2N6452

Databook.fxp 1/13/99 2:09 PM Page B-25 01/99 B-25 2N6451, 2N6452 N-Channel Silicon Junction Field-Effect Transistor ¥ Audio Amplifiers ¥ Low-Noise, High Gain Amplifiers ¥ Low-Noise Preamplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 2N6451 2N6452 – 20 V – 25 V – 20 V – 25 V 10 mA 10 mA 360 mW 360 mW 2.88 mW/°C 2.88 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS 2N6451 Min – 20 – 0.1 Max 2N6452 Min – 25 – 0.5 Max Unit V nA nA µA –1 µA V mA Process NJ132L Test Conditions IG = – 1 µA, VDS = ØV VGS = – 10V, VDS = ØV VGS = – 15V, VDS = ØV VGS = – 10V, VDS = ØV VGS = – 15V, VDS = ØV VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = ØV TA = 125°C TA = 125°C Gate Reverse Current IGSS – 0.2 – 0.5 – 3.5 – 0.5 – 3.5 5 20 5 20 Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transmittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage Noise Figure VGS(OFF) IDSS | Yfs | | Yos | Ciss Crss eN ¯ NF 15 30 50 25 5 5 3 1.5 15 30 50 25 5 mS mS µS µS pF pF pF pF VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 5 mA RG = 10 kΩ f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 10 kHz f = 1 kHz f = 10 Hz 10 nV/√Hz 8 2.5 nV/√Hz dB TOÐ72 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375