TLE4998P3CE1200

D ata Sheet, Rev 1.1, September 2009 TLE4998P3C E1200 P rogrammable Linear Hall Sensor Sensors Never stop thinking. Edition 2009-09 Published by Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany © Infineon Technologies AG 2009. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. TLE4998P3C E1200 Revision History: Page 12 Page 25 General 2009-09 Rev 1.1 Previous Version: Data Sheet Rev 1.0 Table 4: Footnote 3) adapted Table 16: Footnote 1) and 2) adapted Package nomenclature changed to PG-SSO-3-92 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: sensors@infineon.com TLE4998P3C E1200 1 1.1 1.2 1.3 2 2.1 2.2 2.3 2.4 3 4 5 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Target Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Principle of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transfer Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 6 6 7 7 7 8 9 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electrical, Thermal and Magnetic Parameters . . . . . . . . . . . . . . . . . . . 12 Calculation of the Junction Temperature . . . . . . . . . . . . . . . . . . . . . . 14 Magnetic Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Signal Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Magnetic Field Path . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Temperature Compensation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Magnetic Field Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gain Setting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Offset Setting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DSP Input Low Pass Filter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PWM Output Fequency Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 16 16 17 18 18 19 21 23 6 6.1 6.2 6.3 6.4 6.5 6.6 7 7.1 7.2 8 8.1 9 9.1 9.2 9.3 9.4 10 11 Error Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Voltages Outside the Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 EEPROM Error Correction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Temperature Compensation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Parameter Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Calibration Data Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Programming Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Data transfer protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Programming of sensors with common supply lines . . . . . . . . . . . . . . . . . 27 28 29 29 29 Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Data Sheet 4 Rev 1.1, 2009-09 Programmable Linear Hall Sensor TLE4998P3C E1200 1 1.1 Overview Features • PWM open-drain output signal • The TLE4998P3C E1200 is based on the TLE4998P3C with an extended gain range • 20-bit Digital Signal Processing • Digital temperature compensation • 12-bit overall resolution • Operates within automotive temperature range • Low drift of output signal over temperature and lifetime PG-SSO-3-9x • Programmable parameters stored in EEPROM with single bit error correction: – PWM output frequency – Magnetic range and magnetic sensitivity (gain), polarity of the output slope – Offset – Bandwidth – Clamping levels – Customer temperature compensation coefficients – Memory lock • Re-programmable until memory lock • Supply voltage 4.5 - 5.5 V (4.1 - 16 V extended range) • Operation between -200 mT and +200 mT within three ranges • Reverse-polarity and overvoltage protection for all pins • Output short-circuit protection • On-board diagnostics (overvoltage, EEPROM error) • Digital readout of the magnetic field and internal temperature in calibration mode • Programming and operation of multiple sensors with common power supply • Two-point calibration of magnetic transfer function without iteration steps • High immunity against mechanical stress, EMC, ESD • Package with two capacitors: 47nF (VDD to GND) and 4.7nF (OUT to GND) Type Marking Ordering Code SP000597466 Package