TLE4916-1K

T LE4916-1K Low Power Automotive Hall Switch Datasheet Rev.1.0, 2010-02-23 Sense & Control Edition 2010-02-23 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. TLE4916-1K TLE4916-1K Low-Power Automotive Hall Switch Revision History: 2010-02-23, Rev.1.0 Previous Version: Page Subjects (major changes since last revision) We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? 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Please send your proposal (including a reference to this document) to: sensors@infineon.com Datasheet 1 Rev.1.0, 2010-02-23 TLE4916-1K Table of Contents Table of Contents 1 1.1 1.2 1.3 2 2.1 2.2 2.3 2.4 2.5 3 3.1 3.2 3.3 3.4 4 4.1 4.2 4.3 4.4 Product Description 3 Overview 3 Features 3 Target Applications 3 Functional Description 4 General 4 Pin Configuration (top view) 4 Pin Description 4 Block Diagram 5 Functional Block Description 5 Specification 7 Application Circuit 7 Absolute Maximum Ratings 8 Operating Range 8 Electrical and Magnetic Characteristics 9 Package Information 11 Package Outline SC59 11 Footprint 12 Distance between Chip and Package 13 Package Marking 13 Datasheet 2 Rev.1.0, 2010-02-23 Low-Power Automotive Hall Switch TLE4916-1K TLE4916-1K 1 1.1 Product Description Overview The TLE4916-1K is an integrated Hall-Effect Sensor in a SMD package designed specifically to meet the requirements of low-power automotive and industrial applications with operating voltages of 2.4V - 5.0V. A chopped measurement principle provides high stability switching thresholds for operating temperatures between -40°C and 125°C. 1.2 • • • • • • • • Features Micro power design 2.4V to 5.0V operation High sensitivity and high stability of the magnetic switching points High resistance to mechanical stress by Active Error Compensation High ESD performance (± 4kV HBM) Digital output signal SMD package SC59 (SOT23 compatible) RoHS compliant (Pb free package) 1.3 Target Applications Target applications for TLE4916-1K are all automotive and industrial applications which require a low-power Hall switch to save power consumption. Due to its low average supply current of typical 4µA the sensor is ideally suited for battery powered systems or applications with a stand-by mode. For example, the Hall switch can be used to provide a wake-up signal for other systems which are in a sleep mode by detecting a change in the magnetic field, thus reducing overall current consumption. Product Name TLE4916-1K Datasheet Product Type Low Power Hall Switch 3 Ordering Code SP000649954 Package PG-SC59-3-4 Rev.1.0, 2010-02-23 TLE4916-1K Functional Description 2 2.1 Functional Description General The Low Power Hall IC Switch is comprised of a Hall probe, bias generator, compensation circuits, oscillator, output latch and a n-channel open drain output transistor. The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the temperature behavior and reduce influence of technology variations. The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall probe caused by molding and soldering processes and other thermal stresses in the package. This chopper technique together with the threshold generator and the comparator ensure highly accurate magnetic switching points. Very low power consumption is achieved with a timing scheme controlled by an oscillator and a sequencer. This circuitry activates the sensor for 50µs (typical operating time) sets the output state after sequential questioning of the switch points and latches it with the beginning of the following standby phase (max. 120ms). In the standby phase the average current is typically reduced to 3.5µA. Because of the long standby time compared to the operating time the overall averaged current is only slightly higher than the standby current. The output transistor can sink up to 1 mA with a maximal saturation voltage VQSAT 2.2 Pin Configuration (top view) Center of Sensitive Area 3 0.8 ± 0.15 1 1.5 ± 0.15 2 SC59 Figure 1 Pin Configuration and Center of Sensitive Area 2.3 Pin Description Table 1 Pin No. 1 2 3 Pin Description Symbol VS Q GND Function Supply voltage Output Ground Comment Datasheet 4 Rev.1.0, 2010-02-23 TLE4916-1K Functional Description 2.4 Block Diagram VS Bias andCompensation Circuits Active Error Compensation Oscillator and Sequencer Threshold Generator Q Logic Chopped Hall Probe Amplifier Comparator with Hysteresis GND Figure 2 Functional Block Diagram 2.5 Functional Block Description The TLE4916-1K is an integrated Hall-Effect Sensor designed specifically to meet the requirements of low-power applications with operating voltages of 2.4V - 5.0V. Precise magnetic switching points and high temperature stability are achieved through the unique design of the internal circuit. An onboard clock scheme is used to reduce the average operating current of the IC. During the operating phase the IC compares the actual magnetic field detected to the internally compensated switching points. The output Q is switched at the end of each operating phase. During the stand-by phase the output stage is latched and the current consumption of the device reduced