NJ01

Databook.fxp 1/13/99 2:09 PM Page F-2 F-2 01/99 NJ01 Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ01 Process. Datasheet 2N4117, 2N4117A 2N4118, 2N4118A 2N4119, 2N4119A IFN421, IFN422 IFN423, IFN424 IFN425, IFN426 Datasheet DPAD1, DPAD2 DPAD5, DPAD10 PAD1, PAD2 PAD5 VCR7N At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance NJ01 Process Min V(BR)GSS IGSS VGS(OFF) IDSS – 0.5 0.03 – 40 Typ – 50 – 0.5 – 10 –6 0.6 Max Unit V pA V mA Test Conditions IG = – 1 µA, VDS = ØV VGS = – 20V, VDS = ØV VDS = 10V, ID = 1 µA VDS = 10V, VGS = ØV gfs Ciss 175 2 0.9 µS pF pF VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz Common Source Input Capacitance Common Source Reverse Transfer Capacitance Crss 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-3 01/99 F-3 NJ01 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.1 V Gfs as a Function of VGS(OFF) 250 250 VGS = Ø V Drain Current in µA 200 VGS = – 0.5 V 150 VGS = –1.0 V 100 VGS = –1.5 V 50 VGS = –2.0 V 0 5 10 15 20 Transconductance in µS 200 150 100 50 0 –1 –2 –3 –4 –5 –6 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in µA 800 Leakage Current in pA 10k 1k 100 10 1.0 0.1 0 –1 –2 –3 –4 –5 –6 0 Leakage Current as a Function of Temperature 600 400 200 25 50 75 100 125 150 Gate Source Cutoff Voltage in Volts Ambient Temperature °C Input Capacitance as a Function of VGS 4 Feedback Capacitance in pF Input Capacitance in pF VDS = Ø V 3 VDS = 10 V 2 2.0 Feedback Capacitance as a Function of VGS VDS = Ø V 1.5 VDS = 10 V 1.0 1 0.5 0.1 1 Gate Source Voltage in Volts 10 20 0.1 1 Gate Source Voltage in Volts 10 20