PG-SSO-3-92 TLE4998P3C E1200 98PC12 Data Sheet 5 Rev 1.1, 2009-09 TLE4998P3C E1200 Overview 1.2 Target Applications • Robust replacement of potentiometers – No mechanical abrasion – Resistant to humidity, temperature, pollution and vibration • Linear and angular position sensing in automotive applications such as pedal position, suspension control, valve or throttle position, headlight levelling, and steering angle • High-current sensing for battery management, motor control, and electronic fuses 1.3 Pin Configuration Figure 1 shows the location of the Hall element in the chip and the distance between the Hall probe and surface of the package. 2.67 B A 1.53 0.2 B d Center of sensitive area Branded Side Hall-Probe 0.2 A 1 2 3 d: Distance chip to upper side of IC 0.3 ±0.05 mm AEP03538 Figure 1 Table 1 Pin No. 1 2 3 TLE4998P3C E1200 Pin Configuration and Hall Cell Location Pin Definitions and Functions Symbol Function Supply voltage / programming interface Ground Output / programming interface VDD GND OUT Data Sheet 6 Rev 1.1, 2009-09 TLE4998P3C E1200 General 2 2.1 General Block Diagram Figure 2 is a simplified block diagram. VDD Interface Bias Supply EEPROM A D spinning H ALL OUT DSP Temp. Sense A D PWM GND ROM Figure 2 Block Diagram 2.2 Functional Description The linear Hall IC TLE4998P3C E1200 has been designed specifically to meet the requirements of highly accurate rotation and position detection, as well as for current measurement applications. Two capacitors are integrated on the lead frame, making this sensor especially suitable for applications with demanding EMC requirements. The sensor provides a digital PWM signal, which is ideally suited for direct decoding by any unit measuring a duty cycle of a rectangular signal (usually a timer/capture unit in a microcontroller). The output stage is an open-drain driver pulling the output pad to low only. Therefore, the high level must be obtained by an external pull-up resistor. This output type has the advantage that the receiver may use even a lower supply voltage (e.g. 3.3 V). In this case, the pull-up resistor must be connected to the given receiver supply. Data Sheet 7 Rev 1.1, 2009-09 TLE4998P3C E1200 General The IC is produced in BiCMOS technology with high voltage capability, also providing reverse polarity protection. Digital signal processing, using a 16-bit DSP architecture together with digital temperature compensation, guarantees excellent long-time stability as compared to analog compensation methods. While the overall resolution is 12 bits, some internal stages work with resolutions up to 20 bits. The PWM output frequency can be selected within the range of 122 Hz up to 1953 Hz. 2.3 Principle of Operation • A magnetic flux is measured by a Hall-Effect cell • The output signal from the Hall-Effect cell is converted from Analog to Digital signals • The chopped Hall-Effect cell and continuous-time A/D conversion ensure a very low and stable magnetic offset • A programmable Low-Pass filter reduces the noise • The temperature is measured and A/D converted, too • Temperature compensation is done digitally using a second order function • Digital processing of output value is based on zero field and sensitivity value • The output value range can be clamped by digital limiters • The final output value is transferred in a rectangular, periodic signal with varying duty cycle (Pulse Width Modulation) • The duty cycle is proportional to the 12-bit output value Data Sheet 8 Rev 1.1, 2009-09 TLE4998P3C E1200 General 2.4 Transfer Functions The examples in Figure 3 show how different magnetic field ranges can be mapped to the desired output value ranges. • Polarity mode: – Bipolar: Magnetic fields can be measured in both orientations. The limit points do not necessarily have to be symmetrical around the zero field point – Unipolar: Only North- or South-oriented magnetic fields are measured • Inversion: The gain values can be set positive or