2N3958

厂商：
INTERFET
封装：
描述：
2N3958 - N-Channel Dual Silicon Junction Field-Effect Transistor - InterFET Corporation

数据手册：

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数据手册
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2N3958 数据手册

Databook.fxp 1/14/99 11:30 AM Page B-6 B-6 01/99 2N3957, 2N3958 N-Channel Dual Silicon Junction Field-Effect Transistor ¥ Low and Medium Frequency Differential Amplifiers ¥ High Input Impedance Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Total Device Power Dissipation (each side) @ 85°C Case Temperature (both sides) Power Derating (both sides) – 50 V 50 mA 250 mW 500 mW 4.3 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Voltage Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Drain Gate Capacitance Common Source Reverse Transfer Capacitance Noise Figure Differential Gate Current Saturation Drain Current Ratio Differential Gate Source Voltage Differential Gate Source Voltage with Temperature Transconductance Ratio gfs gos Ciss Cdgo Crss NF | IG1 – IG2 | IDSS1 / IDSS2 | VGS1 – VGS2 | ∆VGS1– VGS2 ∆T 2N3957 Min V(BR)GSS IGSS IG VGS VGS(OFF) VGS(F) IDSS 0.5 – 50 – 100 – 500 – 50 – 250 – 4.2 – 0.5 –1 –4 – 4.5 2 5 Max 2N3958 Min – 50 – 100 – 500 – 50 – 250 – 4.2 – 0.5 –1 0.5 –4 – 4.5 2 5 Max Unit V pA nA pA nA V V V V mA Process NJ16 Test Conditions IG = – 1 µA, VDS = ØV VGS = – 30V, VDS = ØV VGS = – 30V, VDS = ØV VDS = 20V, ID = 200 µA VDS = 20V, ID = 200 µA VDS = 20V, ID = 50 µA VDS = 20V, ID = 200 µA VDS = 20V, ID = 1 nA VDS = Ø, IG = 1 mA VDS = 20V, VGS = ØV TA = 125°C TA = 125°C 1000 3000 1000 3000 1000 35 4 1.5 1.2 0.5 10 0.9 1 20 6 7.5 0.9 1 0.85 0.85 1000 35 4 1.5 1.2 0.5 10 1 25 8 10 1 µS µS µS pF pF pF dB nA mV mV mV VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 10V, IS = ØA VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV RG = 10 MΩ VDS = 20V, ID = 200 µA VDS = 20V, VGS = ØV VDS = 20V, ID = 200 µA VDS = 20V, ID = 200 µA VDS = 20V, ID = 200 µA VDS = 20V, ID = 200 µA f = 1 kHz f = 200 MHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz f = 100 Hz TA = 125°C TA = 25°C to – 55°C TA = 25°C to 125°C gfs1 / gfs2 f = 1 kHz TOÐ71 Package See Section G for Outline Dimensions 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Pin Configuration 1 Source, 2 Drain, 3 Gate, 5 Source, 6 Drain, 7 Gate www.interfet.com

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2N3958

### 物料型号 - 型号：2N3957, 2N3958

### 器件简介 - 2N3957和2N3958是N-Channel Dual Silicon Junction Field-Effect Transistor，适用于低频和中频差分放大器以及高输入阻抗放大器。

### 引脚分配 - 引脚配置：1为源极（Source），2为漏极（Drain），3为栅极（Gate）；5为源极，6为漏极，7为栅极。

### 参数特性 - 绝对最大额定值： - 反向栅源电压、反向栅漏电压：-50V - 栅极电流：50mA - 总器件功率耗散（每侧）：250mW @ 85°C 外壳温度 - 功率降额（每侧）：500mW - 热阻（每侧）：4.3 mW/°C

- 静态电气特性： - 栅源击穿电压（V(BR)GSS）：-50V - 栅反向电流（IGSS）：100pA至100nA - 栅工作电流（IG）：50pA至250nA - 栅源电压（VGS）：-4.2V至-0.5V - 栅源截止电压（VGS(OFF)）：-1V至-4.5V - 栅源正向电压（VGS(F)）：2V - 漏饱和电流（脉冲）（IDSS）：0.5mA至5mA

- 动态电气特性： - 共源跨导（gfs）：1000µS至3000µS - 正向跨导（gfs）：1000µS - 共源输出电导（gos）：35µS - 共源输入电容（Ciss）：4pF - 漏栅电容（Cdgo）：1.5pF - 共源反向传输电容（Crss）：1.2pF - 噪声系数（NF）：0.5dB

### 功能详解 - 这些晶体管设计用于在差分放大器配置中工作，具有高输入阻抗和低噪声特性，适用于精确的信号放大。

### 应用信息 - 适用于需要高输入阻抗和低噪声放大的场合，如音频放大器、测量设备和通信系统。

### 封装信息 - 封装类型：TOÐ71，具体尺寸见文档G部分。

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