28F016SV

E n n n n n n n 28F016SV 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile™ MEMORY Includes Commercial and Extended Temperature Specifications SmartVoltage Technology  User-Selectable 3.3V or 5V V CC  User-Selectable 5V or 12V V PP 65 ns Access Time 1 Million Erase Cycles per Block 30.8 MB/sec Burst Write Transfer Rate 0.48 MB/sec Sustainable Write Transfer Rate Configurable x8 or x16 Operation 56-Lead TSOP and SSOP Type I Packages n n Backwards-Compatible with 28F016SA, 28F008SA Command Set Revolutionary Architecture  Multiple Command Execution  Program during Erase  Command Super-Set of the Intel 28F008SA  Page Buffer Program 2 µA Typical Deep Power-Down 32 Independently Lockable Blocks State-of-the-Art 0.6 µm ETOX™ IV Flash Technology n n n Intel’s 28F016SV 16-Mbit FlashFile™ memory is a revolutionary architecture which is the ideal choice for designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative capabilities, low-power operation, user-selectable VPP voltage and high read/program performance, the 28F016SV enables the design of truly mobile, high-performance personal computing and communications products. The 28F016SV is the highest density, highest performance nonvolatile read/program solution for solid-state storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit and 28F016SA 16-Mbit FlashFile memories), extended cycling, flexible VCC and VPP voltage (SmartVoltage technology), fast program and read performance and selective block locking, provide a highly-flexible memory component suitable for Resident Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives. The 28F016SV’s dual read voltage enables the design of memory cards which can be read/written in 3.3V and 5V systems interchangeably. Its x8/x16 architecture allows optimization of the memory-to-processor interface. The flexible block locking option enables bundling of executable application software in a Resident Flash Array or memory card. The 28F016SV is manufactured on Intel’s 0.6 µm ETOX IV process technology. July 1997 Order Number: 290528-007 7/11/97 11:03 AM 29052807.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life saving, or life sustaining applications. Intel may make changes to specifications and product descriptions at any time, without notice. The 28F016SV may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are available on request. Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be obtained from: Intel Corporation P.O. Box 7641 Mt. Prospect, IL 60056-7641 or call 1-800-879-4683 or visit Intel’s Website at http:\\www.intel.com COPYRIGHT © INTEL CORPORATION, 1997 *Third-party brands and names are the property of their respective owners. CG-041493 E 28F016SV FlashFile™ MEMORY CONTENTS PAGE PAGE 5.0 ELECTRICAL SPECIFICATIONS..................25 5.1 Absolute Maximum Ratings ........................25 5.2 Capacitance ...............................................26 5.3 DC Characteristics (VCC = 3.3V ± 0.3V) .....29 5.4 DC Characteristics (VCC = 5V ± 0.5V) 5V ± 0.25V) ..................................................33 5.5 Timing Nomenclature .................................37 5.6 AC Characteristics—Read Only Operations38 5.7 Power-Up and Reset Timings.....................43 5.8 AC Characteristics for WE#—Controlled Command Write Operations .........................44 5.9 AC Characteristics for CE#—Controlled Command Write Operations ) ........................49 5.10 AC Characteristics for WE#—Controlled Page Buffer Program Operations..................54 5.11 AC Characteristics for CE#—Controlled Page Buffer Program Operations..................56 5.12 Erase and Word/Byte Program Performance.................................................58 6.0 MECHANICAL SPECIFICATIONS.................60 APPENDIX A: Device Nomenclature and Ordering Information .....................................61 APPENDIX B: Ordering Information .................63 1.0 INTRODUCTION .............................................7 1.1 Enhanced Features......................................7 1.2 Product Overview.........................................7 2.0 DEVICE PINOUT.............................................9 2.1 Lead Descriptions ......................................11 3.0 MEMORY MAPS ...........................................15 3.1 Extended Status Registers Memory Map ...16 4.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS ................17 4.1 Bus Operations for Word-Wide Mode (BYTE# = VIH) ..............................................17 4.2 Bus Operations for Byte-Wide Mode (BYTE# = VIL)...............................................17 4.3 28F008SA—Compatible Mode Command Bus Definitions .............................................18 4.4 28F016SV—Performance Enhancement Command Bus Definitions ............................19 4.5 Compatible Status Register........................21 4.6 Global Status Register ...............................22 4.7 Block Status Register.................................23 4.8 Device Configuration Code.........................24 3 28F016SV FlashFile™ MEMORY E REVISION HISTORY Description Number -001 -002 Original Version -003 Added 28F016SV-065/-070 at 5V VCC and 28F016SV-075 at 3.3V VCC. Improved burst write transfer rate to 30.8 MB/sec. Added 56-lead SSOP Type I packaging information. Changed VPPLK from 2V to 1.5V. Increased ICCR at 5V VCC and 3.3V VCC: ICCR1 from 30 mA (typ)/35 mA (max) to 40 mA (typ)/50 mA (max) @ V CC = 3.3V ICCR2 from 15 mA (typ)/20 mA (max) to 20 mA (typ)/30 mA (max) @ V CC = 3.3V ICCR1 from 50 mA (typ)/60 mA (max) to 75 mA (typ)/95 mA (max) @ V CC = 5V ICCR2 from 30 mA (typ)/35 mA (max) to 45 mA (typ)/55 mA (max) @ V CC = 5V Moved AC Characteristics for Extended Register Reads into separate table. Increased VPP MAX from 13V to 14V. Added Erase Suspend Command Latency times to Section 5.12 Modified Device Nomenclature Section to include SSOP package option and Ordering Information Changed definition of “NC.” Removed “No internal connection to die” from description. Added “xx” to Upper Byte of Command (Data) Definition in Sections 4.3 and 4.4. Added Note to Sleep Command (Section 4.4) denoting that the chip must be de-selected in order for the power consumption in sleep mode to reach deep power-down levels. Modified parameters “V” and “I” of Section 5.1 to apply to “NC” pins. Increased IPPR (VPP Read Current) for VPP> VCC to 200 µA at VCC = 3.3V and VCC = 5V Changed VCC = 5V DC Characteristics (Section 5.5) marked with Note 1 to indicate that these currents are specified for a CMOS rise/fall time (10% to 90%) of