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TLE42754_08

TLE42754_08

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    TLE42754_08 - Low Dropout Linear Fixed Voltage Regulator - Infineon Technologies AG

  • 数据手册
  • 价格&库存
TLE42754_08 数据手册
Data Sheet, Rev. 1.1, September 2008 TLE42754 L o w D r o p o u t Li n e a r F i x e d Vo l t a g e R e g u l a t o r Automotive Power Low Dropout Linear Fixed Voltage Regulator TLE42754 1 Features • • • • • • • • • • • • • • Overview Output Voltage 5 V ± 2% Ouput Current up to 450 mA Very low Current Consumption Power-on and Undervoltage Reset with Programmable Delay Time Reset Low Down to VQ = 1 V Very Low Dropout Voltage Output Current Limitation Reverse Polarity Protection Overtemperature Protection Suitable for Use in Automotive Electronics Wide Temperature Range from -40 °C up to 150 °C Input Voltage Range from -42 V to 45 V Green Product (RoHS compliant) AEC Qualified PG-TO252-5 Description The TLE42754 is a monolithic integrated low-dropout voltage regulator in a 5-pin TO-package, especially designed for automotive applications. An input voltage up to 42 V is regulated to an output voltage of 5.0 V. The component is able to drive loads up to 450 mA. It is short-circuit proof by the implemented current limitation and has an integrated overtemperature shutdown. A reset signal is generated for an output voltage VQ,rt of typically 4.65 V. The power-on reset delay time can be programmed by the external delay capacitor. Dimensioning Information on External Components An input capacitor CI is recommended for compensation of line influences. An output capacitor CQ is necessary for the stability of the control loop. PG-SSOP-14 exposed pad PG-TO263-5 Type TLE42754D TLE42754G TLE42754E Data Sheet Package PG-TO252-5 PG-TO263-5 PG-SSOP-14 exposed pad 2 Marking 42754D 42754G 42754E Rev. 1.1, 2008-09-24 TLE42754 Overview Circuit Description The control amplifier compares a reference voltage to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The component also has a number of internal circuits for protection against: • • • Overload Overtemperature Reverse polarity Data Sheet 3 Rev. 1.1, 2008-09-24 TLE42754 Block Diagram 2 Block Diagram I TLE42754 Q Protection Circuits Bandgap Reference GND Reset Generator RO D Figure 1 Block Diagram Data Sheet 4 Rev. 1.1, 2008-09-24 TLE42754 Pin Configuration 3 3.1 Pin Configuration Pin Assignment TLE42754D (PG-TO252-5) and TLE42754G (PG-TO263-5) P-TO252-5 (D-PAK) GND P-TO263-5 (D²-PAK) 1 Ι RO DQ 5 Ι AEP02580 GND Q D RO IEP02528 Figure 2 Pin Configuration (top view) 3.2 Pin Definitions and Functions TLE42754D (PG-TO252-5) and TLE42754G (PGTO263-5) Symbol I Function Input for compensating line influences, a capacitor to GND close to the IC terminals is recommended Reset Output open collector output; external pull-up resistor to a positive potential required; leave open if the reset function is not needed TLE42754G (PG-TO263-5) only: Ground internally connected to tab Reset Delay Timing connect a ceramic capacitor to GND for adjusting the reset delay time; leave open if the reset function is not needed Output block to GND with a capacitor close to the IC terminals, respecting the values given for its capacitance CQ and ESR in the table “Functional Range” on Page 8 Ground connect to heatsink area Pin 1 2 RO 3 4 GND D 5 Q TAB GND Data Sheet 5 Rev. 1.1, 2008-09-24 TLE42754 Pin Configuration 3.3 Pin Assignment TLE42754E (PG-SSOP-14 exposed pad) Figure 3 Pin Configuration (top view) 3.4 Pin 1,3,5,7 2 Pin Definitions and Functions TLE42754E (PG-SSOP-14 exposed pad) Symbol n.c. RO Function not connected leave open or connect to GND Reset Output open collector output; external pull-up resistor to a positive potential required; leave open if the reset function is not needed Ground Reset Delay Timing connect a ceramic capacitor to GND for adjusting the reset delay time; leave open if the reset function is not needed not connected leave open or connect to GND Output block to GND with a capacitor close to the IC terminals, respecting the values given for its capacitance CQ and ESR in the table “Functional Range” on Page 8 Input for compensating line influences, a capacitor to GND close to the IC terminals is recommended Exposed Pad connect to heatsink area; connect with GND on PCB 4 6 GND D 8,10,11,12, n.c. 14 9 Q 13 I Pad – Data Sheet 6 Rev. 1.1, 2008-09-24 TLE42754 General Product Characteristics 4 4.1 General Product Characteristics Absolute Maximum Ratings Absolute Maximum Ratings 1) -40 °C ≤ Tj ≤ 150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Input 4.1.1 Output 4.1.2 4.1.3 4.1.4 4.1.5 4.1.6 4.1.7 4.1.8 4.1.9 Voltage Voltage Voltage Junction Temperature Storage Temperature ESD Absorption Voltage Parameter Symbol Limit Values Min. Max. 45 7 25 7 150 150 2 500 750 V V V V °C °C kV V V – – – – – – Human Body Model (HBM)2) Charge Device Model (CDM)3) Charge Device Model (CDM)3) at corner pins Unit Conditions VI VQ VRO VD Tj Tstg VESD,HBM VESD,CDM -42 -0.3 -0.3 -0.3 -40 -50 -2 -500 -750 Reset Output Reset Delay Temperature ESD Absorption 1) Not subject to production test, specified by design. 2) ESD HBM Test according AEC-Q100-002 - JESD22-A114 3) ESD CDM Test according ESDA STM5.3.1 Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Data Sheet 7 Rev. 1.1, 2008-09-24 TLE42754 General Product Characteristics 4.2 Functional Range Pos. 4.2.1 4.2.2 4.2.3 Parameter Input Voltage Output Capacitor’s Requirements for Stability Junction Temperature Symbol Min. Limit Values Max. 42 – 3 150 5.5 22 – -40 Unit V µF Ω °C Conditions – –1) –2) – VI CQ ESR(CQ) Tj 1) the minimum output capacitance requirement is applicable for a worst case capacitance tolerance of 30% 2) relevant ESR value at f = 10 kHz Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. Data Sheet 8 Rev. 1.1, 2008-09-24 TLE42754 General Product Characteristics 4.3 Pos. Thermal Resistance Parameter Symbol Min. Limit Value Typ. 3.7 27 110 57 42 – – – – – Max. K/W K/W K/W K/W K/W – 2) Unit Conditions TLE42754D (PG-TO252-5) 4.3.4 4.3.5 4.3.6 4.3.7 4.3.8 TLE42754G (PG-TO263-5) 4.3.9 4.3.10 4.3.11 4.3.12 4.3.13 TLE42754E (PG-SSOP-14 exposed pad) 4.3.14 4.3.15 4.3.16 4.3.17 4.3.18 Junction to Case1) Junction to Ambient1) Junction to Case1) Junction to Ambient 1) Junction to Case1) Junction to Ambient 1) RthJC RthJA – – – – – footprint only3) 300 mm2 heatsink area on PCB3) 600 mm2 heatsink area on PCB3) – 2) RthJC RthJA – – – – – 3.7 22 70 42 33 – – – – – K/W K/W K/W K/W K/W footprint only3) 300 mm2 heatsink area on PCB3) 600 mm2 heatsink area on PCB3) – 2) RthJC RthJA – – – – – 7 43 120 59 49 – – – – – K/W K/W K/W K/W K/W footprint only3) 300 mm2 heatsink area on PCB3) 600 mm2 heatsink area on PCB3) 1) not subject to production test, specified by design 2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm³ board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer. 