T LE4906-3K
High Precision Hall-Effect Switch
Datasheet
Rev 1.0, 2010-12
Sensors
Edition 2010-12 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
TLE4906-3K
TLE4906-3K High Precision Hall Effect Switch Revision History: 2010-12, Rev 1.0 Previous Version: Page Subjects (major changes since last revision)
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Datasheet
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Rev 1.0, 2010-12
TLE4906-3K
Table of Contents
Table of Contents
1 1.1 1.2 1.3 2 2.1 2.2 2.3 2.4 2.5 2.6 3 3.1 3.2 3.3 4 4.1 4.2 4.3 Product Description 3 Overview 3 Features 3 Target Applications 3 Functional Description 4 General 4 Pin Configuration (top view) 4 Pin Description 4 Block Diagram 5 Functional Block Description 5 Application circuit 7 Specification 8 Absolute Maximum Ratings 8 Operating Range 9 Electrical and Magnetic Characteristics 10 Package Information 12 Package Outline 12 Distance between Chip and Package 13 Package Marking 13
Datasheet
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Rev 1.0, 2010-12
High Precision Hall-Effect Switch
TLE4906-3K
1
1.1
Product Description
Overview
The TLE4906-3K is a high precision Hall effect switch with highly accurate switching thresholds for operating temperatures up to 150°C.
1.2
• • • • • • • • • •
Features
2.7V to 24V supply voltage Operation from unregulated power supply High sensitivity and high stability of the magnetic switching points High resistance to mechanical stress by Active Error Compensation Reverse battery protection (-18V) Superior temperature stability Low jitter (typ. 1µs) High ESD performance (± 4kV HBM) Digital output signal SMD package SC59 (SOT23 compatible)
1.3
Target Applications
Target applications for TLE4906-3K are all automotive applications which require a high precision Hall switch for position sensing with a operating temperature range from -40°C to +150°C. The TLE4906-3K is a unipolar Hall switch which is actuated with the south pole of a magnet. A magnetic field above the threshold BOP switches the output to low (output transistor ON) and a magnetic field below the release point BRP back to high (transistor OFF).
Product Name TLE4906-3K Datasheet
Product Type Unipolar Hall Switch 3
Ordering Code SP000868844
Package SC59 Rev 1.0, 2010-12
TLE4906-3K
Functional Description
2
2.1
Functional Description
General
The TLE4906-3K is an integrated circuit Hall-effect sensor designed specifically for highly accurate applications. Precise magnetic switching points and high temperature stability are achieved by active compensation circuits and chopper techniques on chip.
2.2
Pin Configuration (top view)
Center of Sensitive Area
3
0.8
± 0.15
1
1.5
± 0.15
2
SC59
Figure 1 Pin Configuration and Center of Sensitive Area
2.3
Table 1 Pin No. 1 2 3
Pin Description
Pin Description SC59 Symbol VDD Q GND Function Supply voltage Output Ground Comment
Datasheet
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TLE4906-3K
Functional Description
2.4
Block Diagram
VDD
Voltage Regulator reverse polarity protected
Bias and Compensation Circuits
Oscillator and Sequencer
Ref
Q
Amplifier Chopped Hall Probe
Low Pass Filter
Comparator with Hysteresis
GND
Figure 2
Functional Block Diagram
2.5
Functional Block Description
The chopped Hall IC Switch comprises a Hall probe, bias generator, compensation circuits, oscillator and output transistor. The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the temperature behavior and reduce technology variations. The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall probe caused by molding and soldering processes and other thermal stresses in the package. This chopper technique together with the threshold generator and the comparator ensure high accurate magnetic switching points.
Datasheet
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TLE4906-3K
Functional Description
B OP B RP
Applied Magnetic Field
td VQ 90% tf
td tr
10%
Figure 3
Timing Diagram
VQ
B 0 Brp Bop
Figure 4
Output Signal
Datasheet
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TLE4906-3K
Functional Description
2.6
Application circuit
It is recommended to use a series resistor RS with 200Ω and a capacitor of CDD = 4.7nF for protection against overvoltage and transients on the supply line. A capacitor CQ at the Q pin protects the IC from disturbances coupled to the output. A pull-up resistor RQ is also required for the output pin Q.