negative. B (mT) 50 duty (%) B (mT) duty (%) B (mT) duty (%) 100 100 100 100 200 0 0 0 0 V OUT 0 0 V OUT -50 -100 -200 Example 1: - Bipolar Example 2: - Unipolar - Big offset Example 3: - Bipolar - Inverted (neg. gain) Figure 3 Examples of Operation Data Sheet 9 Rev 1.1, 2009-09 TLE4998P3C E1200 Maximum Ratings 3 Table 2 Parameter Maximum Ratings Absolute Maximum Ratings Symbol Limit Values min. max. 150 170 18 15 184) unlimited 8 1) Unit °C °C V mA mA V T kV Notes Storage temperature Junction temperature Voltage on VDD pin with respect to ground Supply current @ overvoltage VDD max. Reverse supply current @ VDD min. TST TJ VDD IDDov IDDrev - 40 - 40 -18 -1 -13) - 2) Voltage on output pin with OUT respect to ground Magnetic field ESD protection 1) 2) BMAX VESD According HBM JESD22-A114-B 5) For limited time of 96 h. Depends on customer temperature lifetime cycles. Please ask Infineon for support Higher voltage stress than absolute maximum rating, e.g. 150% in latch-up tests is not applicable. In such cases, Rseries ≥100Ω for current limitation is required IDD can exceed 10 mA when the voltage on OUT is pulled below -1 V (-5 V at room temperature) 3) 4) 5) VDD = 5 V, open drain permanent low, for max. 10 min 100 pF and 1.5 kΩ Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Data Sheet 10 Rev 1.1, 2009-09 TLE4998P3C E1200 Operating Range 4 Operating Range The following operating conditions must not be exceeded in order to ensure correct operation of the TLE4998P3C E1200. All parameters specified in the following sections refer to these operating conditions, unless otherwise indicated. Table 3 Parameter Operating Range Symbol Limit Values min. max. 5.5 16 5 125 1504) 2) Unit V V V kΩ mA °C Notes Supply voltage Output pull-up voltage3) Load resistance3) Output current3) Junction temperature 1) 2) 3) 4) VDD OUT RL IOUT TJ 4.5 4.1 1 0 - 40 1) Extended Range 18 for 5000 h for 1000 h not additive For reduced output accuracy For supply voltages > 12V, a series resistance Rseries ≥ 100Ω is recommended Output protocol characteristics depend on these parameters, RL must be according to max. output current For reduced magnetic accuracy; extended limits are taken for characteristics Note: Keeping signal levels within the limits specified in this table ensures operation without overload conditions. Data Sheet 11 Rev 1.1, 2009-09 TLE4998P3C E1200 Electrical, Thermal and Magnetic Parameters 5 Table 4 Parameter Electrical, Thermal and Magnetic Parameters Electrical Characteristics Symbol Limit Values min. typ. max. 122 0 3 19 2 47 4.7 6 95 100 8 Unit Notes nF nF % mA mA VOUT = 5V, max. 10 minutes Ceramic Ceramic Programmable1) Programmable VDD-GND capacitor OUT-GND capacitor PWM output frequency Output duty cycle range Supply current Output current @ OUT shorted to supply lines Thermal resistance Power-on time 2) CVDD CL fPWM DYPWM IDD IOUTsh RthJA RthJC tPon VDDpon ZOUT tfall trise VOUTsat OUTnoise 1953 Hz 190 41 0.7 15 3.6 30 20 0.3 0.2 1 2 20 4 44 4 0.6 0.4 2.5 K/W Junction to Air K/W Junction to Case ms V kΩ µs µs V 3) ∆ DYPWM ≤ ± 5% ∆ DYPWM ≤ ± 1% Power-on reset level Output impedance Output fall time Output rise time Output low saturation voltage Output noise (rms) 1) 2) VOUT 4.5 V to 0.5 V4) VOUT 0.5 V to 4.5 V4)5) IOUTsink = 5 mA IOUTsink = 2.2 mA LSB12 6) Internal RC oscillator variation +/- 20% Response time to set up output duty cycle at power-on when a constant field is applied (fPWM=1953Hz). The first value given has a ± 5% error, the second value has a ± 1% error Output impedance is measured ∆VOUT/∆IOUT (∆VOUT=18V ... 