3) Specified RthJA value is according to JEDEC JESD 51-3 at natural convection on FR4 1s0p board; The Product (Chip+Package) was simulated on a 76.2 × 114.3 × 1.5 mm3 board with 1 copper layer (1 x 70µm Cu). Data Sheet 9 Rev. 1.1, 2008-09-24 TLE42754 Block Description and Electrical Characteristics 5 5.1 Block Description and Electrical Characteristics Voltage Regulator The output voltage VQ is controlled by comparing a portion of it to an internal reference and driving a PNP pass transistor accordingly. The control loop stability depends on the output capacitor CQ, the load current, the chip temperature and the poles/zeros introduced by the integrated circuit. To ensure stable operation, the output capacitor’s capacitance and its equivalent series resistor ESR requirements given in the table “Functional Range” on Page 8 have to be maintained. For details see also the typical performance graph “Output Capacitor Series Resistor ESR(CQ) versus Output Current IQ” on Page 13. As the output capacitor also has to buffer load steps it should be sized according to the application’s needs. An input capacitor CI is strongly recommended to compensate line influences. Connect the capacitors close to the component’s terminals. A protection circuitry prevent the IC as well as the application from destruction in case of catastrophic events. These safeguards contain an output current limitation, a reverse polarity protection as well as a thermal shutdown in case of overtemperature. In order to avoid excessive power dissipation that could never be handled by the pass element and the package, the maximum output current is decreased at input voltages above VI = 28 V. The thermal shutdown circuit prevents the IC from immediate destruction under fault conditions (e.g. output continuously short-circuited) by switching off the power stage. After the chip has cooled down, the regulator restarts. This leads to an oscillatory behaviour of the output voltage until the fault is removed. However, junction temperatures above 150 °C are outside the maximum ratings and therefore significantly reduce the IC’s lifetime. The TLE42754 allows a negative supply voltage. In this fault condition, small currents are flowing into the IC, increasing its junction temperature. This has to be considered for the thermal design, respecting that the thermal protection circuit is not operating during reverse polarity conditions. Supply II I Q IQ Regulated Output Voltage Saturation Control Current Limitation C CI Temperature Shutdown Bandgap Reference ESR } CQ LOAD BlockDiagram_VoltageRegulator.vsd GND Figure 4 Voltage Regulator Data Sheet 10 Rev. 1.1, 2008-09-24 TLE42754 Block Description and Electrical Characteristics Electrical Characteristics Voltage Regulator VI = 13.5 V, -40 °C ≤ Tj ≤ 150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. 5.1.1 5.1.2 5.1.3 5.1.4 5.1.5 Parameter Output Voltage Output Voltage Output Voltage Output Current Limitation Load Regulation steady-state Line Regulation steady-state Dropout Voltage1) Symbol Min. Limit Values Typ. 5.0 5.0 5.0 – -15 Max. 5.1 5.1 5.1 1100 – V V V mA mV 1 mA < IQ < 450 mA 9 V < VI < 2 8 V 1 mA < IQ < 400 mA 6 V < VI < 2 8 V 1 mA < IQ < 200 mA 6 V < VI < 4 0 V 4.9 4.9 4.9 450 -30 Unit Conditions VQ VQ VQ IQ,max ∆VQ,load ∆VQ,line Vdr PSRR dVQ/dT VQ = 4.8V IQ = 5 mA to 400 mA 5.1.6 5.1.7 5.1.8 5.1.9 5.1.10 5.1.11 – – – – 151 – 5 250 60 0.5 – 20 15 500 – – 200 – mV mV dB mV/K °C °C Vdr = VI - VQ Power Supply Ripple Rejection2) Temperature Output Voltage Drift Overtemperature Shutdown Threshold Overtemperature Shutdown Threshold Hysteresis VI = 8 V VI = 8 V to 32 V IQ = 5 mA IQ = 300 mA fripple = 100 Hz Vripple = 0.5 Vpp – Tj,sd Tj,sdh Tj increasing2) Tj decreasing2) 1) measured when the output voltage VQ has dropped 100mV from the nominal value obtained at VI = 13.5V 2) not subject to production test, specified by design Data Sheet 11 Rev. 1.1, 2008-09-24 TLE42754 Block Description and Electrical Characteristics Typical Performance Characteristics Voltage Regulator Output Voltage VQ versus Junction Temperature Tj 5,20 01_VQ_T J.VSD Output Current IQ versus Input Voltage VI 1000 T j = -40 °C 02_IQ_VI.VSD 900 T j = 25 °C 5,10 800 700 T j = 150 °C 5,00 4,90 V I = 13.5 V I Q = 50 mA IQ,max [mA] 80 120 160 V Q [V] 600 500 400 300 200 100 4,80 4,70 4,60 -40 0 40 0 0 10 20 30 40 50 T j [°C] Power Supply Ripple Rejection PSRR versus ripple frequency fr) 100 90 80 70 03_PSRR_FR.VSD V I [V] Line Regulation ∆VQ,line versus Input Voltage Change ∆VI) 9 8 7 6 04_DVQ_DVI.VSD T j = -40 °C T j = 25 °C T j = 150 °C T j = 150 °C PSRR [dB] ∆V Q [mV] 60 50 40 30 20 10 0 0,01 5 4 3 T j = 25 °C I Q = 10 mA C Q = 22 µF ceramic V I = 13.5 V V ripple = 0.5 Vpp 0,1 1 10 100 1000 T j = -40 °C 2 1 0 0 10 20 30 40 f [kHz] V I [V] Data Sheet 12 Rev. 1.1, 2008-09-24 TLE42754 Block Description and Electrical Characteristics Load Regulation ∆VQ,load versus Output Current Change ∆IQ 0 05_DVQ_DIQ.VSD Output Capacitor Series Resistor ESR(CQ) versus Output Current IQ VI = 8 V -5 1000 06_ESR_IQ.VSD 100 C Q = 22 µF T j = -40..150 °C Unstable Region V I = 6..28 V ∆V Q [mV] -10 T j = 25 °C T j = 150 °C ESR(C Q) [Ω ] T j = -40 °C 10 -15 1 -20 0,1 Stable Region -25 0 100 200 300 400 500 0,01 0 100 200 300 400 500 I Q [mA] Dropout Voltage Vdr versus Junction Temperature Tj 500 450 400 350 07_VDR_TJ.VSD I Q [mA] I Q = 400 mA I Q = 300 mA V DR[mV] 300 250 200 150 100 50 0 -40 0 40 80 120 160 I Q = 100 mA I Q = 10 mA T j [°C] Data Sheet 13 Rev. 1.1, 2008-09-24 TLE42754 Block Description and Electrical Characteristics 5.2 Current Consumption Electrical Characteristics Current Consumption VI = 13.5 V, -40 °C ≤ Tj ≤ 150 °C, positive current flowing into pin (unless otherwise specified) Pos. 5.2.1 5.2.2 5.2.3 5.2.4 Parameter Current Consumption Iq = II - IQ Symbol Limit Values Min. Typ. Max. – 150 200 – – – 150 5 15 220 10 25 Unit µA µA mA mA Conditions Iq IQ = 1 mA Tj = 25 °C IQ = 1 mA Tj = 85 °C IQ = 250 mA IQ = 400 mA Data Sheet 14 Rev. 1.1, 2008-09-24 TLE42754 Block Description and Electrical Characteristics Typical Performance Characteristics Current Copnsumption Current Consumption Iq versus Output Current IQ (IQ low) 7 V I = 13.5 V 08_IQ_IQ_IQLOW.VSD Current Consumption Iq versus Output Current IQ 30 V I = 13.5 V 09_IQ_IQ.VSD 6 T j = 150 °C 25 T j = 150 °C 5 20 I q [mA] I q [mA] 4 15 T j = 25 °C 3 T j = 25 °C 10 2 5 1 0 0 50 100 150 200 0 0 100 200 300 400 500 I Q [mA] Current Consumption Iq versus Input Voltage VI 60 10_IQ_VI.VSD I Q [mA] 50 40 I q [mA] 30 R LOAD = 12.5 Ω 20 10 R LOAD = 500 Ω 0 0 10 20 30 40 V I [V] Data Sheet 15 Rev. 1.1, 2008-09-24 TLE42754 Block Description and Electrical Characteristics 5.3 Reset Function The reset function provides several features: Output Undervoltage Reset: An output undervoltage condition is indicated by setting the Reset Output RO to “low”. This signal might be used to reset a