Vs
Rs = 200Ω RQ = 1.2kΩ
VDD
TLE4906-3K
CDD = 4.7nF
Q CQ = 4.7nF
GND
Figure 5 Application circuit
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TLE4906-3K
Specification
3
3.1
Table 2 Parameter
Specification
Absolute Maximum Ratings
Absolute Maximum Rating Parameters Tj = -40°C to 150°C Symbol VDD VS VS IDD VQ IQ Tj -18 -18 -18 -50 -0.7 -0.7 -50 – – – – -40 – Limit Values Min. Max. 18 24 26 50 18 26 50 155 165 175 195 150 V for 1h, RS ≥ 200Ω for 5min, RS ≥ 200Ω mA V for 5min @ 1.2kΩ pull up mA °C for 2000h (not additive) for 1000h (not additive) for 168h (not additive) for 3 x 1h (additive) Unit Note / Test Condition
Supply voltage
Supply current through protection device Output voltage Continuous output current Junction temperature
Storage temperature Magnetic flux density
TS B
°C
unlimited mT
Note: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Table 3 Parameter ESD Voltage ESD Protection1) Symbol VESD Limit Values Min. Max. ±4 kV HBM, R = 1.5kΩ, C = 100pF TA = 25°C Unit Note / Test Condition
1) Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 3015.7
Datasheet
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TLE4906-3K
Specification
3.2
Operating Range
The following operating conditions must not be exceeded in order to ensure correct operation of the TLE4906-3K . All parameters specified in the following sections refer to these operating conditions unless otherwise mentioned. Table 4 Parameter Supply voltage Output voltage Junction temperature Output current Operating Conditions Parameters Symbol Min. VDD VQ Tj IQ 2.7 -0.7 -40 0 Values Typ. Max. 18 18 150 20 V V °C mA Unit Note / Test Condition
Datasheet
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TLE4906-3K
Specification
3.3
Electrical and Magnetic Characteristics
Product characteristics involve the spread of values guaranteed within the specified voltage and ambient temperature range. Typical characteristics are the median of the production. Table 5 Parameter Supply current Reverse current Output saturation voltage Output leakage current Output fall time Output rise time Chopper frequency Switching frequency Delay time
3) 4)
General Electrical Characteristics1) Symbol Min. IDD ISR VQSAT IQLEAK tf tr fOSC fSW td tQJ tPON
6)
Values Typ. 4 0.2 0.3 0.05 0.02 0.4 320 13 1 13 100 Max. 6 1 0.6 10 1 1 15 2)
Unit mA mA V µA µs µs kHz kHz µs
Note / Test Condition VDD = 2.7V ... 18V VDD = -18V IQ = 20mA for VQ = 18V RQ = 1.2kΩ; CQ = 50pF see Figure 3
2 0 0 -
Output jitter
µsRMS typical value for square wave signal with 1kHz µs K/W VDD ≥ 2.7V SC59
Power-on time5) Thermal resistance
RthJA
1) over operating range, unless otherwise specified. Typical values correspond to VDD = 12V and TA = 25°C 2) To operate the sensor at the max. switching frequency, the value of the magnetic signal amplitude must be 1.4 times higher than for static fields. This is due to the -3dB corner frequency of the low pass filter in the signal path. 3) Systematic delay between magnetic threshold reached and output switching. 4) Jitter is the unpredictable deviation of the output switching delay. 5) Time from applying VDD ≥ 2.7V to the sensor until the output state is valid. 6) Thermal resistance from junction to ambient.
Calculation of the ambient temperature: e.g. for VDD = 12.0V, IDDtyp = 4mA, VQSATtyp = 0.3V and IQ = 20mA Power dissipation PDIS = 54.0mW In TA = Tj - (RthJA x PDIS) = 175°C - (100K/W x 0.054W) Resulting max. ambient temperature: TA = 169.6°C
Datasheet
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TLE4906-3K
Specification
Table 6 Parameter
Magnetic Characteristics1)
Symbol BOP
Tj[°C] Min. -40 25 150 -40 25 150 -40 25 150 21.6 20.0 16.8 17.1 15.9 13.3 4.4 4.1 3.5 -
Values Typ. 30.2 28.0 23.8 24.2 22.5 19.1 6.0 5.5 4.7 -1200 20 Max. 38.8 36.0 30.8 31.2 29.1 24.9 7.4 6.9 5.9 -
Unit mT
Note / Test Condition
Operating point
Release point
BRP
mT
Hysteresis
BHYS
mT
Temperature compensation of magnetic thresholds Repeatability of magnetic thresholds2)
TC BREP
ppm/°C µTRMS typ. value for ΔB/Δt > 12mT/ms
1) over operating range, unless otherwise specified. Typical values correspond to VDD = 12V and TA = 25°C. 2) BREP is equivalent to the noise constant
Note: Typical characteristics specify mean values expected over the production spread Field Direction Definition Positive magnetic fields are defined with the south pole of the magnet to the branded side of package.
N S Branded Side
Figure 6
Definition of magnetic field direction
Datasheet
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Rev 1.0, 2010-12
TLE4906-3K
Package Information
4
4.1
Package Information
Package Outline
1.1 ±0.1 3 ±0.1 3x0.4 +0.05 -0.1 3 0.1 M 0.1 0.15 MAX. 0.2
+0.1
0.45 ±0.15
1 0.95
2 0.95 (0.55)
M
+0.1 0.15 -0.05
0.1
0˚...8˚ MAX.
GPS09473
Figure 7
SC59 Package Outline (all dimensions in mm)
The following picture shows a recommendation for the PCB layout.
0.8 0.9
0.8 1.4 min 1.2 0.8
12
1.3
1.6 +0.15 -0.3
2.8 +0.2 -0.1
0.9
1.2 0.8
Figure 8
Wave Soldering Reflow Soldering SC59 Footprint (SOT23 compatible, all dimensions in mm)
Datasheet
1.4 min
Rev 1.0, 2010-12
1.6
TLE4906-3K
Package Information
4.2
Distance between Chip and Package
Branded Side d d: Distance chip to upper side of IC SC59: 0.56 ±0.1 mm
A EA03244
Figure 9
Distance between chip and package SC59
4.3
Package Marking
063
Year (y) = 0...9 Month (m) = 1...9, O - October N - November D - December
Figure 10
Marking of TLE4906-3K
Datasheet
ym
13
Rev 1.0, 2010-12
www.infineon.com
Published by Infineon Technologies AG
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