to 4µA µA (typ. value). The IC switching behaviour is designed as a latch, i.e. it can be switched on (Q = LO) with the south pole of a magnet and switched off (Q = HI) with the north pole. . Datasheet 5 Rev.1.0, 2010-02-23 TLE4916-1K Functional Description IS I SOPAVG Operating Time I SAVG I SSTB Standby Time to p 50 μs tstb 70ms Latch Output t Figure 3 Timing Diagram VQ B B rp 0 Bop Figure 4 Output Signal Datasheet 6 Rev.1.0, 2010-02-23 TLE4916-1K Specification 3 3.1 Specification Application Circuit For operating the sensor a pull-up resistor is required. A ceramic bypass capacitor at Vs to GND is recommended. Note: The size of the pull-up resistor increases the overall current consumption as additional current is flowing through this resistor. Vs CS = 100nF TLE4916-1K RQ = 5kΩ Q GND Figure 5 Application Circuit Datasheet 7 Rev.1.0, 2010-02-23 TLE4916-1K Specification 3.2 Absolute Maximum Ratings Table 2 Parameter Absolute Maximum Rating Parameters Symbol VS IS VQ IQ Tj Limit Values Min. Max. 5.5 2.5 5.5 2 125 150 195 100 V mA V mA °C for 5000h (not additive) for 2000h (not additive) for 3 x 1h (additive) -0.3 -1 -0.3 -1 – – – Unit Note / Test Condition Supply voltage Supply current Output voltage Output current Junction temperature Magnetic flux density Thermal resistance SC59 B unlimited mT K/W Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Table 3 Parameter ESD Voltage ESD Protection1) Symbol VESD ±4 Limit Values Min. Max. kV HBM, R = 1.5kΩ, C = 100pF TA = 25°C Unit Note / Test Condition 1) Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 3015.7 3.3 Operating Range The following operating conditions must not be exceeded in order to ensure correct operation of the TLE4916-1K. All parameters specified in the following sections refer to these operating conditions unless otherwise mentioned. Table 4 Parameter Supply voltage Output voltage Junction temperature Operating Condition Parameters Symbol Min. VS VQ Tj 2.4 -0.3 -40 Values Typ. 2.7 2.7 Max. 5.0 5.0 125 V V °C Unit Note / Test Condition Datasheet 8 Rev.1.0, 2010-02-23 TLE4916-1K Specification 3.4 Electrical and Magnetic Characteristics Product characteristics involve the spread of values guaranteed within the specified voltage and ambient temperature range. Typical characteristics are the median of the production. The specification listed in Table 5 are valid in combination with the application circuit shown in Figure 5 unless other conditions are stated. Table 5 Parameter Average supply current General Electrical Characteristics1) Symbol Min. ISAVG 1 1 1 Average supply current during ISOPAVG operating time Transient peak supply current during operating time2) ISOPT 0.5 – 1 1 1 Output saturation voltage Output leakage current Output fall time Output rise time Operating time Stand-by time Duty cycle VQSAT IQLEAK tf tr top tstb top/tstb – – – – 15 – – – Values Typ. 4 4 4 1.1 – 3.5 3.5 3.5 0.13 0.01 0.1 0.5 50 70 70 0.07 Max. 10 11 13 2.5 2.5 9.5 10.5 12.5 0.4 1 1 1 93 120 100 – % V µA µs µs µs ms -40°C ≤ Tj ≤ 0°C 0°C ≤ Tj ≤ 125°C RL = 2.7kΩ, CL = 10pF RL = 2.7kΩ, CL = 10pF mA mA µA t < 100ns Vs ≤ 3.3V -40°C ≤ Tj ≤ 125°C Vs ≤ 5.0V -40°C ≤ Tj ≤ 85°C µA Vs ≤ 3.3V -40°C ≤ Tj ≤ 125°C Vs ≤ 5.0V -40°C ≤ Tj ≤ 85°C Unit Note / Test Condition Vs ≤ 5.0V 85°C ≤ Tj ≤ 125°C Supply current during stand-by ISSTB time Vs ≤ 5.0V 85°C ≤ Tj ≤ 125°C IQ = 1mA 1) Over operating range, unless otherwise specified. Typical values correspond to VS = 2.7V and TA = 25°C 2) Transient peak ISOPT occurs on top of ISOPAVG Datasheet 9 Rev.1.0, 2010-02-23 TLE4916-1K Specification Table 6 Parameter Magnetic Characteristics1) Symbol Min. BOP BRP BHYS 2 -5 4 – Values Typ. 3.5 -3.5 7 -700 Max. 5 -2 10 – Unit mT mT mT ppm/° C Note / Test Condition Operating point Release point Hysteresis Temperature compensation of TC magnetic thresholds 1) Over operating range, unless otherwise specified. Typical values correspond to VS = 2.7V and TA = 25°C. Field Direction Definition Positive magnetic fields are defined with the south pole of the magnet to the branded side of package. N S Branded Side Figure 6 Definition of magnetic field direction Datasheet 10 Rev.1.0, 2010-02-23 TLE4916-1K Package Information 4 4.1 Package Information Package Outline SC59 1.1 ±0.1 3 ±0.1 3x0.4 +0.05 -0.1 3 2.8 +0.2 -0.1 0.1 0.1 M 0.45 ±0.15 0.15 MAX. 0.2 +0.1 1 0.95 2 0.95 (0.55) 0.1 M +0.1 0.15 -0.05 0˚...8˚ MAX. GPS09473 Figure 7 SC59 Package Outline (All dimensions in mm) Datasheet 11 Rev.1.0, 2010-02-23 1.6 +0.15 -0.3 TLE4916-1K Package Information 4.2 Footprint 0.8 0.9 0.8 1.4 min 1.2 0.8 Wave Soldering 12 1.3 0.9 1.2 0.8 Reflow Soldering Figure 8 Footprint SC59 Datasheet 1.4 min Rev.1.0, 2010-02-23 1.6 TLE4916-1K Package Information 4.3 Distance between Chip and Package Branded Side d d: Distance chip to upper side of IC d = 0.56 ±0.1 mm Figure 9 Distance between chip and package 4.4 Package Marking 16 1 06 Figure 10 Y ear (y) = 0...9 Month (m) = 1...9, o - October n - November d - December Marking of TLE4916-1K Datasheet ym 13 Rev.1.0, 2010-02-23 www.infineon.com Published by Infineon Technologies AG