microcontroller during low supply voltage. Power-On Reset Delay Time: The power-on reset delay time trd allows a microcontoller and oscillator to start up. This delay time is the time frame from exceeding the reset switching threshold VRT until the reset is released by switching the reset output “RO” from “low” to “high”. The power-on reset delay time trd is defined by an external delay capacitor CD connected to pin D charged by the delay capacitor charge current ID,ch starting from VD = 0 V. If the application needs a power-on reset delay time trd different from the value given in Item 5.3.6, the delay capacitor’s value can be derived from the specified values in Item 5.3.6 and the desired power-on delay time: t rd, new C D = ---------------- × 47nF t rd with • • • CD: capacitance of the delay capacitor to be chosen trd,new: desired power-on reset delay time trd: power-on reset delay time specified in this datasheet For a precise calculation also take the delay capacitor’s tolerance into consideration. Reset Reaction Time: The reset reaction time avoids that short undervoltage spikes trigger an unwanted reset “low” signal. The reset reaction rime trr considers the internal reaction time trr,int and the discharge time trr,d defined by the external delay capacitor CD (see typical performance graph for details). Hence, the total reset reaction time becomes: t rr = t rd, int + t rr, d with • • • trr: reset reaction time trr,int: internal reset reaction time trr,d: reset discharge Reset Output Pull-Up Resistor RRO: The Reset Output RO is an open collector output requiring an external pull-up resistor to a voltage VIO, e.g. VQ. In Table “Electrical Characteristics Reset Function” on Page 19 a minimum value for the external resistor RRO is given for the case it is connected to VQ or to a voltage VIO < VQ. If the pull-up resistor shall be connected to a voltage VIO > VQ, use the following formula: 5k Ω R RO = ---------- × V IO VQ Data Sheet 16 Rev. 1.1, 2008-09-24 TLE42754 Block Description and Electrical Characteristics Supply I Q VDD Int. Supply Control CQ ID,ch RO RRO Reset VRT VDST I RO MicroController IDR,dsch GND BlockDiagram_Reset.vsd D GND CD Figure 5 Block Diagram Reset Function Data Sheet 17 Rev. 1.1, 2008-09-24 TLE42754 Block Description and Electrical Characteristics VI t VQ VRT t < trr,total 1V t VD V DU V DRL t VRO t rd trr,total trd t rr,total t rd t rr,total t rd V RO,low 1V t Thermal Shutdown Input Voltage Dip Undervoltage Spike at output Overload T i mi n g Di a g ra m_ Re se t. vs Figure 6 Timing Diagram Reset Data Sheet 18 Rev. 1.1, 2008-09-24 TLE42754 Block Description and Electrical Characteristics Electrical Characteristics Reset Function VI = 13.5 V, -40 °C ≤ Tj ≤ 150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Min. Output Undervoltage Reset 5.3.1 Output Undervoltage Reset Switching Thresholds Reset Output Low Voltage Reset Output Sink Current Capability Reset Output Leakage Current Reset Output External Pull-up Resistor to VQ Power On Reset Delay Time Upper Delay Switching Threshold Lower Delay Switching Threshold Delay Capacitor Charge Current Delay Capacitor Reset Discharge Current Delay Capacitor Discharge Time Limit Values Typ. 4.65 Max. 4.8 V Unit Conditions VRT 4.5 VQ decreasing Reset Output RO 5.3.2 5.3.3 5.3.4 5.3.5 VRO,low IRO,max IRO,leak RRO – 0.2 – 5 0.2 – 0 – 0.4 – 10 – V mA µA kΩ 1 V ≤ VQ ≤ VRT ; IRO = 0.2 mA 1 V ≤ VQ ≤ VRT ; VRO = 5 V VRO = 5 V 1 V ≤ VQ ≤ VRT ; VRO ≤ 0.4 V Reset Delay Timing 5.3.6 5.3.7 5.3.8 5.3.9 5.3.10 5.3.11 trd VDU VDRL ID,ch ID,dch trr,d 10 – – – – – 16 1.8 0.65 5.5 100 0.5 22 – – – – 1 ms V V µA mA µs CD = 47 nF – – VD = 1 V VD = 1 V Calculated Value: trr,d = CD*(VDU VDRL)/ ID,dch CD = 47 nF TLE42754D TLE42754G 5.3.12 Internal Reset Reaction Time trr,int – 4 7 µs CD = 0 nF1) TLE42754D TLE42754G 5.3.13 Reset Reaction Time trr,total – 4.5 8 µs Calculated Value: trr,total = trr,int + trr,d CD = 47 nF TLE42754D TLE42754G 1) parameter not subject to production test; specified by design Data Sheet 19 Rev. 1.1, 2008-09-24 TLE42754 Block Description and Electrical Characteristics Typical Performance Characteristics Undervoltage Reset Switching Threshold VRT versus Tj 5 11_VRT_TJ.VSD Power On Reset Delay Time trd versus Junction Temperature Tj 20 18 12_TRD_TJ.VSD C D = 47 nF 4,9 16 14 12 4,8 V RT [V] t rd [ms] -40 0 40 80 120 160 4,7 10 8 4,6 6 4 2 4,5 4,4 0 -40 0 40 80 120 160 T j [°C] Power On Reset DelayTime trd versus Capacitance CD 90 80 T j = -40 °C 70 60 T j = 25 °C T j = 150 °C 2,5 13_TRD_CD.VSD T j [°C] Internal Reset Reaction Time trr,int versus Junction Temperature Tj 3,5 14_T RRINT_TJ.VSD 3 50 40 30 t rr,int [µs] 0 50 100 150 200 250 t rd [ms] 2 1,5 1 20 10 0 0,5 0 -40 0 40 80 120 160 C D [nF] T j [°C] Data Sheet 20 Rev. 1.1, 2008-09-24 TLE42754 Block Description and Electrical Characteristics Delay Capacitor Discharge Time trr,d versus Junction Temperature Tj 0,6 C D = 47 nF 0,5 15_TRRD_TJ.VSD 0,4 t rr,d [µs] 0,3 0,2 0,1 0 -40 0 40 80 120 160 T j [°C] Data Sheet 21 Rev. 1.1, 2008-09-24 TLE42754 Package Outlines 6 Package Outlines 6.5 +0.15 -0.05 5.7 MAX. (4.24) 1 ±0.1 1) A B 0.8 ±0.15 2.3 +0.05 -0.10 0.5 +0.08 -0.04 (5) 9.98 ±0.5 6.22 -0.2 0.9 +0.20 -0.01 0...0.15 0.51 MIN. 0.15 MAX. per side 5 x 0.6 ±0.1 1.14 0.5 +0.08 -0.04 0.1 B 4.56 0.25 M A B 1) Includes mold flashes on each side. All metal surfaces tin plated, except area of cut. Please insert the graphic number! Figure 7 PG-TO252-5 Data Sheet 22 Rev. 1.1, 2008-09-24 TLE42754 Package Outlines 4.4 10 ±0.2 0...0.3 8.5 1) A 1.27 ±0.1 B 0.05 1±0.3 (15) 9.25 ±0.2 7.55 1) 2.4 0.1 0...0.15 5 x 0.8 ±0.1 4 x 1.7 0.25 M 4.7 ±0.5 2.7 ±0.3 0.5 ±0.1 8˚ MAX. AB 0.1 B 1) Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. GPT09113 Figure 8 PG-TO263-5 Data Sheet 23 Rev. 1.1, 2008-09-24 TLE42754 Package Outlines 0.35 x 45˚ Stand Off (1.45) 1.7 MAX. 3.9 ±0.11) 0.1 C D 0 ... 0.1 0.19 +0.06 0.08 C 6 ±0.2 0.65 0.25 ±0.05 2) C 0.64 ±0.25 D 0.2 8˚ MAX. M 0.15 M C A-B D 14x D 8x A 14 8 Bottom View 3 ±0.2 1 7 1 7 B 0.1 C A-B 2x Exposed Diepad 14 8 4.9 ±0.11) Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Does not include dambar protrusion PG-SSOP-14-1,-2,-3-PO V02 Figure 9 PG-SSOP-14 exposed pad Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Data Sheet 24 2.65 ±0.2 Dimensions in mm Rev. 1.1, 2008-09-24 TLE42754 Revision History 7 Version 1.1 Revision History Date 2008-09-24 Changes data sheet updated with new package variant in PG-SSOP-14 exposed pad: In “Overview” on Page 2 package graphic and sales name with marking added In Table 4.3 “Thermal Resistance” on Page 9 values for package PG-SSOP-14 exposed pad added In “Package Outlines” on Page 22 Outlines for package PG-SSOP-14 exposed pad added 1.0 2008-05-29 final data sheet Data Sheet 25 Rev. 1.1, 2008-09-24 Edition 2008-09-24 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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