2N4416

厂商：
INTERFET
封装：
描述：
2N4416 - N-Channel Silicon Junction Field-Effect Transistor - InterFET Corporation

数据手册：

下载2N4416.pdf

立即购买

详情介绍
数据手册
价格&库存

2N4416 数据手册

Databook.fxp 1/14/99 11:30 AM Page B-14 B-14 01/99 2N4416, 2N4416A N-Channel Silicon Junction Field-Effect Transistor ¥ Mixers ¥ VHF Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Dissipation Power Derating 2N4416 – 30 V 10 mA 300 mW 2 mW°C 2N4416A – 35 V 10 mA 300 mW 2 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Output Capacitance Common Source Reverse Transfer Capacitance Common Source Input Conductance Common Source Input Susceptance Common Source Output Susceptance Common Source Power Gain Noise Figure gfs V(BR)GSS IGSS VGS(OFF) IDSS 2N4416 Min – 30 – 0.1 – 0.1 –6 5 15 Max 2N4416A Min – 35 – 0.1 – 0.1 – 2.5 5 –6 15 Max Unit V nA µA V mA Process NJ26 Test Conditions IG = – 1µA, VDS = ØV VGS = – 20V, VDS = ØV VGS = – 20V, VDS = ØV VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV TA = 150°C 4500 7500 4500 7500 4000 50 75 100 4 2 0.8 100 1000 2500 10000 1000 4000 18 10 2 4 18 10 2 4 4000 50 75 100 4 2 0.8 100 1000 2500 1000 4000 µS µS µS µS µS pF pF pF µS µS µS µS µS dB dB dB dB VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 5mA VDS = 15V, ID = 5mA VDS = 15V, ID = 5mA RG = 1kΩ f = 1 kHz f = 400 MHz f = 1 kHz f = 100 MHz f = 400 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz gos Ciss Coss Crss gis bis bos Gps NF 10000 µS TOÐ72 Package See Section G for Outline Dimensions Surface Mount SMP4416, SMP4416A Pin Configuration 1 Source, 2 Drain, 3 Gate, 4 Case Note: rf parameters guaranteed, but not 100% tested. 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com

下载 PDF

2N4416

物料型号： - 2N4416和2N4416A是N-Channel Silicon Junction Field-Effect Transistor（N沟道硅结型场效应晶体管）的型号。

器件简介： - 2N4416和2N4416A主要应用于混频器和VHF放大器。

引脚分配： - 引脚配置为1（源极），2（漏极），3（栅极），4（壳体）。

参数特性： - 绝对最大额定值包括反向栅源电压和反向栅漏电压，2N4416为-30V，2N4416A为-35V，栅极电流为10mA，连续器件功耗为300mW，功率降额为2mW/°C。 - 静态电气特性包括栅源击穿电压、栅源反向电流、栅源截止电压和漏饱和电流（脉冲）。 - 动态电气特性包括共源极跨导、共源极输出电导、共源极输入电容、共源极输出电容、共源极反向转移电容、共源极输入电导、共源极输入易感性、共源极输出易感性、共源极功率增益和噪声系数。

功能详解： - 该文档提供了详细的电气特性参数，包括静态和动态电气特性，这些参数对于理解器件的工作特性和应用范围至关重要。

应用信息： - 2N4416和2N4416A适用于混频器和VHF放大器等应用。

封装信息： - 提到了TO-72封装和表面贴装SMP4416、SMP4416A封装。

2N4416 价格&库存

-> 查询更多价格&库存

很抱歉，暂时无法提供与“2N4416”相匹配的价格&库存，您可以联系我们找货

免费人工找货

搜索历史

2N4416

相关技术文章