4.2V) at VDD = 5V, open-drain high state For VDD = 5 V, RL = 2.2 kΩ, CL = 4.7 nF (CL in package), at room temperature, not including capacitor tolerance or influence of external circuitry 3) 4) Data Sheet 12 Rev 1.1, 2009-09 TLE4998P3C E1200 Electrical, Thermal and Magnetic Parameters 5) Depends on external RL and additional CL V OUT *) tPWM tlow thigh VD D 90% V D D DY = thigh/tPWM 10% V D D V OUTsat tfall 6) trise t *) RL to V DD assumed Range 100 mT, Gain 2.23, internal LP filter 244 Hz, B = 0mT, T = 25°C Data Sheet 13 Rev 1.1, 2009-09 TLE4998P3C E1200 Electrical, Thermal and Magnetic Parameters Calculation of the Junction Temperature The total power dissipation PTOT of the chip increases its temperature above the ambient temperature. The power multiplied by the total thermal resistance RthJA (Junction to Ambient) leads to the final junction temperature. RthJA is the sum of the addition of the values of the two components Junction to Case and Case to Ambient. RthJA = RthJC + RthCA TJ = TA + ∆T ∆T = RthJA x PTOT = RthJA x ( VDD x IDD + VOUT x IOUT ) Example TLE4998P3C E1200 (assuming no load on Vout): – VDD = 5 V – IDD = 8 mA – ∆T = 190 [K/W] x (5 [V] x 0.008 [A] + 0 [VA] ) = 7.6 K IDD , IOUT > 0, if direction is into IC For moulded sensors, the calculation with RthJC is more adequate. Magnetic Parameters Table 5 Parameter Sensitivity Sensitivity error band over temperature Magnetic field range Integral nonlinearity Magnetic offset error Magnetic offset error over temperature Magnetic hysteresis 1) 2) Magnetic Characteristics Symbol Limit Values min. typ. ± 1.22) ± 0.8 ± 100 ± 30 ± 100 5) Unit max. ± 48 ± 1.4 ± 200 ± 0.1 ± 400 ± 200 ± 400 10 %/mT % mT %MFR µT µT Notes 3) 4) S1) SE MFR Inl BOS BOS ± 0.2 ± 50 - See Figure 4 Programmable 6) 7)9) 8)9) ± 0.01 -40°C to 130°C 9) 130°C to 150°C 9) See Figure 5 10) BHYS - µT Defined as ∆DYPWM / ∆B Typical default sensitivity in range +/-100mT (not guaranteed, mG=0) Data Sheet 14 Rev 1.1, 2009-09 TLE4998P3C E1200 Electrical, Thermal and Magnetic Parameters 3) 4) 5) 6) 7) 8) 9) 10) Programming see Chapter 6.2 Residual error band after Infineon temperature pre-calibration, characterization at 0h This range is also used for temperature and offset pre-calibration of the IC Depending on offset and gain settings, the output may already be saturated at lower fields Gain setup is 1.0 In operating temperature range and over lifetime Measurement condition at ± 100 mT range Measured in 100 mT range, Gain = 1, room temperature ∆ S~ S(T)/S 0-1 [%] +1.4 0 -40 -1.4 … maximum … typical S0 at 25°C 150 Tj Figure 4 Sensitivity error band over temperature 400 B OS [µT] 200 0 -40 B OS at 25 °C 130 150 Tj -200 … maximum … typical -400 Figure 5 Offset error band over temperature Data Sheet 15 Rev 1.1, 2009-09 TLE4998P3C E1200 Signal Processing 6 Signal Processing The flow diagram in Figure 6 shows the data-processing algorithm. Range Hall Sensor Temperature Sensor A D LP Gain + Limiter ( Clam p) X X Protocol Generation out Offset TC 2 X X A D + TC 1 1 X + Stored in EEPROM Memory -T0 Temperature Compensation Figure 6 Signal Processing Flow Magnetic Field Path • The analog output signal of the chopped Hall-effect cell is converted to a digital signal in the continuous-time A/D converter. The range of the chopped A/D converter can be set in several steps (see Table 6). This gives a suitable level for the A/D converter • After the A/D conversion, a digital-low pass filter reduces the band width (Table 10). • A multiplier amplifies the value depending on the gain (see Table 8) and temperature compensation settings • The offset value is added (see Table 9) • A limiter reduces the resulting signal to 12 bits and feeds the Protocol Generation stage Temperature Compensation (Details are given in Chapter 8) • The output signal of the temperature cell is also A/D converted • The temperature is normalized by subtraction of the reference temperature T0 value (zero point of the quadratic function) Data Sheet 16 Rev 1.1, 2009-09 TLE4998P3C E1200 Signal Processing • The linear path is multiplied by the TC1 value • In the quadratic path, the temperature difference to T0 is squared and multiplied by the TC2 value • Both path outputs are added together and multiplied by the Gain value from the EEPROM 6.1 Magnetic Field Ranges The working range of the magnetic field