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2N4857

2N4857

  • 厂商:

    INTERFET

  • 封装:

  • 描述:

    2N4857 - N-Channel Silicon Junction Field-Effect Transistor - InterFET Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
2N4857 数据手册
Databook.fxp 1/14/99 11:30 AM Page B-15 01/99 B-15 2N4856, 2N4857, 2N4858, 2N4859, 2N4860, 2N4861 N-Channel Silicon Junction Field-Effect Transistor ¥ Choppers ¥ Commutators ¥ Analog Switches Absolute maximum ratings at TA = 25¡C Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Device Dissipation Power Derating Continuous Forward Gate Current 2N4856, 2N4857, 2N4858 – 40 V – 40 V 1.8 W 10 mW/°C 50 mA 2N4859, 2N4860, 2N4861 – 30 V – 30 V 1.8 W 10 mW/°C 50 mA At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage 2N4856, 2N4857, 2N4858 2N4859, 2N4860, 2N4861 Gate Reverse Current 2N4856, 2N4857, 2N4858 Gate Reverse Current 2N4859, 2N4860, 2N4861 Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Drain Source ON Voltage Dynamic Electrical Characteristics Common Source ON Resistance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Switching Characteristics Turn ON Delay Time td(on) rds(on) Ciss Crss V(BR)GSS 2N4856 2N4859 Min Max – 40 – 30 IGSS IGSS VGS(OFF) IDSS ID(OFF) VDS(ON) –4 50 250 500 0.75 (20) – 250 – 500 – 250 – 500 – 10 2N4857 2N4860 Min Max – 40 – 30 – 250 – 500 – 250 – 500 –2 20 –6 100 250 500 0.5 (10) 2N4858 2N4861 Min Max – 40 – 30 – 250 – 500 – 250 – 500 – 0.8 8 –4 80 250 500 0.5 (5) Unit V V pA nA pA nA V mA pA nA V (mA) Process NJ132 Test Conditions IG = – 1 µA, VDS = ØV IG = – 1 µA, VDS = ØV VGS = – 20V, VDS = ØV VGS = – 20V, VDS = ØV VGS = – 15V, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, ID = 0.5 nA VDS = 15V, VGS = ØV VDS = 15V, VGS = – 10V VDS = 15V, VGS = – 10V VGS = ØV, ID = ( ) TA = 150°C TA = 150°C TA = 150°C 25 18 8 40 18 8 60 18 8 Ω pF pF VGS = ØV, ID = Ø A VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V f = 1 kHz f = 1 MHz f = 1 MHz 6 (20) [–10] 3 (20) [–10] 25 (20) [–10] 6 (10) [– 6] 4 (10) [– 6] 50 (10) [– 6] 10 (5) [– 4] 10 (5) [– 4] 100 (5) [– 4] ns (mA) [V] ns (mA) [V] ns (mA) [V] VDD = 10V, VGS = ØV ID(ON) = ( ) VGS(OFF) = [ ] Rise Time tr Turn OFF Delay Time td(off) (2N4856, 2N4859) RL = 465 Ω (2N4857, 2N4860) RL = 953 Ω (2N4858, 2N4861) RL = 1910 Ω TOÐ18 Package See Section G for Outline Dimensions Surface Mount SMP4856, SMP4857, SMP4858, SMP4859, SMP4860, SMP4861 Pin Configuration 1 Source, 2 Drain, 3 Gate &Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
2N4857
1. 物料型号: - 2N4856, 2N4857, 2N4858 - 2N4859, 2N4860, 2N4861

2. 器件简介: - 这些是N沟道硅结型场效应晶体管,适用于开关、斩波器、换向器、模拟开关等应用。

3. 引脚分配: - 1号引脚:源极(Source) - 2号引脚:漏极(Drain) - 3号引脚:栅极和外壳(Gate & Case)

4. 参数特性: - 绝对最大额定值(在Ta=25°C时): - 反向栅源电压:2N4856, 2N4857, 2N4858为-40V,2N4859, 2N4860, 2N4861为-30V。 - 反向栅漏电压:两者均为-40V和-30V。 - 连续器件耗散:两者均为1.8W。 - 功率降额:两者均为10mW/°C。 - 连续正向栅源电流:两者均为50mA。

5. 功能详解: - 包括静态电气特性和动态电气特性的数据,例如: - 栅源击穿电压(V(BR)GSS) - 栅反向电流(IGsS) - 栅源截止电压(VGS(OFF)) - 漏饱和电流(IDSS) - 漏截止电流(ID(OFF)) - 漏源导通电压(VDS(ON)) - 共源极导通电阻(rds(on)) - 共源输入电容(Ciss) - 共源反向传输电容(Crss) - 开关特性,例如: - 导通延迟时间(td(on)) - 上升时间(tr) - 关闭延迟时间(td(off))

6. 应用信息: - 适用于斩波器、换向器、模拟开关等应用。

7. 封装信息: - TOÐ18封装:包括引脚配置。 - 表面贴装:SMP4856, SMP4857, SMP4858, SMP4859, SMP4860, SMP4861。
2N4857 价格&库存

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