vr = 0.5 Vpp – Vdr Vdr ∆VQ ∆VQ PSRR dVQ/dT 1) Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 6 V. Data Sheet 5 Rev. 2.1, 2004-01-01 TLE 4274 / 3.3V;2.5V Ι 1 TLE 4274 GSV33 4 Q VΙ CQ 100 µ F CΙ 100 nF 2, 4 GND CQ 10 µF VQ R Load AES02284 Figure 3 Measuring Circuit 5 - 40 V Input Ι1 4Q 3.3 V / 2.5 V Output CΙ 100 nF TLE 4274 GSV33 2, 4 GND CQ 10 µF AES02285 Figure 4 Application Circuit Data Sheet 6 Rev. 2.1, 2004-01-01 TLE 4274 / 3.3V;2.5V 4.5 - 40 V CΙ 470 nF 1 kΩ Ι TLE 4276 Q CQ1 22 µF INH GND 10 V e.g. to sensor e.g. to µC Ι TLE 4274 GSV33 Q CQ2 10 µF 3.3 V to µC GND AES02579 Figure 5 Application Example Data Sheet 7 Rev. 2.1, 2004-01-01 TLE 4274 / 3.3V;2.5V Typical Performance Characteristics Output Voltage VQ versus Junction Temperature Tj (V33-Version) 3.5 AED02288 Output Voltage VQ versus Junction Temperature Tj (V25-Version) 2.7 AED02806 VQ V 3.4 VQ V 2.6 VI = 6 V 3.3 2.5 VI = 6 V 3.2 2.4 3.1 2.3 3.0 2.2 2.9 -40 0 40 80 120 ˚C 160 2.1 -40 0 40 80 120 ˚C 160 Tj Tj Input Current Iq versus Input Voltage VI (V33-Version) 3.5 mA II 3.0 2.5 2.0 1.5 1.0 0.5 0 -2 -50 AED01969 Input Current Iq versus Input Voltage VI (V25-Version) 3.5 mA II 3.0 2.5 2.0 AED03016 T j = 25 ˚C R I = 3.3 k Ω 1.5 1.0 0.5 0 -2 -50 T j = 25 ˚C R I = 3.3 k Ω -25 0 25 V 50 -25 0 25 V 50 VI VI Data Sheet 8 Rev. 2.1, 2004-01-01 TLE 4274 / 3.3V;2.5V Current Consumption Iq versus Output Current IQ (low load) 0.6 AED02268 Current Consumption Iq versus Output Current IQ (high load) 60 AED02267 Iq mA 0.5 Iq mA 50 0.4 T j = 25 ˚C VI = 13.5 V 40 0.3 30 T j = 25 ˚C VI = 13.5 V 0.2 20 0.1 10 0 0 10 20 30 40 mA 60 0 0 100 200 300 400 mA 600 IQ IQ Output Current IQ versus Input Voltage VI 800 mA AED02287 Region of Stability for CQ = 10 µF 10 ESR 9 8 AED03050 Ω ΙQ 600 T j = 25 C VQ = 0 V 400 7 6 5 4 3 200 2 1 0 0 10 20 30 40 V 50 VΙ 0 0.2 100 101 102 mA 500 IQ Data Sheet 9 Rev. 2.1, 2004-01-01 TLE 4274 / 3.3V;2.5V Package Outlines A 6.5 ±0.2 3 ±0.1 4 0.1 MAX. 1.6 ±0.1 1 0.7 ±0.1 4.6 0.25 M 2 2.3 3 0.5 MIN. 0.28 ±0.04 A 0.25 M B 3.5 ±0.2 7 ±0.3 +0.2 acc. to DIN 6784 15˚ MAX. B GPS05560 Figure 6 P-SOT223-4-1 (Plastic Small Outline Transistor) You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. SMD = Surface Mounted Device Data Sheet 10 Dimensions in mm Rev. 2.1, 2004-01-01 TLE 4274 / 3.3V;2.5V 6.5 +0.15 -0.10 A 5.4 ±0.1 B 2.3 +0.05 -0.10 0.9 +0.08 -0.04 1 ±0.1 9.9 ±0.5 6.22 -0.2 0.8 ±0.15 0.51 min 0.15 max per side 3x 0.75 ±0.1 2.28 0...0.15 0.5 +0.08 -0.04 1 ±0.1 4.57 0.25 M AB 0.1 GPT09051 All metal surfaces tin plated, except area of cut. Figure 7 P-TO252-3-1 (Plastic Transistor Single Outline) You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. SMD = Surface Mounted Device Data Sheet 11 Dimensions in mm Rev. 2.1, 2004-01-01 Edition 2004-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2004. All Rights Reserved. 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