defines the input range of the A/D converter. It is always symmetrical around the zero field point. Any two points in the magnetic field range can be selected to be the end points of the output value. The output value is represented wihtin the range between the two points. In the case of fields higher than the range values, the output signal may be distorted. The range must be set before the calibration of offset and gain. Table 6 Range Low Mid High 1) Range Setting Range in mT1) ± 50 ± 100 ± 200 Parameter R 3 1 0 Ranges do not have a guaranteed absolute accuracy. The temperature pre-calibration is performed in the mid range (100 mT). Setting R = 2 is not used, internally changed to R = 1 Table 7 Parameter Register size Range Symbol Limit Values min. max. 2 bit Unit Notes R Data Sheet 17 Rev 1.1, 2009-09 TLE4998P3C E1200 Signal Processing 6.2 Gain Setting The sensitivity is defined by the range and the gain setting. The output of the A/D converter is multiplied by the Gain value. Table 8 Parameter Register size Gain range Gain Symbol Limit Values min. max. 15 2 - 32 31.998 244.14 Gain quantization steps ∆Gain 488.28 976.56 1953.12 1) Unit bit bit - Notes Unsigned integer value Unsigned integer value 2)3) G mG1) Gain for mG=0 ppm for mG=1 for mG=2 for mG=3 The register mG is used as digital multiplicator. Relevant sensor characteristics will change in accordant ratio at the output. For Gain values between - 0.5 and + 0.5, the numerical accuracy decreases. To obtain a flatter output curve, a higher range setting should be selected A Gain value of +1.0 corresponds to typical 0.8%/mT sensitivity (100 mT range, not guaranteed). It is crucial to do a final calibration of each IC within the application using the Gain/DYOS value 2) 3) The Gain value can be calculated by : ( G – 16384 ) Gain = ----------------------------- ⋅ 2 mG 4096 6.3 Table 9 Parameter Offset Setting Offset Symbol Limit Values min. max. Unit bit % % Notes Unsigned integer value Virtual DYPWM 1) 100% / 4096 The offset value corresponds to an output value with zero field at the sensor. Register size Offset range Offset quantization steps 1) OS DYOS ∆DYOS 15 -400 399 0.024 Infineon pre-calibrates the samples at zero field to 50% duty cycle (100 mT range), but does not guarantee the value. Therefore it is crucial to do a final calibration of each IC within the application Data Sheet 18 Rev 1.1, 2009-09 TLE4998P3C E1200 Signal Processing The offset value can be calculated by: --------------------------------DY OS = ( OS – 16384 ) × 100 4096 6.4 DSP Input Low Pass Filter A digital low-pass filter is placed between the Hall A/D converter and the DSP an can be to reduce the noise level. The low-pass filter has a constant DC amplification of 0 dB (gain of 1), which means that its setting has no influence on the internal Hall A/D converter value. The bandwidth can be set in 8 steps. Table 10 0 1 2 3 4 5 6 7 1) Low-Pass Filter Setting Cutoff frequency in Hz (at -3 dB point)1) 80 240 440 640 860 1100 1390 off Note: Parameter LP As this is a digital filter running with an RC-based oscillator, the cutoff frequency may vary within ±20% Table 11 Parameter Register size Low-Pass Filter Symbol Limit Values min. max. 3 - 20 + 20 bit % Unit Notes Corner frequency variation LP ∆f Note: In range 7 (filter off), the output noise increases. Data Sheet 19 Rev 1.1, 2009-09 TLE4998P3C E1200 Signal Processing Figure 7 shows the filter characteristics as a magnitude plot (highest setting is marked). The “off” position would be a flat 0 dB line. The update rate after the low-pass filter is 16 kHz. 0 -1 Magnitude (dB) -2 -3 -4 -5 -6 101 102 103 Frequency (Hz) Figure 7 DSP Input Filter (Magnitude Plot) Data Sheet 20 Rev 1.1, 2009-09 TLE4998P3C E1200 Signal Processing 6.5 Clamping The clamping function is useful for splitting the output voltage range into operating range and error ranges. If the magnetic field is outside the selected measurement range, the output