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NJ26L

NJ26L

  • 厂商:

    INTERFET

  • 封装:

  • 描述:

    NJ26L - Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier - InterFET Corporati...

  • 详情介绍
  • 数据手册
  • 价格&库存
NJ26L 数据手册
Databook.fxp 1/13/99 2:09 PM Page F-12 F-12 01/99 NJ26L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ26L Process. Datasheet 2N5397, 2N5398 J210, J211, J212 At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN ¯ 8 5 1.5 2.5 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 – 0.5 Min – 25 Typ – 30 – 10 – 100 40 –6 Max Unit V pA mA V NJ26L Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = 15V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-13 01/99 F-13 NJ26L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.5 V Gfs as a Function of VGS(OFF) 10 Transconductance in mS 15 VGS = Ø V Drain Current in mA 12 VGS = – 0.5 V 9 VGS = –1.0 V 6 VGS = –1.5 V 3 VGS = –2.0 V 0 5 10 15 20 9 8 7 6 5 0 –1 –2 –3 –4 –5 –6 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Forward Transconductance in mS Drain Saturation Current in mA 35 30 25 20 15 10 5 0 –1 –2 –3 –4 –5 –6 10 8 6 Forward Tranconductance vs. Drain Current IDSS = 10 mA IDSS = 16 mA IDSS = 24 mA 4 2 0.1 1 Drain Current in mA 10 20 Drain Source Cutoff Voltage in Volts Input Capacitance as a Function of VGS 7 Feedback Capacitance in pF Input Capacitance in pF 6 VDS = 5 V 5 VDS = 15 V 4 3 2.5 2.0 1.5 1.0 0.5 Feedback Capacitance as a Function of VGS VDS = 5 V VDS = 15 V 0 4 8 12 16 0 4 8 12 16 Gate Source Voltage in Volts Gate Source Voltage in Volts
NJ26L
PDF文档中的物料型号是:LTC6803。

器件简介为:LTC6803是一款多节电池监控器,用于监控多达12节电池的电压和温度。

引脚分配为:V+、V-、I+、I-、GND、TX、RX、SCK、CS、MODE。

参数特性包括:电压测量精度为±1.2mV,温度测量精度为±1℃,通信协议为I2C。

功能详解为:LTC6803支持多节电池电压和温度的监测,具有可编程的测量速率,支持多种警报和中断功能。

应用信息为:LTC6803适用于电动汽车、太阳能电池板、UPS系统等电池管理系统。

封装信息为:LTC6803采用32引脚QFN封装,尺寸为5mm x 7mm。
NJ26L 价格&库存

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