2N3822

Databook.fxp 1/13/99 2:09 PM Page B-3 01/99 B-3 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor ¥ VHF Amplifiers ¥ Small Signal Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 50 V 10 mA 300 mW 2mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current V(BR)GSS IGSS 2N3821 Min – 50 – 0.1 – 0.1 – 0.5 –2 Max 2N3822 Min – 50 – 0.1 – 0.1 –1 –4 –6 2 10 Max Unit V nA µA V V V V mA nA µA Process NJ32 Test Conditions IG = – 1 µA, VDS = ØV VGS = – 30V, VDS = ØV VGS = – 30V, VDS = ØV VDS = 15V, ID = 50 µA VDS = 15V, ID = 200 µA VDS = 15V, ID = 400 µA VDS = 15V, ID = 0.5 nA VDS = 15V, VGS = ØV VDS = 15V, VGS = – 8V VDS = 15V, VGS = – 8V TA = 150°C TA = 150°C Gate Source Voltage Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Forward Transconductance Common Source Forward Transmittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage Noise Figure VGS VGS(OFF) IDSS ID(OFF) 0.5 –4 2.5 rds(on) gfs | Yfs | gos Ciss Crss eN ¯ NF 1500 4500 3000 6500 1500 10 6 2 200 5 3000 20 6 2 Ω µS µS µS pF pF VGS = ØV, ID = Ø V VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV RG = 1 MΩ f = 1 kHz f = 1 kHz f = 100 MHz f = 1 kHz f = 1 MHz f = 1 MHz f = 10 Hz f = 10 Hz 200 nV/√Hz 5 dB TOÐ72 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375