value OUT is limited to the clamping values. Any value in the error range is interpreted as an error by the sensor counterpart. Table 12 Parameter Register size Clamping Symbol Limit Values min. max. bit % % % 1) 1) 2) 3) Unit Notes 2x7 CL,CH Clamping duty cy. low CYCLPWM 0 99.2 Clamping duty cy. high CYCHPWM 0.76 100 Clamping quantization ∆CYCxPWM 0.78 steps 1) 2) 3) For CL = 0 and CH = 127 the clamping function is disabled CYCLPWM< CYCHPWM mandatory Quantization starts for CL at 0% and for CH at 100% The clamping values are calculated by: Clamping duty cycle low (deactivated if CL=0): ----------------CY CLPWM = CL ⋅ 32 4095 Clamping duty cycle high (deactivated if CH=127): --------------------------------------CY CHPWM = ( CH + 1 ) ⋅ 32 – 1 4095 Data Sheet 21 Rev 1.1, 2009-09 TLE4998P3C E1200 Signal Processing Figure 8 shows an example in which the magnetic field range between Bmin and Bmax is mapped to duty cycles between 16% and 84%. DYPWM (%) 100 80 60 40 20 Error range DY CHPWM Operating range Error range 0 B min Figure 8 Clamping example DY CLPWM Bmax B (mT) Note: The clamping high value must be above the low value. Data Sheet 22 Rev 1.1, 2009-09 TLE4998P3C E1200 Signal Processing 6.6 PWM Output Fequency Setup This enables a setup of different PWM output frequencies, even if the internal RC oscillator varies by ±20%. Table 13 Parameter Register size Predivider Setting Symbol Limit Values min. max. 4 122 1953 bit Hz Predivider OSCClk ... oscillator clock Unit Notes Prediv PWM output frequency fPWM The nominal unit time is calculated by: fPW M = O SC Clk / (Prediv + 1) OSC Clk = 1953 Hz ±20% Data Sheet 23 Rev 1.1, 2009-09 TLE4998P3C E1200 Error Detection 7 Error Detection Different error cases can be detected by the On-Board-Diagnostics (OBD) and reported to the microcontroller. The OBD is useful only when the clamping function is enabled. 7.1 Voltages Outside the Operating Range The output signals error conditions if VDD crosses the overvoltage threshold level. Table 14 Parameter Overvoltage threshold Output duty cycle @ overvoltage 1) Overvoltage Symbol Limit Values min. typ. max. 18.35 V % Unit Notes VDDov 16.65 17.5 CYPWMov 100 1) - Output stays in “off” state (high ohmic) 7.2 EEPROM Error Correction The parity method is able to correct one single bit in one EEPROM line. One other singlebit error in another line can also be detected. As this situation is not correctable, this status is signalled at the output pin by clamping the output value to CYPWM = 100%. Table 15 Parameter Output duty cycle @ EEPROM error 1) EEPROM Error Signalling Symbol Limit Values min. max. % Unit Notes CYPWMerr 100 1) Output stays in “off” state (high ohmic) Data Sheet 24 Rev 1.1, 2009-09 TLE4998P3C E1200 Temperature Compensation 8 Temperature Compensation The magnetic field strength of a magnet depends on the temperature. This material constant is specific to different magnet types. Therefore, the TLE4998P3C E1200 offers a second-order temperature compensation polynomial, by which the Hall signal output is multiplied in the DSP. There are three parameters for the compensation: • Reference temperature T0 • A linear part (1st order) TC1 • A quadratic part (2nd order) TC2 The following formula describes the sensitivity dependent on the temperature in relation to the sensitivity at the reference temperature T0: S TC ( T ) = 1 + TC 1 × ( T – T 0 ) + TC 2 × ( T – T0 ) 2 For more information, see also the signal-processing flow in Figure 6. The full temperature compensation of the complete system is done in two steps: 1. Pre-calibration in the Infineon final test The parameters TC1, TC2, T0 are set to maximally flat temperature characteristics regarding the Hall probe and internal analog processing parts. 