2N4220

Databook.fxp 1/13/99 2:09 PM Page B-10 B-10 01/99 2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A N-Channel Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ Mixers Oscillators VHF Amplifiers Small Signal Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 150 °C) – 30 V 10 mA 300 mW 2 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Voltage Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Forward Transmittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Noise Figure 2N4220A, 2N4221A, 2N4222A gfs | Yfs | gos Ciss Crss NF V(BR)GSS IGSS VGS VGS(OFF) IDSS 2N4220 2N4220A NJ16 Min – 30 – 0.1 – 0.1 – 0.5 (50) 0.5 Max 2N4221 2N4221A NJ16 Min – 30 – 0.1 – 0.1 Max 2N4222 2N4222A NJ32 Min – 30 – 0.1 – 0.1 Max Unit V nA µA V µA V mA Process Test Conditions IG = – 1µA, VDS = ØV VGS = – 15V, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, ID = ( ) VDS = 15V, ID = 0.1 nA VDS = 15V, VGS = ØV TA = 150°C – 2.5 – 1 –5 –2 –6 (50) (200) (200) (500) (500) –4 3 2 –6 6 5 –8 15 1000 750 4000 2000 750 5000 2500 750 6000 µS µS VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV RG = 1 MΩ f = 1 kHz f = 100 MHz f = 1 kHz f = 1 MHz f = 1 MHz f = 100 MHz 10 6 2 2.5 20 6 2 2.5 40 6 2 2.5 µS pF pF dB TOÐ72 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Drain, 3 Gate, 4 Case 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com