2N6450

Databook.fxp 1/13/99 2:09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor ¥ High Voltage Absolute maximum ratings at TA = 25¡C Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 2N6449 2N6450 – 300 V – 200 V – 300 V – 200 V 10 mA 10 mA 800 mW 800 mW 6.4 mW/°C 6.4 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS 2N6449 Min – 300 – 100 Max 2N6450 Min – 200 – 100 Max Unit V nA nA µA – 100 µA V mA –2 2 – 15 10 Process NJ42 Test Conditions IG = – 10 µA, VDS = ØV VGS = – 150V, VDS = ØV VGS = – 100V, VDS = ØV VGS = – 150V, VDS = ØV VGS = – 100V, VDS = ØV VDS = 30V, ID = 4 nA VDS = 30V, VGS = ØV TA = 150°C TA = 150°C Gate Reverse Current IGSS – 100 –2 2 – 15 10 Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transfer Admittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance VGS(OFF) IDSS Yfs Yos Ciss Crss 0.5 3 100 20 2.5 0.5 3 100 20 2.5 mS µS pF pF VDS = 30V, VGS = ØV VDS = 30V, VGS = ØV VDS = 30V, VGS = ØV VDS = 30V, VGS = ØV f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz TOÐ39 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Drain, 3 Gate & Case 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com