2. Overall system calibration The typical coefficients TC1, TC2, T0 of the magnetic circuitry are programmed. This can be done deterministically, as the algorithm of the DSP is fully reproducible. The final setting of the TC1, TC2, T0 values depend on the pre-calibrated values. Table 16 Parameter Register size TC1 1st order coefficient TC1 Quantization steps of TC1 Register size TC2 2nd order coefficient TC2 Quantization steps of TC2 Reference temp. Quantization steps of T0 1) Temperature Compensation Symbol Limit Values Unit min. max. 9 15.26 -4 - 48 1 8 4 0.119 64 bit ppm/ °C ppm/ °C bit ppm/ °C² ppm/ °C² °C °C 3) Notes Unsigned integer values 1) TL TC1 qTC1 TQ TC2 qTC2 T0 qT0 - -1000 2500 Unsigned integer values 2) Relative range to Infineon TC1 temperature pre-calibration, the maximum adjustable range is limited by the register-size and depends on specific pre-calibrated TL setting, full adjustable range: -2441 to +5355 ppm/°C Data Sheet 25 Rev 1.1, 2009-09 TLE4998P3C E1200 Temperature Compensation 2) Relative range to Infineon TC2 temperature pre-calibration, the maximum adjustable range is limited by the register-size and depends on specific pre-calibrated TQ setting, full adjustable range: -15 to +15 ppm/°C2 Handled by algorithm only (see Application Note) 3) 8.1 Parameter Calculation The parameters TC1 and TC2 may be calculated by: TL – 160 TC 1 = --------------------- × 1000000 65536 TQ – 128 TC 2 = ----------------------- × 1000000 8388608 The digital output for a given field BIN at a specific temperature can then be calculated by: B   IN DY OUT = 2 ⋅  ------------ × S TC × S TCHall × S0 × 4096 + DY OS  B FSR BFSR is the full range magnetic field. It is dependent on the range setting (e.g 100 mT). S0 is the nominal sensitivity of the Hall probe times the Gain factor set in the EEPROM. STC is the temperature-dependent sensitivity factor calculated by the DSP. STCHall is the temperature behavior of the Hall probe. The pre-calibration at Infineon is performed such that the following condition is met: S TC ( T J – T 0 ) × S TCHall ( T J ) ≈ 1 Within the application, an additional factor BIN(T) / BIN(T0) will be given due to the magnetic system. STC then needs to be modified to STCnew so that the following condition is satisfied: B IN ( T ) -------------------- × S TCnew ( T ) × S TCHall ( T ) ≈ S TC ( T ) × S TCHall ( T ) ≈ 1 B IN ( T 0 ) Therefore, the new sensitivity parameters STCnew can be calculated from the precalibrated setup STC using the relationship: B IN ( T ) -------------------- × S TCnew ( T ) ≈ S TC ( T ) B IN ( T 0 ) Data Sheet 26 Rev 1.1, 2009-09 TLE4998P3C E1200 Calibration 9 Calibration For the calibration of the sensor, a special hardware interface to a PC is required. All calibration and setting bits can be temporarily written into a Random Access Memory (RAM). This allows the EEPROM to remain untouched during the entire calibration process, since the number of the EEPROM programming cycles is limited. Therefore, this temporary setup (using the RAM only) does not stress the EEPROM. The digital signal processing is completely deterministic. This allows a two-point calibration in one step without iterations. After measuring the Hall output signal for the two end points, the signal processing parameters Gain and Offset can be calculated. Table 17 Parameter Temperature at calibration Two-point calibration accuracy Calibration Characteristics Symbol Limit Values min. max. 30 0.2 0.2 °C % % Position 1 Position 2 10 Unit Notes TCAL ∆CYCAL1 -0.2 ∆CYCAL2 -0.2 Note: Depending on the application and external instrumentation setup, the accuracy of the two-point calibration can be improved. Data Sheet 27 Rev 1.1, 2009-09 TLE4998P3C E1200 Calibration 9.1 Calibration Data Memory When the MEMLOCK bits are programmed (two redundant bits), the memory content is frozen and may no longer be changed. Furthermore, the programming interface is locked out and the chip remains in the application mode only. This prevents accidental programming due to environmental influences. Column Parity Bits R ow Parity Bits User-Calibration Bits Pre-Calibration Bits Figure 9 EEPROM Map A matrix parity