2N4861

厂商：
INTERFET
封装：
描述：
2N4861 - N-Channel Silicon Junction Field-Effect Transistor - InterFET Corporation

数据手册：

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2N4861 数据手册

Databook.fxp 1/14/99 11:30 AM Page B-15 01/99 B-15 2N4856, 2N4857, 2N4858, 2N4859, 2N4860, 2N4861 N-Channel Silicon Junction Field-Effect Transistor ¥ Choppers ¥ Commutators ¥ Analog Switches Absolute maximum ratings at TA = 25¡C Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Device Dissipation Power Derating Continuous Forward Gate Current 2N4856, 2N4857, 2N4858 – 40 V – 40 V 1.8 W 10 mW/°C 50 mA 2N4859, 2N4860, 2N4861 – 30 V – 30 V 1.8 W 10 mW/°C 50 mA At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage 2N4856, 2N4857, 2N4858 2N4859, 2N4860, 2N4861 Gate Reverse Current 2N4856, 2N4857, 2N4858 Gate Reverse Current 2N4859, 2N4860, 2N4861 Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Drain Source ON Voltage Dynamic Electrical Characteristics Common Source ON Resistance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Switching Characteristics Turn ON Delay Time td(on) rds(on) Ciss Crss V(BR)GSS 2N4856 2N4859 Min Max – 40 – 30 IGSS IGSS VGS(OFF) IDSS ID(OFF) VDS(ON) –4 50 250 500 0.75 (20) – 250 – 500 – 250 – 500 – 10 2N4857 2N4860 Min Max – 40 – 30 – 250 – 500 – 250 – 500 –2 20 –6 100 250 500 0.5 (10) 2N4858 2N4861 Min Max – 40 – 30 – 250 – 500 – 250 – 500 – 0.8 8 –4 80 250 500 0.5 (5) Unit V V pA nA pA nA V mA pA nA V (mA) Process NJ132 Test Conditions IG = – 1 µA, VDS = ØV IG = – 1 µA, VDS = ØV VGS = – 20V, VDS = ØV VGS = – 20V, VDS = ØV VGS = – 15V, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, ID = 0.5 nA VDS = 15V, VGS = ØV VDS = 15V, VGS = – 10V VDS = 15V, VGS = – 10V VGS = ØV, ID = ( ) TA = 150°C TA = 150°C TA = 150°C 25 18 8 40 18 8 60 18 8 Ω pF pF VGS = ØV, ID = Ø A VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V f = 1 kHz f = 1 MHz f = 1 MHz 6 (20) [–10] 3 (20) [–10] 25 (20) [–10] 6 (10) [– 6] 4 (10) [– 6] 50 (10) [– 6] 10 (5) [– 4] 10 (5) [– 4] 100 (5) [– 4] ns (mA) [V] ns (mA) [V] ns (mA) [V] VDD = 10V, VGS = ØV ID(ON) = ( ) VGS(OFF) = [ ] Rise Time tr Turn OFF Delay Time td(off) (2N4856, 2N4859) RL = 465 Ω (2N4857, 2N4860) RL = 953 Ω (2N4858, 2N4861) RL = 1910 Ω TOÐ18 Package See Section G for Outline Dimensions Surface Mount SMP4856, SMP4857, SMP4858, SMP4859, SMP4860, SMP4861 Pin Configuration 1 Source, 2 Drain, 3 Gate &Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375

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2N4861

1. 物料型号： - 2N4856, 2N4857, 2N4858, 2N4859, 2N4860, 2N4861：这些是N-Channel Silicon Junction Field-Effect Transistor（N沟道硅结型场效应晶体管）的型号。

2. 器件简介： - 这些器件适用于作为开关、斩波器和换向器使用。

3. 引脚分配： - 引脚配置为：1号引脚为源极（Source），2号引脚为漏极（Drain），3号引脚为栅极和外壳（Gate & Case）。

4. 参数特性： - 绝对最大额定值在环境温度25°C时包括反向栅源电压、反向栅漏电压、连续器件耗散功率、功率降额、连续正向栅源电流等。 - 静态电气特性包括栅源击穿电压、栅反向电流、栅源截止电压、漏饱和电流（脉冲）、漏截止电流等。 - 动态电气特性包括共源导通电阻、共源输入电容、共源反向传输电容等。 - 开关特性包括开通延迟时间、上升时间、关断延迟时间等。

5. 功能详解： - 这些晶体管在不同条件下的电气特性，如在特定电压和温度下的电流和电压参数。

6. 应用信息： - 适用于模拟开关、开关电源、电机控制等应用。

7. 封装信息： - 提供了TO-18封装和表面贴装（SMP）封装的型号，包括SMP4856、SMP4857、SMP4858、SMP4859、SMP4860、SMP4861。

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