architecture allows automatic correction of any single-bit error. Each row is protected by a row parity bit. The sum of bits set including this bit must be an odd number (ODD PARITY). Each column is additionally protected by a column parity bit. Each bit in the even positions (0, 2, etc.) of all lines must sum up to an even number (EVEN PARITY), and each bit in the odd positions (1,3, etc.) must have an odd sum (ODD PARITY). The parity column must have an even sum (EVEN PARITY). This mechanism of different parity calculations also protects against many block errors such as erasing a full line or even the whole EEPROM. When modifying the application bits (such as Gain, Offset, TC, etc.) the parity bits must be updated. As for the column bits, the pre-calibration area must be read out and considered for correct parity generation as well. Note: A specific programming algorithm must be followed to ensure data retention. A detailed separate programming specification is available on request. Data Sheet 28 Rev 1.1, 2009-09 TLE4998P3C E1200 Calibration Table 18 Parameter Number of EEPROM programming cycles Ambient temperature at programming Programming time Calibration memory Error Correction 1) 2) Programming Characteristics Symbol Limit Values min. max. 10 30 150 26 Cycles1) Programming allowed only at start of lifetime °C ms bit bit For complete memory 2) All active EEPROM bits All parity EEPROM bits Unit Notes NPRG TPRG tPRG - 10 100 1 cycle is the simultaneous change of ≥ 1 bit Depending on clock frequency at VDD, write pulse 10 ms ±1%, erase pulse 80 ms ±1% 9.2 Programming Interface The VDD pin and the OUT pin are used as a two-wire interface to transmit the EEPROM data to and from the sensor. This allows • Communication with high data reliability, parity protected • The bus-type connection of several sensors and separate programming via the OUT pin 9.3 Data transfer protocol The data transfer protocol is described in a separate document (User Programming Description), available on request. 9.4 Programming of sensors with common supply lines In many automotive applications, two sensors are used to measure the same parameter. This redundancy allows the operation to continue in an emergency mode. If both sensors use the same power supply lines, they can be programmed together in parallel. Data Sheet 29 Rev 1.1, 2009-09 TLE4998P3C E1200 Application Circuit 10 Application Circuit Figure 10 shows the connection of multiple sensors to a microcontroller. Sensor Module Voltage Supply Sensor Voltage Supply µC ECU Module VDD VDD µC Vdd 2k2 50 TLE out 4998P3C GND OUT1 CCin1 1n GND VGND CCin2 2k2 V DD TLE out 4998P3C GND OUT2 50 optional 1n Figure 10 Application Circuit Note: For calibration and programming, the interface has to be connected directly to the output pin The application circuit shown must be regarded as only an example that will need to be adapted to meet the requirements of other specific applications. Data Sheet 30 Rev 1.1, 2009-09 TLE4998P3C E1200 Package Outlines 11 Package Outlines B 1 x 45˚ ±1˚ 0.1 MAX. 5.34 ±0.05 5.16 ±0.08 1.9 MAX. 0.2 2A 3.38 ±0.06 1.905 B 1.905 B 3.71±0.08 1-0.1 0.25 ±0.05 7˚ 0.65 ±0.1 (0.25) 7.07±0.1 0.2 B 0.2 B (2.68) 5.67±0.1 0.4 ±0.05 1.67±0.05 1 MAX.1) 2x (2.2) A A 7˚ ±2˚ 5.34 ±0.05 5.16 ±0.08 0.9 ±0.05 0.2 B 0.2 B 3x 1.2 ±0.05 1.655 1 2 3 2 x 1.655 = 3.31 A-A (1.75) 15˚ ±2˚ (0.52) B-B 7˚ 45˚ ±1˚ (0.9) (1.75) (4.35) Capacitor (1.75) C-C Burr MAX 0.15 Burr MAX 0.15 B 0.2 5.16 ±0.08 Burr MAX 1.1 12.7 ±1 2C (14.8) (Useable Length) 23.8 ±0.5 38 MAX. Burr MAX 1.1 18 ±0.5 6 ±0.5 C 2.2 ±0.05 9 +0.75 -0.5 C 0.87±0.05 0.1 (8.17) 0.6 MAX. 1.9 MAX. 0.2 +0.04 0.35 ±0.05 7˚ A 6.35 ±0.4 12.7 ±0.3 Total tolerance at 10 pitches ±1 1) No solder function area 4 ±0.3 0.25 -0.15 0.39 ±0.1 P/PG-SSO-3-9x-PO V07 Figure 11 Data Sheet PG-SSO-3-92 (Plastic Green Single Small Outline Package) 31 Rev 1.1, 2009-09 1-1 Adhesive Tape Tape www.infineon.com Published by Infineon Technologies AG